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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Drive Voltage (Max Rds On,Min Rds On) Vgs (Max)
    IRFZ48NSTRLPBF IRFZ48NSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free 64A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 14MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 130W 12 ns 4V 100 ns 3.8W Ta 130W Tc 100 ns 64A SWITCHING 34 ns SILICON N-Channel 14m Ω @ 32A, 10V 4V @ 250μA 1970pF @ 25V 81nC @ 10V 78ns 50 ns 20V 55V 55V 4 V 64A Tc 10V ±20V
    IRF520NPBF IRF520NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 9.7A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 48W 4.5 ns 4V 48W Tc 150 ns 9.7A SWITCHING 0.2Ohm 32 ns SILICON N-Channel 200m Ω @ 5.7A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 23ns 23 ns 20V 100V 100V 4 V 9.5A 9.7A Tc 10V ±20V
    IRF9530NPBF IRF9530NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free Tin -14A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 200mOhm Through Hole -55°C~175°C TJ -100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 Other Transistors 1 TO-220AB DRAIN Single 79W 15 ns -4V 79W Tc 190 ns -14A SWITCHING 45 ns SILICON P-Channel 200m Ω @ 8.4A, 10V 4V @ 250μA 760pF @ 25V 58nC @ 10V 58ns 46 ns 20V -100V -100V -4 V 14A Tc 100V 56A 250 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 1998 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free 17A No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 100mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 MATTE TIN OVER NICKEL 260 30 FET General Purpose Power 1 TO-220AB DRAIN Single 79W 7.2 ns 2V 79W Tc 210 ns 17A SWITCHING 30 ns SILICON N-Channel 100m Ω @ 9A, 10V 2V @ 250μA 800pF @ 25V 34nC @ 5V 53ns 26 ns 16V 100V 100V 2 V 17A Tc 60A 4V 10V ±16V
    IPP50R380CEXKSA1 IPP50R380CEXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 TO-220AB Halogen Free Single 73W 7.2 ns 500V 73W Tc 32.4A SWITCHING 35 ns SILICON N-Channel 380m Ω @ 3.2A, 13V 3.5V @ 260μA 584pF @ 100V 24.8nC @ 10V 5.6ns 8.6 ns 20V 550V Super Junction 9.9A Tc 13V ±20V
    IRLZ34NPBF IRLZ34NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 EAR99 10.5156mm ROHS3 Compliant Lead Free Tin 30A No 3 AVALANCHE RATED TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 35mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 250 30 1 TO-220AB DRAIN Single 56W 8.9 ns 2V 68W Tc 110 ns 30A SWITCHING 21 ns SILICON N-Channel 35m Ω @ 16A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 100ns 29 ns 16V 55V 55V 2 V 30A Tc 4V 10V ±16V
    IRL3103PBF IRL3103PBF Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free 64A No 3 HIGH RELIABILITY, AVALANCHE RATED TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 12MOhm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 83W 8.9 ns 1V 94W Tc 64A SWITCHING 14 ns SILICON N-Channel 12m Ω @ 34A, 10V 1V @ 250μA 1650pF @ 25V 33nC @ 4.5V 120ns 9.1 ns 16V 30V 30V 1 V 56A 64A Tc 220A 4.5V 10V ±16V
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    		 download 26 Weeks Tape & Reel (TR) 2012 OptiMOS™ yes Active 3 (168 Hours) 3 EAR99 ROHS3 Compliant Lead Free 7 3-WDSON No SVHC Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e4 Silver/Nickel (Ag/Ni) BOTTOM NO LEAD NOT SPECIFIED NOT SPECIFIED 3 YES R-MBCC-N3 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 78W 21 ns 3V 2.2W Ta 78W Tc 90A SWITCHING 0.0028Ohm 38 ns SILICON N-Channel 2.8m Ω @ 30A, 10V 4V @ 102μA 12000pF @ 30V 143nC @ 10V 9ns 6 ns 20V 60V 22A 22A Ta 90A Tc 360A 590 mJ 10V ±20V
    IPA60R360P7SXKSA1 IPA60R360P7SXKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2014 CoolMOS™ P7 Active Not Applicable 3 EAR99 ROHS3 Compliant TO-220-3 Full Pack Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSFM-T3 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED 22W Tc SWITCHING 0.36Ohm 600V SILICON N-Channel 360m Ω @ 2.7A, 10V 4V @ 140μA 555pF @ 400V 13nC @ 10V 9A Tc 600V 26A 27 mJ 10V ±20V
    IPB120N04S402ATMA1 IPB120N04S402ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE Halogen Free 27 ns 40V 158W Tc 120A 0.0018Ohm 30 ns SILICON N-Channel 1.8m Ω @ 100A, 10V 4V @ 110μA 10740pF @ 25V 134nC @ 10V 16ns 20V 120A Tc 480A 480 mJ 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 EAR99 6.73mm ROHS3 Compliant Lead Free No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.39mm 2.4MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 DRAIN Single 140W 11 ns 3V 140W Tc 90A SWITCHING 51 ns SILICON N-Channel 2.4m Ω @ 90A, 10V 3.9V @ 100μA 4610pF @ 25V 134nC @ 10V 39ns 34 ns 20V 40V 3 V 90A Tc 760A 6V 10V ±20V
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    		 download 13 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ no Active 1 (Unlimited) 6 EAR99 ROHS3 Compliant Contains Lead 7 TO-263-7, D2Pak (6 Leads + Tab) No SVHC not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 7 R-PSSO-G6 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 214W 23 ns 2.8V 80V 214W Tc 160A SWITCHING 0.003Ohm 45 ns SILICON N-Channel 3m Ω @ 100A, 10V 3.5V @ 155μA 8110pF @ 40V 117nC @ 10V 79ns 14 ns 20V 160A Tc 640A 6V 10V ±20V
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    		 download Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free No 3 TO-220-3 Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE 3 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 83W 70 ns 900V 83W Tc 5.1A SWITCHING 400 ns SILICON N-Channel 1.2 Ω @ 2.8A, 10V 3.5V @ 310μA 710pF @ 100V 28nC @ 10V 20ns 40 ns 20V 5.1A Tc 68 mJ 10V ±20V
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    		 download 10 Weeks Through Hole Tube 2009 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant 3 TO-220-3 No SVHC 16.51mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 230W 15 ns 230W Tc 160A SWITCHING 0.0042Ohm 40 ns SILICON N-Channel 4.2m Ω @ 75A, 10V 4V @ 150μA 4520pF @ 50V 120nC @ 10V 76ns 77 ns 20V 60V 4 V 120A Tc 620A 10V ±20V
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 R-PDSO-F5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 69W 25V 2.5W Ta 69W Tc 29A SWITCHING 0.0023Ohm SILICON N-Channel 1.8m Ω @ 30A, 10V 2V @ 250μA 2800pF @ 12V 39nC @ 10V 4.4ns 20V 29A Ta 100A Tc 400A 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Active 1 (Unlimited) 2 EAR99 4.826mm ROHS3 Compliant Lead Free No 6 DirectFET™ Isometric SQ 506μm 3.95mm 4.9MOhm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e1 Tin/Silver/Copper (Sn/Ag/Cu) BOTTOM R-XBCC-N2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 36W 11 ns 2.2W Ta 36W Tc 17A SWITCHING 14 ns SILICON N-Channel 4.9m Ω @ 17A, 10V 2.4V @ 50μA 1570pF @ 13V 18nC @ 4.5V 40ns 12 ns 20V 25V 17A Ta 68A Tc 4.5V 10V ±20V
    IPSA70R950CEAKMA1 IPSA70R950CEAKMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tube 2013 Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant TO-251-3 Stub Leads, IPak not_compliant Through Hole -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 1 SINGLE WITH BUILT-IN DIODE DRAIN 94W Tc SWITCHING 0.95Ohm 700V SILICON N-Channel 950m Ω @ 1.5A, 10V 3.5V @ 150μA 328pF @ 100V 15.3nC @ 10V 8.7A Tc 700V 12A 50 mJ 10V ±20V
    IPP120N08S403AKSA1 IPP120N08S403AKSA1 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant 20.7mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN Halogen Free 278W 30 ns 80V 278W Tc 120A 175°C 0.0028Ohm 60 ns SILICON N-Channel 2.8m Ω @ 100A, 10V 4V @ 223μA 11550pF @ 25V 167nC @ 10V 15ns 50 ns 20V 80V 120A Tc 480A 920 mJ 10V ±20V
    AUIRFR024NTRL AUIRFR024NTRL Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2015 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 45W 4.9 ns 45W Tc 17A SWITCHING 0.075Ohm 19 ns SILICON N-Channel 75m Ω @ 10A, 10V 4V @ 250μA 370pF @ 25V 20nC @ 10V 34ns 27 ns 20V 55V 17A Tc 68A 71 mJ
    IPA60R750E6XKSA1 IPA60R750E6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 27W 9 ns 600V 27W Tc 5.7A SWITCHING 0.75Ohm 50 ns SILICON N-Channel 750m Ω @ 2A, 10V 3.5V @ 170μA 373pF @ 100V 17.2nC @ 10V 7ns 12 ns 20V 5.7A Tc 72 mJ 10V ±20V
    IPD90N06S4L05ATMA2 IPD90N06S4L05ATMA2 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2009 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING R-PSSO-G2 1 1 SINGLE WITH BUILT-IN DIODE DRAIN 14 ns 60V 107W Tc 90A 0.0046Ohm 80 ns SILICON N-Channel 4.6m Ω @ 90A, 10V 2.2V @ 60μA 8180pF @ 25V 110nC @ 10V 4ns 13 ns 16V 90A Tc 4.5V 10V ±16V
    IRFR4104TRLPBF IRFR4104TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 140W Tc SWITCHING 0.0055Ohm 40V SILICON N-Channel 5.5m Ω @ 42A, 10V 4V @ 250μA 2950pF @ 25V 89nC @ 10V 42A 42A Tc 40V 480A 145 mJ 10V ±20V
    AUIRLR2703TRL AUIRLR2703TRL Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Tin No 3 AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 45W 8.5 ns 45W Tc 23A SWITCHING 0.045Ohm 12 ns SILICON N-Channel 45m Ω @ 14A, 10V 1V @ 250μA 450pF @ 25V 15nC @ 4.5V 140ns 20 ns 16V 30V 20A 20A Tc 96A 200 mJ
    BSZ0500NSIATMA1 BSZ0500NSIATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 30V 2.1W Ta 69W Tc 40A SWITCHING 0.0019Ohm SILICON N-Channel 1.5m Ω @ 20A, 10V 2V @ 250μA 3400pF @ 15V 52nC @ 10V 30A 30A Ta 40A Tc 160A 90 mJ 4.5V 10V ±20V
    IPB80N04S306ATMA1 IPB80N04S306ATMA1 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2007 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 15 ns 40V 100W Tc 80A 0.0054Ohm 20 ns SILICON N-Channel 5.4m Ω @ 80A, 10V 4V @ 52μA 3250pF @ 25V 47nC @ 10V 10ns 20V 80A Tc 125 mJ 10V ±20V
    IPD90N06S404ATMA2 IPD90N06S404ATMA2 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2005 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 ROHS3 Compliant Lead Free No TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount 3.949996g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W 30 ns 60V 150W Tc 90A 0.0038Ohm 40 ns SILICON N-Channel 3.8m Ω @ 90A, 10V 4V @ 90μA 10400pF @ 25V 128nC @ 10V 70ns 5 ns 20V 90A Tc 360A 10V ±20V
    IRLU7843PBF IRLU7843PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 161A No 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 6.22mm 2.3876mm Through Hole -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 140W 25 ns 2.3V 140W Tc 161A SWITCHING 34 ns SILICON N-Channel 3.3m Ω @ 15A, 10V 2.3V @ 250μA 4380pF @ 15V 50nC @ 4.5V 42ns 19 ns 20V 30V 161A Tc 620A 1440 mJ 4.5V 10V ±20V
    IRLR3110ZTRRPBF IRLR3110ZTRRPBF Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2009 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 6.7056mm ROHS3 Compliant No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW ON RESISTANCE TO-252-3, DPak (2 Leads + Tab), SC-63 2.26mm 6.22mm Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 140W 24 ns 140W Tc 42A SWITCHING 33 ns SILICON N-Channel 14m Ω @ 38A, 10V 2.5V @ 100μA 3980pF @ 25V 48nC @ 4.5V 110ns 48 ns 16V 100V 42A Tc 250A 4.5V 10V ±16V
    IPB80P03P4L07ATMA1 IPB80P03P4L07ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2008 OptiMOS™ Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 8 ns -30V 88W Tc 80A SWITCHING 0.0069Ohm 15 ns SILICON P-Channel 6.9m Ω @ 80A, 10V 2V @ 130μA 5700pF @ 25V 80nC @ 10V 4ns 60 ns 5V 80A Tc 30V 4.5V 10V +5V, -16V
    IRF640NSTRRPBF IRF640NSTRRPBF Infineon Technologies $0.00
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    		 download Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 150W Tc SWITCHING 0.15Ohm 200V SILICON N-Channel 150m Ω @ 11A, 10V 4V @ 250μA 1160pF @ 25V 67nC @ 10V 18A 18A Tc 200V 72A 247 mJ 10V ±20V