Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Technology | Operating Mode | Type | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Drain to Source Resistance | Supplier Device Package | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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IPD60R750E6BTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2017 | CoolMOS™ | no | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W Tc | SWITCHING | 0.75Ohm | 600V | SILICON | N-Channel | 750m Ω @ 2A, 10V | 3.5V @ 170μA | 373pF @ 100V | 17.2nC @ 10V | 5.7A Tc | 600V | 15.7A | 72 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
AUIRF3710Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10.6426mm | RoHS Compliant | No | 3 | TO-220-3 | No SVHC | 9.017mm | 4.82mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | Single | 160W | 17 ns | 2V | 160W Tc | 59A | SWITCHING | 41 ns | SILICON | N-Channel | 18m Ω @ 35A, 10V | 4V @ 250μA | 2900pF @ 25V | 120nC @ 10V | 77ns | 56 ns | 20V | 100V | 2 V | 59A Tc | 240A | 200 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
AUIRF1010EZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 30 | R-PDSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 140W | 19 ns | 2V | 140W Tc | 75A | SWITCHING | 0.0085Ohm | 38 ns | SILICON | N-Channel | 8.5m Ω @ 51A, 10V | 4V @ 250μA | 2810pF @ 25V | 86nC @ 10V | 90ns | 54 ns | 20V | 60V | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||
AUIRF3205ZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 11.3mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 170W | 18 ns | 2V | 170W Tc | 110A | SWITCHING | 0.0065Ohm | 45 ns | SILICON | N-Channel | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 3450pF @ 25V | 110nC @ 10V | 95ns | 67 ns | 20V | 55V | 75A | 75A Tc | 440A | 250 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
AUIRFP2907Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 15.87mm | RoHS Compliant | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-247-3 | No SVHC | 20.7mm | 5.31mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 310W | 19 ns | 2V | 310W Tc | 170A | SWITCHING | 0.0045Ohm | 97 ns | SILICON | N-Channel | 4.5m Ω @ 90A, 10V | 4V @ 250μA | 7500pF @ 25V | 270nC @ 10V | 140ns | 100 ns | 20V | 75V | 170A Tc | 680A | 690 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
AUIRLR024NTRL | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Tape & Reel (TR) | 2015 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 45W Tc | SWITCHING | 0.08Ohm | 55V | SILICON | N-Channel | 65m Ω @ 10A, 10V | 2V @ 250μA | 480pF @ 25V | 15nC @ 5V | 17A | 17A Tc | 55V | 72A | 68 mJ | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
IRF9392TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | No | 8 | 8-SOIC (0.154, 3.90mm Width) | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | Other Transistors | 1 | Single | 2.5W | 15 ns | 2.5W Ta | 9.8A | SWITCHING | 73 ns | SILICON | P-Channel | 12.1m Ω @ 7.8A, 20V | 2.4V @ 25μA | 1270pF @ 25V | 14nC @ 4.5V | 47ns | 58 ns | 25V | -30V | 9.8A Ta | 30V | 10V 20V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
AUIRLR3705Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 8Ohm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 130W | 17 ns | 130W Tc | 42A | SWITCHING | 33 ns | SILICON | N-Channel | 8m Ω @ 42A, 10V | 3V @ 250μA | 2900pF @ 25V | 66nC @ 5V | 150ns | 70 ns | 16V | 55V | 89A | 42A Tc | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||
IRF9332PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2006 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | Other Transistors | 1 | Single | 2.5W | 15 ns | -1.9V | 2.5W Ta | 54 ns | 9.8A | SWITCHING | 73 ns | SILICON | P-Channel | 17.5m Ω @ 9.8A, 10V | 2.4V @ 25μA | 1270pF @ 25V | 41nC @ 10V | 47ns | 58 ns | 20V | -30V | -1.9 V | 9.8A Ta | 30V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
AUIRLR3410 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 39 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 79W | 7.2 ns | 79W Tc | 17A | SWITCHING | 30 ns | SILICON | N-Channel | 105m Ω @ 10A, 10V | 2V @ 250μA | 800pF @ 25V | 34nC @ 5V | 53ns | 26 ns | 16V | 100V | 17A Tc | 60A | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||
AUIRFS4310 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 300W | 26 ns | 2V | 300W Tc | 130A | SWITCHING | 0.007Ohm | 68 ns | SILICON | N-Channel | 7m Ω @ 75A, 10V | 4V @ 250μA | 7670pF @ 50V | 250nC @ 10V | 110ns | 78 ns | 20V | 100V | 2 V | 75A | 75A Tc | 550A | 980 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||
AUIRFZ44VZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 92W | 14 ns | 2V | 92W Tc | 57A | SWITCHING | 35 ns | SILICON | N-Channel | 12m Ω @ 34A, 10V | 4V @ 250μA | 1690pF @ 25V | 65nC @ 10V | 62ns | 38 ns | 20V | 60V | 57A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
AUIRFR4105Z | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2010 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | 24.5MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 48W | 10 ns | 2V | 48W Tc | 30A | SWITCHING | 26 ns | SILICON | N-Channel | 24.5m Ω @ 18A, 10V | 4V @ 250μA | 740pF @ 25V | 27nC @ 10V | 40ns | 24 ns | 20V | 55V | 20A Tc | 29 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
AUIRFR5505 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tube | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | Other Transistors | 1 | TO-252AA | DRAIN | Single | 57W | 12 ns | -2V | 57W Tc | 18A | SWITCHING | 20 ns | SILICON | P-Channel | 110m Ω @ 9.6A, 10V | 4V @ 250μA | 650pF @ 25V | 32nC @ 10V | 28ns | 16 ns | 20V | -55V | 18A Tc | 55V | 64A | 10V | ±20V | |||||||||||||||||||||||||||||||
AUIRFZ48ZS | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tube | 2011 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | 8.6MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 91W | 15 ns | 91W Tc | 61A | SWITCHING | 35 ns | SILICON | N-Channel | 11m Ω @ 37A, 10V | 4V @ 250μA | 1720pF @ 25V | 64nC @ 10V | 69ns | 39 ns | 20V | 55V | 61A Tc | 240A | 10V | ±20V | ||||||||||||||||||||||||||||||||
AUIRLR2905 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Surface Mount, Through Hole | Tube | 2006 | HEXFET® | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 110W | 11 ns | 1V | 110W Tc | 42A | SWITCHING | 26 ns | SILICON | N-Channel | 27m Ω @ 25A, 10V | 2V @ 250μA | 1700pF @ 25V | 48nC @ 5V | 84ns | 15 ns | 16V | 55V | 42A Tc | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||
IRFH5220TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | RoHS Compliant | No | 8 | 8-VQFN Exposed Pad | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 7.2 ns | 3.6W Ta 8.3W Tc | 3.8A | SWITCHING | 0.0999Ohm | 14 ns | SILICON | N-Channel | 99.9m Ω @ 5.8A, 10V | 5V @ 100μA | 1380pF @ 50V | 30nC @ 10V | 4.7ns | 3.4 ns | 20V | 200V | 20A | 3.8A Ta 20A Tc | 47A | 290 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IRFHM4231TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 3.3mm | RoHS Compliant | Lead Free | Tin | No | 8 | 8-PowerTDFN | No SVHC | 900μm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | IRFHM4231 | S-PDSO-N5 | FET General Purpose Power | 1 | DRAIN | Single | 8.7 ns | 1.6V | 2.7W Ta 29W Tc | 22A | SWITCHING | 0.0046Ohm | 25V | 12 ns | SILICON | N-Channel | 3.4m Ω @ 30A, 10V | 2.1V @ 35μA | 1270pF @ 13V | 20nC @ 10V | 28ns | 5.9 ns | 20V | 40A Tc | 25V | 42 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRF7665S2TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Obsolete | 1 (Unlimited) | 2 | EAR99 | 4.826mm | ROHS3 Compliant | No | 3 | DirectFET™ Isometric SB | No SVHC | 508μm | 3.9624mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | R-XBCC-N2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 30W | 3.8 ns | 4V | 2.4W Ta 30W Tc | 14.4A | SWITCHING | 0.062Ohm | 7.1 ns | SILICON | N-Channel | 62m Ω @ 8.9A, 10V | 5V @ 25μA | 515pF @ 25V | 13nC @ 10V | 6.4ns | 3.6 ns | 20V | 100V | 4 V | 4.1A Ta 14.4A Tc | 58A | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRF6725MTRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Obsolete | 1 (Unlimited) | 3 | EAR99 | 6.35mm | ROHS3 Compliant | No | 5 | DirectFET™ Isometric MX | No SVHC | 506μm | 5.05mm | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | BOTTOM | R-XBCC-N3 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W | 16 ns | 1.8V | 2.8W Ta 100W Tc | 170A | SWITCHING | 0.0022Ohm | 19 ns | SILICON | N-Channel | 2.2m Ω @ 28A, 10V | 2.35V @ 100μA | 4700pF @ 15V | 54nC @ 4.5V | 22ns | 13 ns | 20V | 30V | 1.8 V | 28A | 28A Ta 170A Tc | 220A | 190 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFH7110TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 5.85mm | ROHS3 Compliant | No | 8 | 8-TQFN Exposed Pad | No SVHC | 1.17mm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | R-PDSO-F5 | FET General Purpose Power | 1 | DRAIN | Single | 3.6W | 11 ns | 3V | 3.6W Ta 104W Tc | 11A | SWITCHING | 22 ns | SILICON | N-Channel | 13.5m Ω @ 35A, 10V | 4V @ 100μA | 3240pF @ 25V | 87nC @ 10V | 23ns | 18 ns | 20V | 3 V | 50A | 11A Ta 58A Tc | 100V | 240A | 10V | ±20V | |||||||||||||||||||||||||||||||||||
AUIRFS8403 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tube | 2013 | HEXFET® | Discontinued | 1 (Unlimited) | 175°C | -55°C | 10.67mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | 1 | 1 | Single | 99W | 10 ns | 2.6mOhm | D2PAK | 99W Tc | 123A | 26 ns | N-Channel | 3.3mOhm @ 70A, 10V | 3.9V @ 100μA | 3183pF @ 25V | 93nC @ 10V | 77ns | 43 ns | 20V | 3 V | 123A Tc | 40V | 3.183nF | 10V | ±20V | 3.3 mΩ | |||||||||||||||||||||||||||||||||||||||
IRFH4234TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Cut Tape (CT) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | EAR99 | 6mm | RoHS Compliant | Lead Free | Copper, Silver, Tin | No | 5 | 8-PowerTDFN | No SVHC | 900μm | 5mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | FET General Purpose Power | 1 | Single | 3.5W | 7.8 ns | 1.6V | 3.5W Ta 27W Tc | 22A | 8 ns | N-Channel | 4.6m Ω @ 30A | 2.1V @ 25μA | 1011pF @ 13V | 17nC @ 10V | 30ns | 5.3 ns | 20V | 60A | 22A Ta | 25V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPD60R600P6 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Tape & Reel (TR) | 2011 | CoolMOS™ P6 | no | Discontinued | 1 (Unlimited) | 2 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W Tc | SWITCHING | 0.6Ohm | 600V | SILICON | N-Channel | 600m Ω @ 2.4A, 10V | 557pF @ 100V | 12nC @ 10V | 7.3A | 7.3A Tc | 600V | 18A | 133 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IPP60R1K4C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | EAR99 | 10.36mm | RoHS Compliant | Lead Free | 3 | TO-220-3 | 15.95mm | 4.57mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Halogen Free | Single | 8 ns | 600V | 28.4W Tc | 3.2A | 40 ns | N-Channel | 1.4 Ω @ 1.1A, 10V | 3.5V @ 90μA | 200pF @ 100V | 1.1nC @ 10V | 30V | 650V | 3.2A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
BSC046N10NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Cut Tape (CT) | 2005 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 156W | 100V | 156W Tc | 17A | SWITCHING | 0.0046Ohm | SILICON | N-Channel | 4.6m Ω @ 50A, 10V | 3.5V @ 120μA | 4500pF @ 50V | 63nC @ 10V | 14ns | 20V | 100V | 17A Ta 100A Tc | 400A | 350 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFS7434-7PPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2005 | HEXFET®, StrongIRFET™ | Discontinued | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 7 | TO-263-7, D2Pak (6 Leads + Tab) | No SVHC | 4.83mm | 9.65mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | Single | 245W | 23 ns | 3V | 245W Tc | 240A | 107 ns | N-Channel | 1m Ω @ 100A, 10V | 3.9V @ 250μA | 10250pF @ 25V | 315nC @ 10V | 125ns | 85 ns | 20V | 240A Tc | 40V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IRFHM8228TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 4.2mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 11 ns | 1.8V | 2.8W Ta 34W Tc | 19A | SWITCHING | 25V | 13 ns | SILICON | N-Channel | 5.2m Ω @ 20A, 10V | 2.35V @ 25μA | 1667pF @ 10V | 18nC @ 10V | 22ns | 6.2 ns | 20V | 65A | 19A Ta | 25V | 260A | 50 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFHM8235TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 6.2mOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | FLAT | S-PDSO-F5 | 1 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 7.9 ns | 1.8V | 3W Ta 30W Tc | 16A | SWITCHING | 7.5 ns | SILICON | N-Channel | 7.7m Ω @ 20A, 10V | 2.35V @ 25μA | 1040pF @ 10V | 12nC @ 4.5V | 16ns | 5.2 ns | 20V | 25V | 50A | 16A Ta | 240A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
V501445SHPSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
2017 | Obsolete | Not Applicable | Mount |
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