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Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Subcategory Qualification Status Max Power Dissipation Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
IPI70N04S307AKSA1 IPI70N04S307AKSA1 Infineon Technologies $0.00
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download Through Hole Tube 2007 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 40V 79W Tc 80A 0.0071Ohm SILICON N-Channel 6.5m Ω @ 70A, 10V 4V @ 50μA 2700pF @ 25V 40nC @ 10V 70A 80A Tc 145 mJ 10V ±20V
IPB50R299CPATMA1 IPB50R299CPATMA1 Infineon Technologies $0.00
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download 8 Weeks Surface Mount Tape & Reel (TR) 2008 CoolMOS™ no Obsolete 1 (Unlimited) 2 RoHS Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 104W 35 ns 500V 104W Tc 12A SWITCHING 0.299Ohm 80 ns SILICON N-Channel 299m Ω @ 6.6A, 10V 3.5V @ 440μA 1190pF @ 100V 31nC @ 10V 14ns 12 ns 20V 12A Tc 550V 26A 289 mJ 10V ±20V
IRFR13N20DTR IRFR13N20DTR Infineon Technologies $0.00
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download Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.235Ohm 200V SILICON N-Channel 235m Ω @ 8A, 10V 5.5V @ 250μA 830pF @ 25V 38nC @ 10V 13A 13A Tc 200V 52A 130 mJ 10V ±30V
IPI100N08S207AKSA1 IPI100N08S207AKSA1 Infineon Technologies $0.00
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download 14 Weeks Through Hole Tube 2006 OptiMOS™ Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead TO-262-3 Long Leads, I2Pak, TO-262AA not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE TO-262AB Halogen Free 300W 26 ns 75V 300W Tc 100A 61 ns SILICON N-Channel 7.1m Ω @ 80A, 10V 4V @ 250μA 4700pF @ 25V 200nC @ 10V 51ns 30 ns 20V 100A Tc 400A 10V ±20V
IRFR9120NTRL IRFR9120NTRL Infineon Technologies $0.00
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download Tape & Reel (TR) 1998 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 40W Tc SWITCHING 0.48Ohm 100V SILICON P-Channel 480m Ω @ 3.9A, 10V 4V @ 250μA 350pF @ 25V 27nC @ 10V 6.6A 6.6A Tc 100V 26A 100 mJ 10V ±20V
IRFR220NTRL IRFR220NTRL Infineon Technologies $0.00
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download Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 43W Tc SWITCHING 0.6Ohm 200V SILICON N-Channel 600m Ω @ 2.9A, 10V 4V @ 250μA 300pF @ 25V 23nC @ 10V 5A 5A Tc 200V 20A 46 mJ 10V ±20V
IRLMS2002TR IRLMS2002TR Infineon Technologies $0.00
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Cut Tape (CT) 2003 HEXFET® Obsolete 1 (Unlimited) 6 EAR99 Non-RoHS Compliant ULTRA-LOW RESISTANCE SOT-23-6 Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G6 Not Qualified 1 SINGLE WITH BUILT-IN DIODE SWITCHING 0.03Ohm 20V SILICON N-Channel 30m Ω @ 6.5A, 4.5V 1.2V @ 250μA 1310pF @ 15V 22nC @ 5V 6.5A 6.5A Ta 20V 20A
IRFR13N15DTR IRFR13N15DTR Infineon Technologies $0.00
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download Surface Mount Tape & Reel (TR) 2000 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant Contains Lead 14A TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 86W Tc 14A SWITCHING 0.18Ohm SILICON N-Channel 180m Ω @ 8.3A, 10V 5.5V @ 250μA 620pF @ 25V 29nC @ 10V 26ns 14A Tc 56A 130 mJ 10V ±30V
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Tape & Reel (TR) 2008 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant HIGH RELIABILITY 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G8 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING SILICON P-Channel 41m Ω @ 6.2A, 10V 3V @ 250μA 3220pF @ 25V 80nC @ 10V 6.2A 6.2A Ta 40V 4.5V 10V ±20V
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download Surface Mount Tape & Reel (TR) 2006 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 4.826mm RoHS Compliant Lead Free 15A No 5 DirectFET™ Isometric SQ 506μm 3.95mm Surface Mount -40°C~150°C TJ 25V MOSFET (Metal Oxide) ENHANCEMENT MODE BOTTOM R-XBCC-N3 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 34W 9.4 ns 2.2W Ta 34W Tc 12A SWITCHING 0.0063Ohm 13 ns SILICON N-Channel 6.3m Ω @ 15A, 10V 2.35V @ 25μA 1450pF @ 13V 17nC @ 4.5V 16ns 4.6 ns 20V 25V 15A Ta 59A Tc 120A 13 mJ 4.5V 10V ±20V
IRFH5302TR2PBF IRFH5302TR2PBF Infineon Technologies $0.00
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download Surface Mount Cut Tape (CT) 2009 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5mm RoHS Compliant Lead Free No 8 8-PowerVDFN No SVHC 810μm 6mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 3.6W 1 Single 100W 18 ns 1.8V 2.1mOhm PQFN (5x6) Single Die 29 ns 100A 22 ns N-Channel 2.1mOhm @ 50A, 10V 2.35V @ 100μA 4400pF @ 15V 76nC @ 10V 51ns 18 ns 20V 30V 1.8 V 32A Ta 100A Tc 30V 4.4nF 2.1 mΩ
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download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 89W Tc SWITCHING 0.004Ohm 20V SILICON N-Channel 4m Ω @ 15A, 10V 2.45V @ 250μA 2830pF @ 10V 31nC @ 4.5V 30A 120A Tc 20V 460A 460 mJ 4.5V 10V ±20V
BSZ076N06NS3GATMA1 BSZ076N06NS3GATMA1 Infineon Technologies $0.00
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download Surface Mount Tape & Reel (TR) 2009 OptiMOS™ no Obsolete 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerVDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 2.1W 15 ns 60V 2.1W Ta 69W Tc 20A SWITCHING 0.0076Ohm 20 ns SILICON N-Channel 7.6m Ω @ 20A, 10V 4V @ 35μA 4000pF @ 30V 50nC @ 10V 40ns 5 ns 20V 20A Tc 10V ±20V
SPD02N80C3BTMA1 SPD02N80C3BTMA1 Infineon Technologies $0.00
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download Surface Mount Tape & Reel (TR) 2013 CoolMOS™ yes Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free No AVALANCHE RATED, HIGH VOLTAGE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 4 R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 42W 25 ns 800V 42W Tc 2A SWITCHING 65 ns SILICON N-Channel 2.7 Ω @ 1.2A, 10V 3.9V @ 120μA 290pF @ 100V 16nC @ 10V 15ns 18 ns 20V 2A 2A Tc 6A 90 mJ 10V ±20V
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download Through Hole Tube 2010 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm RoHS Compliant Lead Free 83A 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.826mm Through Hole -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power Not Qualified 1 DRAIN Single 330W 18 ns 5V 350W Tc 83A SWITCHING 25 ns SILICON N-Channel 15m Ω @ 33A, 10V 5V @ 250μA 4460pF @ 25V 110nC @ 10V 60ns 35 ns 30V 150V 75A 85A Tc 10V ±30V
SPD04N60S5 SPD04N60S5 Infineon Technologies $0.00
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download Tape & Reel (TR) 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 2 RoHS Compliant Lead Free Tin 4.5A No 3 AVALANCHE RATED, HIGH VOLTAGE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ 600V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 3 YES R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 50W 55 ns 50W Tc 4.5A SWITCHING 0.95Ohm 60 ns SILICON N-Channel 950m Ω @ 2.8A, 10V 5.5V @ 200μA 580pF @ 25V 22.9nC @ 10V 30ns 15 ns 20V 600V 4.5A Tc 9A 10V ±20V
BSP318SL6327HTSA1 BSP318SL6327HTSA1 Infineon Technologies $0.00
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download Surface Mount Tape & Reel (TR) 1999 SIPMOS® Obsolete 1 (Unlimited) 4 RoHS Compliant No 4 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 SINGLE WITH BUILT-IN DIODE DRAIN 1.8W 12 ns 1.8W Ta 2.6A 60V 20 ns SILICON N-Channel 90m Ω @ 2.6A, 10V 2V @ 20μA 380pF @ 25V 20nC @ 10V 15ns 15 ns 20V 2.6A Ta 60V 60 mJ 4.5V 10V ±20V
IRFS3006PBF IRFS3006PBF Infineon Technologies $0.00
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download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 375W 16 ns 4V 375W Tc 270A SWITCHING 0.0025Ohm 118 ns SILICON N-Channel 2.5m Ω @ 170A, 10V 4V @ 250μA 8970pF @ 50V 300nC @ 10V 182ns 189 ns 20V 60V 195A Tc 10V ±20V
IRFH7921TRPBF IRFH7921TRPBF Infineon Technologies $0.00
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download Surface Mount Tape & Reel (TR) 2008 HEXFET® Obsolete 1 (Unlimited) SMD/SMT EAR99 5.2324mm ROHS3 Compliant Lead Free No 8 8-PowerVDFN No SVHC 1.1684mm 6.2484mm 8.5MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 Single 3.1W 12 ns 3.1W Ta 15mA 14 ns N-Channel 8.5m Ω @ 15A, 10V 2.35V @ 25μA 1210pF @ 15V 14nC @ 4.5V 7.6ns 4.7 ns 20V 30V 30V 1.8 V 34A 15A Ta 34A Tc 4.5V 10V ±20V
IRFS4010-7PPBF IRFS4010-7PPBF Infineon Technologies $0.00
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download Surface Mount Tube 2005 HEXFET® Discontinued 1 (Unlimited) 6 SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.55mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 DRAIN Single 380W 19 ns 4V 60 ns 380W Tc 190A SWITCHING 0.004Ohm 100 ns SILICON N-Channel 4m Ω @ 110A, 10V 4V @ 250μA 9830pF @ 50V 230nC @ 10V 56ns 48 ns 20V 100V 100V 4 V 190A Tc 330 mJ 10V ±20V
IRFR9024NTRRPBF IRFR9024NTRRPBF Infineon Technologies $0.00
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download Surface Mount Tape & Reel (TR) 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 2.3876mm 6.22mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 Other Transistors 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 38W 13 ns 38W Tc -11A SWITCHING 23 ns SILICON P-Channel 175m Ω @ 6.6A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 55ns 37 ns 20V -55V 11A Tc 55V 44A 62 mJ 10V ±20V
IRFR2905ZTRLPBF IRFR2905ZTRLPBF Infineon Technologies $0.00
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download Tape & Reel (TR) 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.0145Ohm 55V SILICON N-Channel 14.5m Ω @ 36A, 10V 4V @ 250μA 1380pF @ 25V 44nC @ 10V 42A 42A Tc 55V 240A 82 mJ 10V ±20V
IRFU1018EPBF IRFU1018EPBF Infineon Technologies $0.00
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download Through Hole Tube 2009 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm 8.4MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 110W 13 ns 4V 110W Tc 39 ns 56A SWITCHING 55 ns SILICON N-Channel 8.4m Ω @ 47A, 10V 4V @ 100μA 2290pF @ 50V 69nC @ 10V 35ns 46 ns 20V 60V 79A 56A Tc 88 mJ 10V ±20V
IRFP4410ZPBF IRFP4410ZPBF Infineon Technologies $0.00
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download 10 Weeks Through Hole Bulk 2004 HEXFET® Obsolete 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.3086mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 230W 16 ns 4V 230W Tc 57 ns 97A SWITCHING 0.009Ohm 43 ns SILICON N-Channel 9m Ω @ 58A, 10V 4V @ 150μA 4820pF @ 50V 120nC @ 10V 52ns 57 ns 20V 100V 100V 4 V 97A Tc 242 mJ 10V ±20V
IRFS4229PBF IRFS4229PBF Infineon Technologies $0.00
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download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.572mm 9.65mm Surface Mount -40°C~175°C TJ MOSFET (Metal Oxide) 1 Single 330W 18 ns 5V 330W Tc 290 ns 45A 30 ns N-Channel 48m Ω @ 26A, 10V 5V @ 250μA 4560pF @ 25V 110nC @ 10V 30V 250V 250V 5 V 45A Tc 10V ±30V
IRFB4233PBF IRFB4233PBF Infineon Technologies $0.00
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download Through Hole Tube 2007 HEXFET® Obsolete 1 (Unlimited) Through Hole 175°C -40°C 10.6426mm RoHS Compliant No 3 TO-220-3 No SVHC 16.51mm 4.82mm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) 1 Single 370W 31 ns 5V 37mOhm TO-220AB 370W Tc 56A 51 ns N-Channel 37mOhm @ 28A, 10V 5V @ 250μA 5510pF @ 25V 170nC @ 10V 30V 230V 276V 5 V 56A Tc 230V 5.51nF 10V ±30V 37 mΩ
IRFS3207PBF IRFS3207PBF Infineon Technologies $0.00
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download Tube 2006 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc SWITCHING 0.0045Ohm 75V SILICON N-Channel 4.5m Ω @ 75A, 10V 4V @ 250μA 7600pF @ 50V 260nC @ 10V 75A 170A Tc 75V 720A 910 mJ 10V ±20V
IRFS3607PBF IRFS3607PBF Infineon Technologies $0.00
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download 16 Weeks Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 140W 16 ns 4V 140W Tc 50 ns 80A 43 ns N-Channel 9m Ω @ 46A, 10V 4V @ 100μA 3070pF @ 50V 84nC @ 10V 110ns 96 ns 20V 75V 75V 4 V 80A Tc 10V ±20V
SPD01N60C3BTMA1 SPD01N60C3BTMA1 Infineon Technologies $0.00
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download Surface Mount Tape & Reel (TR) 2005 CoolMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant Contains Lead AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING 260 40 3 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Not Halogen Free 11W 30 ns 600V 11W Tc 800mA 6Ohm 55 ns SILICON N-Channel 6 Ω @ 500mA, 10V 3.9V @ 250μA 100pF @ 25V 5nC @ 10V 25ns 20V 0.8A 800mA Tc 650V 20 mJ 10V ±20V
IRF1324S-7PPBF IRF1324S-7PPBF Infineon Technologies $0.00
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download Surface Mount Tube 2006 HEXFET® Obsolete 1 (Unlimited) 6 SMD/SMT EAR99 10.795mm RoHS Compliant Lead Free Tin 429A No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.5466mm 8.15mm Surface Mount -55°C~175°C TJ 24V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G6 FET General Purpose Power 1 DRAIN Single 300W 19 ns 4V 300W Tc 107 ns 429A SWITCHING 86 ns SILICON N-Channel 1m Ω @ 160A, 10V 4V @ 250μA 7700pF @ 19V 252nC @ 10V 240ns 93 ns 20V 24V 24V 4 V 240A 240A Tc 230 mJ 10V ±20V