Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Reverse Recovery Time | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IPI70N04S307AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2007 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Contains Lead | 3 | ULTRA LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 40V | 79W Tc | 80A | 0.0071Ohm | SILICON | N-Channel | 6.5m Ω @ 70A, 10V | 4V @ 50μA | 2700pF @ 25V | 40nC @ 10V | 70A | 80A Tc | 145 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IPB50R299CPATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | CoolMOS™ | no | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 104W | 35 ns | 500V | 104W Tc | 12A | SWITCHING | 0.299Ohm | 80 ns | SILICON | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1190pF @ 100V | 31nC @ 10V | 14ns | 12 ns | 20V | 12A Tc | 550V | 26A | 289 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRFR13N20DTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2000 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W Tc | SWITCHING | 0.235Ohm | 200V | SILICON | N-Channel | 235m Ω @ 8A, 10V | 5.5V @ 250μA | 830pF @ 25V | 38nC @ 10V | 13A | 13A Tc | 200V | 52A | 130 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
IPI100N08S207AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Through Hole | Tube | 2006 | OptiMOS™ | Discontinued | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-262AB | Halogen Free | 300W | 26 ns | 75V | 300W Tc | 100A | 61 ns | SILICON | N-Channel | 7.1m Ω @ 80A, 10V | 4V @ 250μA | 4700pF @ 25V | 200nC @ 10V | 51ns | 30 ns | 20V | 100A Tc | 400A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFR9120NTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1998 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 40W Tc | SWITCHING | 0.48Ohm | 100V | SILICON | P-Channel | 480m Ω @ 3.9A, 10V | 4V @ 250μA | 350pF @ 25V | 27nC @ 10V | 6.6A | 6.6A Tc | 100V | 26A | 100 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFR220NTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2000 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 43W Tc | SWITCHING | 0.6Ohm | 200V | SILICON | N-Channel | 600m Ω @ 2.9A, 10V | 4V @ 250μA | 300pF @ 25V | 23nC @ 10V | 5A | 5A Tc | 200V | 20A | 46 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRLMS2002TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Cut Tape (CT) | 2003 | HEXFET® | Obsolete | 1 (Unlimited) | 6 | EAR99 | Non-RoHS Compliant | ULTRA-LOW RESISTANCE | SOT-23-6 | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G6 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | SWITCHING | 0.03Ohm | 20V | SILICON | N-Channel | 30m Ω @ 6.5A, 4.5V | 1.2V @ 250μA | 1310pF @ 15V | 22nC @ 5V | 6.5A | 6.5A Ta | 20V | 20A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR13N15DTR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2000 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | Non-RoHS Compliant | Contains Lead | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 86W Tc | 14A | SWITCHING | 0.18Ohm | SILICON | N-Channel | 180m Ω @ 8.3A, 10V | 5.5V @ 250μA | 620pF @ 25V | 29nC @ 10V | 26ns | 14A Tc | 56A | 130 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
IRF7241TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Tape & Reel (TR) | 2008 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | Non-RoHS Compliant | HIGH RELIABILITY | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G8 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | SILICON | P-Channel | 41m Ω @ 6.2A, 10V | 3V @ 250μA | 3220pF @ 25V | 80nC @ 10V | 6.2A | 6.2A Ta | 40V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF6622TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 4.826mm | RoHS Compliant | Lead Free | 15A | No | 5 | DirectFET™ Isometric SQ | 506μm | 3.95mm | Surface Mount | -40°C~150°C TJ | 25V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 34W | 9.4 ns | 2.2W Ta 34W Tc | 12A | SWITCHING | 0.0063Ohm | 13 ns | SILICON | N-Channel | 6.3m Ω @ 15A, 10V | 2.35V @ 25μA | 1450pF @ 13V | 17nC @ 4.5V | 16ns | 4.6 ns | 20V | 25V | 15A Ta 59A Tc | 120A | 13 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFH5302TR2PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 5mm | RoHS Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 810μm | 6mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 3.6W | 1 | Single | 100W | 18 ns | 1.8V | 2.1mOhm | PQFN (5x6) Single Die | 29 ns | 100A | 22 ns | N-Channel | 2.1mOhm @ 50A, 10V | 2.35V @ 100μA | 4400pF @ 15V | 76nC @ 10V | 51ns | 18 ns | 20V | 30V | 1.8 V | 32A Ta 100A Tc | 30V | 4.4nF | 2.1 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
IRLR3717TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 89W Tc | SWITCHING | 0.004Ohm | 20V | SILICON | N-Channel | 4m Ω @ 15A, 10V | 2.45V @ 250μA | 2830pF @ 10V | 31nC @ 4.5V | 30A | 120A Tc | 20V | 460A | 460 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
BSZ076N06NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerVDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.1W | 15 ns | 60V | 2.1W Ta 69W Tc | 20A | SWITCHING | 0.0076Ohm | 20 ns | SILICON | N-Channel | 7.6m Ω @ 20A, 10V | 4V @ 35μA | 4000pF @ 30V | 50nC @ 10V | 40ns | 5 ns | 20V | 20A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
SPD02N80C3BTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2013 | CoolMOS™ | yes | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | No | AVALANCHE RATED, HIGH VOLTAGE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 4 | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 42W | 25 ns | 800V | 42W Tc | 2A | SWITCHING | 65 ns | SILICON | N-Channel | 2.7 Ω @ 1.2A, 10V | 3.9V @ 120μA | 290pF @ 100V | 16nC @ 10V | 15ns | 18 ns | 20V | 2A | 2A Tc | 6A | 90 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRFSL4321PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.668mm | RoHS Compliant | Lead Free | 83A | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | 9.65mm | 4.826mm | Through Hole | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 330W | 18 ns | 5V | 350W Tc | 83A | SWITCHING | 25 ns | SILICON | N-Channel | 15m Ω @ 33A, 10V | 5V @ 250μA | 4460pF @ 25V | 110nC @ 10V | 60ns | 35 ns | 30V | 150V | 75A | 85A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
SPD04N60S5 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2005 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 2 | RoHS Compliant | Lead Free | Tin | 4.5A | No | 3 | AVALANCHE RATED, HIGH VOLTAGE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 3 | YES | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 50W | 55 ns | 50W Tc | 4.5A | SWITCHING | 0.95Ohm | 60 ns | SILICON | N-Channel | 950m Ω @ 2.8A, 10V | 5.5V @ 200μA | 580pF @ 25V | 22.9nC @ 10V | 30ns | 15 ns | 20V | 600V | 4.5A Tc | 9A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
BSP318SL6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1999 | SIPMOS® | Obsolete | 1 (Unlimited) | 4 | RoHS Compliant | No | 4 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.8W | 12 ns | 1.8W Ta | 2.6A | 60V | 20 ns | SILICON | N-Channel | 90m Ω @ 2.6A, 10V | 2V @ 20μA | 380pF @ 25V | 20nC @ 10V | 15ns | 15 ns | 20V | 2.6A Ta | 60V | 60 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRFS3006PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 375W | 16 ns | 4V | 375W Tc | 270A | SWITCHING | 0.0025Ohm | 118 ns | SILICON | N-Channel | 2.5m Ω @ 170A, 10V | 4V @ 250μA | 8970pF @ 50V | 300nC @ 10V | 182ns | 189 ns | 20V | 60V | 195A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRFH7921TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2008 | HEXFET® | Obsolete | 1 (Unlimited) | SMD/SMT | EAR99 | 5.2324mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 1.1684mm | 6.2484mm | 8.5MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | Single | 3.1W | 12 ns | 3.1W Ta | 15mA | 14 ns | N-Channel | 8.5m Ω @ 15A, 10V | 2.35V @ 25μA | 1210pF @ 15V | 14nC @ 4.5V | 7.6ns | 4.7 ns | 20V | 30V | 30V | 1.8 V | 34A | 15A Ta 34A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRFS4010-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET® | Discontinued | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 4.55mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | DRAIN | Single | 380W | 19 ns | 4V | 60 ns | 380W Tc | 190A | SWITCHING | 0.004Ohm | 100 ns | SILICON | N-Channel | 4m Ω @ 110A, 10V | 4V @ 250μA | 9830pF @ 50V | 230nC @ 10V | 56ns | 48 ns | 20V | 100V | 100V | 4 V | 190A Tc | 330 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||
IRFR9024NTRRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3876mm | 6.22mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 38W | 13 ns | 38W Tc | -11A | SWITCHING | 23 ns | SILICON | P-Channel | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 350pF @ 25V | 19nC @ 10V | 55ns | 37 ns | 20V | -55V | 11A Tc | 55V | 44A | 62 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IRFR2905ZTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 110W Tc | SWITCHING | 0.0145Ohm | 55V | SILICON | N-Channel | 14.5m Ω @ 36A, 10V | 4V @ 250μA | 1380pF @ 25V | 44nC @ 10V | 42A | 42A Tc | 55V | 240A | 82 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRFU1018EPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 6.7056mm | RoHS Compliant | Lead Free | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.3876mm | 8.4MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 110W | 13 ns | 4V | 110W Tc | 39 ns | 56A | SWITCHING | 55 ns | SILICON | N-Channel | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 2290pF @ 50V | 69nC @ 10V | 35ns | 46 ns | 20V | 60V | 79A | 56A Tc | 88 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRFP4410ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Through Hole | Bulk | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | Through Hole | EAR99 | 15.87mm | ROHS3 Compliant | Lead Free | No | 3 | TO-247-3 | No SVHC | 20.7mm | 5.3086mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 230W | 16 ns | 4V | 230W Tc | 57 ns | 97A | SWITCHING | 0.009Ohm | 43 ns | SILICON | N-Channel | 9m Ω @ 58A, 10V | 4V @ 150μA | 4820pF @ 50V | 120nC @ 10V | 52ns | 57 ns | 20V | 100V | 100V | 4 V | 97A Tc | 242 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IRFS4229PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.572mm | 9.65mm | Surface Mount | -40°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 330W | 18 ns | 5V | 330W Tc | 290 ns | 45A | 30 ns | N-Channel | 48m Ω @ 26A, 10V | 5V @ 250μA | 4560pF @ 25V | 110nC @ 10V | 30V | 250V | 250V | 5 V | 45A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRFB4233PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2007 | HEXFET® | Obsolete | 1 (Unlimited) | Through Hole | 175°C | -40°C | 10.6426mm | RoHS Compliant | No | 3 | TO-220-3 | No SVHC | 16.51mm | 4.82mm | Through Hole | -40°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 370W | 31 ns | 5V | 37mOhm | TO-220AB | 370W Tc | 56A | 51 ns | N-Channel | 37mOhm @ 28A, 10V | 5V @ 250μA | 5510pF @ 25V | 170nC @ 10V | 30V | 230V | 276V | 5 V | 56A Tc | 230V | 5.51nF | 10V | ±30V | 37 mΩ | |||||||||||||||||||||||||||||||||||||||||||||
IRFS3207PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | SWITCHING | 0.0045Ohm | 75V | SILICON | N-Channel | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 7600pF @ 50V | 260nC @ 10V | 75A | 170A Tc | 75V | 720A | 910 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IRFS3607PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 140W | 16 ns | 4V | 140W Tc | 50 ns | 80A | 43 ns | N-Channel | 9m Ω @ 46A, 10V | 4V @ 100μA | 3070pF @ 50V | 84nC @ 10V | 110ns | 96 ns | 20V | 75V | 75V | 4 V | 80A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
SPD01N60C3BTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2005 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | Contains Lead | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | 260 | 40 | 3 | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | Not Halogen Free | 11W | 30 ns | 600V | 11W Tc | 800mA | 6Ohm | 55 ns | SILICON | N-Channel | 6 Ω @ 500mA, 10V | 3.9V @ 250μA | 100pF @ 25V | 5nC @ 10V | 25ns | 20V | 0.8A | 800mA Tc | 650V | 20 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRF1324S-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 10.795mm | RoHS Compliant | Lead Free | Tin | 429A | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 4.5466mm | 8.15mm | Surface Mount | -55°C~175°C TJ | 24V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G6 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 19 ns | 4V | 300W Tc | 107 ns | 429A | SWITCHING | 86 ns | SILICON | N-Channel | 1m Ω @ 160A, 10V | 4V @ 250μA | 7700pF @ 19V | 252nC @ 10V | 240ns | 93 ns | 20V | 24V | 24V | 4 V | 240A | 240A Tc | 230 mJ | 10V | ±20V |
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