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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code Lead Length JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Forward Voltage Case Connection Halogen Free Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Feedback Cap-Max (Crss) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IRLS3036PBF IRLS3036PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) 2 SMD/SMT EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.65mm 2.4MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 380W 66 ns 2.5V 380W Tc 270A SWITCHING 110 ns SILICON N-Channel 2.4m Ω @ 165A, 10V 2.5V @ 250μA 11210pF @ 50V 140nC @ 4.5V 220ns 110 ns 16V 60V 60V 2.5 V 195A Tc 290 mJ 4.5V 10V ±16V
    IRFH7932TR2PBF IRFH7932TR2PBF Infineon Technologies $0.00
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    		 download Surface Mount Cut Tape (CT) 2008 HEXFET® Obsolete 1 (Unlimited) 150°C -55°C 5mm RoHS Compliant Lead Free No 8 8-PowerVDFN No SVHC 939.8μm 5.1054mm 3.3MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) Single 3.1W 20 ns 1.8V 3.3mOhm PQFN (5x6) Single Die 3.4W Ta 32 ns 24A 23 ns N-Channel 3.3mOhm @ 25A, 10V 2.35V @ 100μA 4270pF @ 15V 51nC @ 4.5V 48ns 20 ns 20V 30V 1.8 V 24A Ta 104A Tc 30V 4.27nF 3.3 mΩ
    IRF8721GTRPBF IRF8721GTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 4.9784mm ROHS3 Compliant No 8 8-SOIC (0.154, 3.90mm Width) Unknown 1.4986mm 3.9878mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE 2.5W 8.2 ns 2.5W Ta 14A SWITCHING 8.1 ns SILICON N-Channel 8.5m Ω @ 14A, 10V 2.35V @ 25μA 1040pF @ 15V 12nC @ 4.5V 11ns 7 ns 20V 30V 14A Ta 4.5V 10V ±20V
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    		 download Through Hole Tube 2010 HEXFET® Obsolete 1 (Unlimited) Through Hole 6.7056mm RoHS Compliant Lead Free 119A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.28mm 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 40V MOSFET (Metal Oxide) 9.65mm Single 140W 17 ns 4V 140W Tc 42 ns 119A 37 ns N-Channel 5.5m Ω @ 42A, 10V 4V @ 250μA 2950pF @ 25V 89nC @ 10V 69ns 36 ns 20V 40V 40V 4 V 42A Tc 10V ±20V
    IRFU3711ZPBF IRFU3711ZPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free 93A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 20V MOSFET (Metal Oxide) ENHANCEMENT MODE 1 DRAIN Single 79W 12 ns 2V 79W Tc 28 ns 93A SWITCHING 0.0057Ohm 15 ns SILICON N-Channel 5.7m Ω @ 15A, 10V 2.45V @ 250μA 2160pF @ 10V 27nC @ 4.5V 13ns 5.2 ns 20V 20V 2 V 93A Tc 140 mJ 4.5V 10V ±20V
    IRFR48ZPBF IRFR48ZPBF Infineon Technologies $0.00
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    		 download 15 Weeks Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 10.3886mm ROHS3 Compliant Lead Free 62A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.73mm 11MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 Single 91W 15 ns 4V 91W Tc 40 ns 42A 40 ns N-Channel 11m Ω @ 37A, 10V 4V @ 50μA 1720pF @ 25V 60nC @ 10V 61ns 35 ns 20V 55V 55V 4 V 42A Tc 10V ±20V
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    		 download Through Hole Tube 2004 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 6.7056mm RoHS Compliant Lead Free 84A No 3 TO-251-3 Short Leads, IPak, TO-251AA 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 12V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 88W 11 ns 88W Tc 84A SWITCHING 21 ns SILICON N-Channel 8.5m Ω @ 15A, 4.5V 1.9V @ 250μA 2490pF @ 6V 41nC @ 5V 14ns 17 ns 12V 12V 84A Tc 2.8V 4.5V ±12V
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    		 download Tube 2002 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 130W Tc SWITCHING 0.044Ohm 100V SILICON N-Channel 44m Ω @ 16A, 10V 4V @ 250μA 1960pF @ 25V 71nC @ 10V 32A 32A Tc 100V 110A 185 mJ 10V ±20V
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 6.73mm ROHS3 Compliant Lead Free -20A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.39mm 6.22mm 105MOhm Surface Mount -40°C~175°C TJ -55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 79W 9.5 ns -1V 79W Tc 20A AMPLIFIER 21 ns SILICON P-Channel 105m Ω @ 3.4A, 10V 1V @ 250μA 660pF @ 50V 47nC @ 10V 24ns 9.5 ns 20V -55V 20A Tc 55V 60A 4.5V 10V ±20V
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    		 Tube 2001 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 3W Ta 140W Tc SWITCHING 0.165Ohm 200V SILICON N-Channel 165m Ω @ 10A, 10V 5.5V @ 250μA 910pF @ 25V 41nC @ 10V 17A 17A Tc 200V 68A 260 mJ 10V ±30V
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    		 download Tube 2002 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 140W Tc N-Channel 95m Ω @ 14A, 10V 5V @ 250μA 890pF @ 25V 45nC @ 10V 24A Tc 150V 10V ±30V
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    		 download 14 Weeks Surface Mount Tube 2010 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free 75A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 3.3MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 1.3V Single 200W 17 ns 200W Tc 75A 59 ns N-Channel 3.3m Ω @ 140A, 10V 4V @ 250μA 5730pF @ 25V 200nC @ 10V 130ns 48 ns 20V 30V 4 V 75A Tc 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.826mm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 330W 17 ns 4V 330W Tc 75A SWITCHING 59 ns SILICON N-Channel 3.3m Ω @ 140A, 10V 4V @ 250μA 5730pF @ 25V 200nC @ 10V 130ns 48 ns 20V 30V 4 V 75A Tc 960A 980 mJ 10V ±20V
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    		 download Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 160W Tc SWITCHING 0.018Ohm 100V SILICON N-Channel 18m Ω @ 35A, 10V 4V @ 250μA 2900pF @ 25V 120nC @ 10V 59A 59A Tc 100V 240A 200 mJ 10V ±20V
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    		 Tube 1999 HEXFET® Obsolete 1 (Unlimited) 8 EAR99 Non-RoHS Compliant ULTRA LOW RESISTANCE 8-SOIC (0.154, 3.90mm Width) Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PDSO-G8 1 SINGLE WITH BUILT-IN DIODE MS-012AA 2.5W Ta SWITCHING 0.02Ohm 30V SILICON P-Channel 20m Ω @ 8A, 10V 1V @ 250μA 2320pF @ 15V 60nC @ 10V 8A 8A Tc 30V 50A 4.5V 10V ±20V
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    		 download Cut Tape (CT) 2003 HEXFET® Discontinued 1 (Unlimited) 3 EAR99 Non-RoHS Compliant HIGH RELIABILITY TO-236-3, SC-59, SOT-23-3 Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G3 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-236AB 1.25W SWITCHING 0.045Ohm 20V SILICON N-Channel 45m Ω @ 4.2A, 4.5V 1.2V @ 250μA 740pF @ 15V 12nC @ 5V 4.2A 4.2A Ta 20V 33A
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    		 download Surface Mount Tube 2002 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free 135A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.652mm 4.7mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) 1 Single 200W 14 ns 4V 200W Tc 135A 68 ns N-Channel 4.7m Ω @ 104A, 10V 4V @ 250μA 5110pF @ 25V 230nC @ 10V 120ns 110 ns 20V 55V 55V 4 V 135A Tc 10V ±20V
    IPS090N03LGAKMA1 IPS090N03LGAKMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 OptiMOS™ no Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-251-3 Stub Leads, IPak Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 42W 42W Tc 40A SWITCHING SILICON N-Channel 9m Ω @ 30A, 10V 2.2V @ 250μA 1600pF @ 15V 15nC @ 10V 40A Tc 30V 280A 70 mJ 4.5V 10V ±20V
    IPP114N03L G IPP114N03L G Infineon Technologies $0.00
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    		 download Tube 2008 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-220-3 compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN SINGLE 260 NOT SPECIFIED 3 NO R-PSFM-T3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB 38W Tc SWITCHING 0.0114Ohm 30V SILICON N-Channel 11.4m Ω @ 30A, 10V 2.2V @ 250μA 1500pF @ 15V 14nC @ 10V 30A 30A Tc 30V 210A 30 mJ 4.5V 10V ±20V
    IRLSL3036PBF IRLSL3036PBF Infineon Technologies $0.00
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    		 download 15 Weeks Through Hole Tube 2008 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-262-3 Long Leads, I2Pak, TO-262AA 9.652mm 4.826mm 2.4MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 40 FET General Purpose Power 1 DRAIN Single 380W 66 ns 380W Tc 195A SWITCHING 110 ns SILICON N-Channel 2.4m Ω @ 165A, 10V 2.5V @ 250μA 11210pF @ 50V 140nC @ 4.5V 220ns 110 ns 16V 60V 270A 195A Tc 290 mJ 4.5V 10V ±16V
    IRFR4615PBF IRFR4615PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free Tin No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 1.778mm 6.22mm 42MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 144W 15 ns 5V 144W Tc 33A 25 ns N-Channel 42m Ω @ 21A, 10V 5V @ 100μA 1750pF @ 50V 26nC @ 10V 35ns 20 ns 20V 150V 150V 5 V 33A Tc 10V ±20V
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    		 download Surface Mount Tube 2008 HEXFET® Discontinued 1 (Unlimited) EAR99 10.668mm ROHS3 Compliant Lead Free No 7 TO-263-7, D2Pak (6 Leads + Tab), TO-263CB No SVHC 4.572mm 9.65mm 1.9MOhm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 1 Single 380W 81 ns 2.5V 380W Tc 300A 89 ns N-Channel 1.9m Ω @ 180A, 10V 2.5V @ 250μA 11270pF @ 50V 160nC @ 4.5V 540ns 170 ns 16V 60V 240A Tc 4.5V 10V ±16V
    BSR316PL6327HTSA1 BSR316PL6327HTSA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2015 SIPMOS® yes Discontinued 1 (Unlimited) 3 EAR99 ROHS3 Compliant Tin 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 40 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE 500mW 500mW Ta 360mA SILICON P-Channel 1.8 Ω @ 360mA, 10V 1V @ 170μA 165pF @ 25V 7nC @ 10V 6ns 20V 360mA Ta 100V 20 pF 4.5V 10V ±20V
    IPA60R250CPXKSA1 IPA60R250CPXKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 RoHS Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 33W 40 ns 600V 33W Tc 12A SWITCHING 0.25Ohm 110 ns SILICON N-Channel 250m Ω @ 7.8A, 10V 3.5V @ 440μA 1300pF @ 100V 35nC @ 10V 17ns 12 ns 20V 12A Tc 650V 40A 10V ±20V
    IPB160N04S203ATMA1 IPB160N04S203ATMA1 Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2006 OptiMOS™ Discontinued 1 (Unlimited) 6 EAR99 ROHS3 Compliant ULTRA-LOW RESISTANCE TO-263-7, D2Pak (6 Leads + Tab) Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING YES R-PSSO-G6 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 300W Tc 0.0029Ohm 40V SILICON N-Channel 2.9m Ω @ 60A, 10V 4V @ 250μA 5300pF @ 25V 170nC @ 10V 160A 160A Tc 40V 640A 810 mJ 10V ±20V
    IPA50R299CPXKSA1 IPA50R299CPXKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 104W 35 ns 500V 104W Tc 12A SWITCHING 0.299Ohm 80 ns SILICON N-Channel 299m Ω @ 6.6A, 10V 3.5V @ 440μA 1190pF @ 100V 31nC @ 10V 14ns 12 ns 20V 12A Tc 550V 26A 289 mJ 10V ±20V
    IPB80N06S207ATMA1 IPB80N06S207ATMA1 Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2010 OptiMOS™ Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) Halogen Free 55V 250W Tc 80A 61 ns N-Channel 6.3m Ω @ 68A, 10V 4V @ 180μA 3400pF @ 25V 110nC @ 10V 37ns 36 ns 80A Tc 10V ±20V
    IPD50R520CP IPD50R520CP Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2008 CoolMOS™ yes Obsolete 1 (Unlimited) 2 EAR99 RoHS Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 3 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 66W Tc SWITCHING 0.52Ohm 500V SILICON N-Channel 520m Ω @ 3.8A, 10V 3.5V @ 250μA 680pF @ 100V 17nC @ 10V 7.1A 7.1A Tc 550V 15A 166 mJ 10V ±20V
    IPI22N03S4L15AKSA1 IPI22N03S4L15AKSA1 Infineon Technologies $0.00
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    		 download Tube 2007 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 RoHS Compliant ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE 31W Tc 0.0149Ohm 30V SILICON N-Channel 14.9m Ω @ 22A, 10V 2.2V @ 10μA 980pF @ 25V 14nC @ 10V 22A 22A Tc 30V 88A 20 mJ 4.5V 10V ±16V
    IPI50R350CP IPI50R350CP Infineon Technologies $0.00
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    		 download 26 Weeks Through Hole Tube 2007 CoolMOS™ yes Obsolete 1 (Unlimited) 3 Through Hole RoHS Compliant Lead Free 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 Halogen Free Single 89W 35 ns 3V 500V 89W Tc 10A SWITCHING 80 ns SILICON N-Channel 350m Ω @ 5.6A, 10V 3.5V @ 370μA 1020pF @ 100V 25nC @ 10V 14ns 12 ns 20V 500V 550V 3 V 10A Tc 22A 246 mJ 10V ±20V