Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | Lead Length | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Operating Temperature (Max) | Subcategory | Qualification Status | Reference Standard | Number of Elements | Configuration | JEDEC-95 Code | Forward Voltage | Case Connection | Halogen Free | Power Dissipation-Max (Abs) | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IRLS3036PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 2.4MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 380W | 66 ns | 2.5V | 380W Tc | 270A | SWITCHING | 110 ns | SILICON | N-Channel | 2.4m Ω @ 165A, 10V | 2.5V @ 250μA | 11210pF @ 50V | 140nC @ 4.5V | 220ns | 110 ns | 16V | 60V | 60V | 2.5 V | 195A Tc | 290 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
IRFH7932TR2PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 2008 | HEXFET® | Obsolete | 1 (Unlimited) | 150°C | -55°C | 5mm | RoHS Compliant | Lead Free | No | 8 | 8-PowerVDFN | No SVHC | 939.8μm | 5.1054mm | 3.3MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | Single | 3.1W | 20 ns | 1.8V | 3.3mOhm | PQFN (5x6) Single Die | 3.4W Ta | 32 ns | 24A | 23 ns | N-Channel | 3.3mOhm @ 25A, 10V | 2.35V @ 100μA | 4270pF @ 15V | 51nC @ 4.5V | 48ns | 20 ns | 20V | 30V | 1.8 V | 24A Ta 104A Tc | 30V | 4.27nF | 3.3 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRF8721GTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | 4.9784mm | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Unknown | 1.4986mm | 3.9878mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | 2.5W | 8.2 ns | 2.5W Ta | 14A | SWITCHING | 8.1 ns | SILICON | N-Channel | 8.5m Ω @ 14A, 10V | 2.35V @ 25μA | 1040pF @ 15V | 12nC @ 4.5V | 11ns | 7 ns | 20V | 30V | 14A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRFU4104PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | Through Hole | 6.7056mm | RoHS Compliant | Lead Free | 119A | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 2.28mm | 6.22mm | 2.3876mm | Through Hole | -55°C~175°C TJ | 40V | MOSFET (Metal Oxide) | 9.65mm | Single | 140W | 17 ns | 4V | 140W Tc | 42 ns | 119A | 37 ns | N-Channel | 5.5m Ω @ 42A, 10V | 4V @ 250μA | 2950pF @ 25V | 89nC @ 10V | 69ns | 36 ns | 20V | 40V | 40V | 4 V | 42A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IRFU3711ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 6.7056mm | RoHS Compliant | Lead Free | 93A | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | No SVHC | 6.22mm | 2.3876mm | Through Hole | -55°C~175°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 1 | DRAIN | Single | 79W | 12 ns | 2V | 79W Tc | 28 ns | 93A | SWITCHING | 0.0057Ohm | 15 ns | SILICON | N-Channel | 5.7m Ω @ 15A, 10V | 2.45V @ 250μA | 2160pF @ 10V | 27nC @ 4.5V | 13ns | 5.2 ns | 20V | 20V | 2 V | 93A Tc | 140 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRFR48ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 10.3886mm | ROHS3 Compliant | Lead Free | 62A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.73mm | 11MOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | 1 | Single | 91W | 15 ns | 4V | 91W Tc | 40 ns | 42A | 40 ns | N-Channel | 11m Ω @ 37A, 10V | 4V @ 50μA | 1720pF @ 25V | 60nC @ 10V | 61ns | 35 ns | 20V | 55V | 55V | 4 V | 42A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRLU3802PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 6.7056mm | RoHS Compliant | Lead Free | 84A | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | 6.22mm | 2.3876mm | Through Hole | -55°C~175°C TJ | 12V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 30 | FET General Purpose Power | 1 | DRAIN | Single | 88W | 11 ns | 88W Tc | 84A | SWITCHING | 21 ns | SILICON | N-Channel | 8.5m Ω @ 15A, 4.5V | 1.9V @ 250μA | 2490pF @ 6V | 41nC @ 5V | 14ns | 17 ns | 12V | 12V | 84A Tc | 2.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||
IRFR3411PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2002 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 130W Tc | SWITCHING | 0.044Ohm | 100V | SILICON | N-Channel | 44m Ω @ 16A, 10V | 4V @ 250μA | 1960pF @ 25V | 71nC @ 10V | 32A | 32A Tc | 100V | 110A | 185 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRLR9343PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | -20A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 105MOhm | Surface Mount | -40°C~175°C TJ | -55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN OVER NICKEL | GULL WING | 260 | 30 | R-PSSO-G2 | 1 | TO-252AA | DRAIN | Single | 79W | 9.5 ns | -1V | 79W Tc | 20A | AMPLIFIER | 21 ns | SILICON | P-Channel | 105m Ω @ 3.4A, 10V | 1V @ 250μA | 660pF @ 50V | 47nC @ 10V | 24ns | 9.5 ns | 20V | -55V | 20A Tc | 55V | 60A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IRFR15N20DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Tube | 2001 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 3W Ta 140W Tc | SWITCHING | 0.165Ohm | 200V | SILICON | N-Channel | 165m Ω @ 10A, 10V | 5.5V @ 250μA | 910pF @ 25V | 41nC @ 10V | 17A | 17A Tc | 200V | 68A | 260 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRFR24N15DPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2002 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 140W Tc | N-Channel | 95m Ω @ 14A, 10V | 5V @ 250μA | 890pF @ 25V | 45nC @ 10V | 24A Tc | 150V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1503SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.65mm | 3.3MOhm | Surface Mount | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | 1 | 1.3V | Single | 200W | 17 ns | 200W Tc | 75A | 59 ns | N-Channel | 3.3m Ω @ 140A, 10V | 4V @ 250μA | 5730pF @ 25V | 200nC @ 10V | 130ns | 48 ns | 20V | 30V | 4 V | 75A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRF1503PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2002 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 75A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 16.51mm | 4.826mm | Through Hole | -55°C~175°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 330W | 17 ns | 4V | 330W Tc | 75A | SWITCHING | 59 ns | SILICON | N-Channel | 3.3m Ω @ 140A, 10V | 4V @ 250μA | 5730pF @ 25V | 200nC @ 10V | 130ns | 48 ns | 20V | 30V | 4 V | 75A Tc | 960A | 980 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF3710ZSPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 160W Tc | SWITCHING | 0.018Ohm | 100V | SILICON | N-Channel | 18m Ω @ 35A, 10V | 4V @ 250μA | 2900pF @ 25V | 120nC @ 10V | 59A | 59A Tc | 100V | 240A | 200 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
SI4435DY | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
Tube | 1999 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | Non-RoHS Compliant | ULTRA LOW RESISTANCE | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-G8 | 1 | SINGLE WITH BUILT-IN DIODE | MS-012AA | 2.5W Ta | SWITCHING | 0.02Ohm | 30V | SILICON | P-Channel | 20m Ω @ 8A, 10V | 1V @ 250μA | 2320pF @ 15V | 60nC @ 10V | 8A | 8A Tc | 30V | 50A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLML2502TR | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Cut Tape (CT) | 2003 | HEXFET® | Discontinued | 1 (Unlimited) | 3 | EAR99 | Non-RoHS Compliant | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | Surface Mount | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | YES | R-PDSO-G3 | 150°C | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-236AB | 1.25W | SWITCHING | 0.045Ohm | 20V | SILICON | N-Channel | 45m Ω @ 4.2A, 4.5V | 1.2V @ 250μA | 740pF @ 15V | 12nC @ 5V | 4.2A | 4.2A Ta | 20V | 33A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRF2805SPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2002 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | 135A | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.826mm | 9.652mm | 4.7mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | 1 | Single | 200W | 14 ns | 4V | 200W Tc | 135A | 68 ns | N-Channel | 4.7m Ω @ 104A, 10V | 4V @ 250μA | 5110pF @ 25V | 230nC @ 10V | 120ns | 110 ns | 20V | 55V | 55V | 4 V | 135A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IPS090N03LGAKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-251-3 Stub Leads, IPak | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 42W | 42W Tc | 40A | SWITCHING | SILICON | N-Channel | 9m Ω @ 30A, 10V | 2.2V @ 250μA | 1600pF @ 15V | 15nC @ 10V | 40A Tc | 30V | 280A | 70 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IPP114N03L G | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-220-3 | compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | SINGLE | 260 | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 38W Tc | SWITCHING | 0.0114Ohm | 30V | SILICON | N-Channel | 11.4m Ω @ 30A, 10V | 2.2V @ 250μA | 1500pF @ 15V | 14nC @ 10V | 30A | 30A Tc | 30V | 210A | 30 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IRLSL3036PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Through Hole | Tube | 2008 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.652mm | 4.826mm | 2.4MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 40 | FET General Purpose Power | 1 | DRAIN | Single | 380W | 66 ns | 380W Tc | 195A | SWITCHING | 110 ns | SILICON | N-Channel | 2.4m Ω @ 165A, 10V | 2.5V @ 250μA | 11210pF @ 50V | 140nC @ 4.5V | 220ns | 110 ns | 16V | 60V | 270A | 195A Tc | 290 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
IRFR4615PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 1.778mm | 6.22mm | 42MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 144W | 15 ns | 5V | 144W Tc | 33A | 25 ns | N-Channel | 42m Ω @ 21A, 10V | 5V @ 100μA | 1750pF @ 50V | 26nC @ 10V | 35ns | 20 ns | 20V | 150V | 150V | 5 V | 33A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
IRLS3036-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | No SVHC | 4.572mm | 9.65mm | 1.9MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | Single | 380W | 81 ns | 2.5V | 380W Tc | 300A | 89 ns | N-Channel | 1.9m Ω @ 180A, 10V | 2.5V @ 250μA | 11270pF @ 50V | 160nC @ 4.5V | 540ns | 170 ns | 16V | 60V | 240A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSR316PL6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2015 | SIPMOS® | yes | Discontinued | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 500mW | 500mW Ta | 360mA | SILICON | P-Channel | 1.8 Ω @ 360mA, 10V | 1V @ 170μA | 165pF @ 25V | 7nC @ 10V | 6ns | 20V | 360mA Ta | 100V | 20 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA60R250CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 33W | 40 ns | 600V | 33W Tc | 12A | SWITCHING | 0.25Ohm | 110 ns | SILICON | N-Channel | 250m Ω @ 7.8A, 10V | 3.5V @ 440μA | 1300pF @ 100V | 35nC @ 10V | 17ns | 12 ns | 20V | 12A Tc | 650V | 40A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPB160N04S203ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2006 | OptiMOS™ | Discontinued | 1 (Unlimited) | 6 | EAR99 | ROHS3 Compliant | ULTRA-LOW RESISTANCE | TO-263-7, D2Pak (6 Leads + Tab) | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | YES | R-PSSO-G6 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 300W Tc | 0.0029Ohm | 40V | SILICON | N-Channel | 2.9m Ω @ 60A, 10V | 4V @ 250μA | 5300pF @ 25V | 170nC @ 10V | 160A | 160A Tc | 40V | 640A | 810 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA50R299CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | Halogen Free | 104W | 35 ns | 500V | 104W Tc | 12A | SWITCHING | 0.299Ohm | 80 ns | SILICON | N-Channel | 299m Ω @ 6.6A, 10V | 3.5V @ 440μA | 1190pF @ 100V | 31nC @ 10V | 14ns | 12 ns | 20V | 12A Tc | 550V | 26A | 289 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IPB80N06S207ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | Discontinued | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | Halogen Free | 55V | 250W Tc | 80A | 61 ns | N-Channel | 6.3m Ω @ 68A, 10V | 4V @ 180μA | 3400pF @ 25V | 110nC @ 10V | 37ns | 36 ns | 80A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPD50R520CP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 66W Tc | SWITCHING | 0.52Ohm | 500V | SILICON | N-Channel | 520m Ω @ 3.8A, 10V | 3.5V @ 250μA | 680pF @ 100V | 17nC @ 10V | 7.1A | 7.1A Tc | 550V | 15A | 166 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
IPI22N03S4L15AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2007 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | ULTRA LOW RESISTANCE | TO-262-3 Long Leads, I2Pak, TO-262AA | compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | 31W Tc | 0.0149Ohm | 30V | SILICON | N-Channel | 14.9m Ω @ 22A, 10V | 2.2V @ 10μA | 980pF @ 25V | 14nC @ 10V | 22A | 22A Tc | 30V | 88A | 20 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPI50R350CP | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Through Hole | Tube | 2007 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | Through Hole | RoHS Compliant | Lead Free | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | No SVHC | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | Halogen Free | Single | 89W | 35 ns | 3V | 500V | 89W Tc | 10A | SWITCHING | 80 ns | SILICON | N-Channel | 350m Ω @ 5.6A, 10V | 3.5V @ 370μA | 1020pF @ 100V | 25nC @ 10V | 14ns | 12 ns | 20V | 500V | 550V | 3 V | 10A Tc | 22A | 246 mJ | 10V | ±20V |
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