Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Mounting Type | Operating Temperature | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Subcategory | Qualification Status | Max Power Dissipation | Power - Max | Reference Standard | Diode Element Material | Number of Elements | Configuration | Diode Type | Output Current-Max | Application | Number of Phases | JEDEC-95 Code | Polarity | Forward Current | Forward Voltage | Case Connection | Polarity/Channel Type | Max Surge Current | Element Configuration | Power Dissipation | Max Reverse Leakage Current | Input | Speed | Current - Reverse Leakage @ Vr | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction | Max Reverse Voltage (DC) | Average Rectified Current | Peak Reverse Current | Max Repetitive Reverse Voltage (Vrrm) | Peak Non-Repetitive Surge Current | Max Forward Surge Current (Ifsm) | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time | Reverse Voltage | Recovery Time | Max Collector Current | Collector Emitter Breakdown Voltage | Collector Emitter Voltage (VCEO) | Capacitance @ Vr, F | Transistor Application | Transistor Element Material | Rise Time | Input Capacitance | Current - Collector Cutoff (Max) | Collector Emitter Saturation Voltage | Turn On Time | Vce(on) (Max) @ Vge, Ic | Turn Off Time-Nom (toff) | IGBT Type | NTC Thermistor | Gate-Emitter Voltage-Max | Input Capacitance (Cies) @ Vce | Voltage - Collector Emitter Breakdown (Max) | Current - Collector (Ic) (Max) |
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M2035S-E3/4W | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Through Hole | Tube | 2011 | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-3 | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | SINGLE | 3 | R-PSFM-T3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | TO-220AB | 20A | CATHODE | 200A | Common Anode | 200μA | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 35V | 700mV @ 20A | -55°C~150°C | 35V | 20A | 200μA | 35V | 200A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBR745HE3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2011 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-2 | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | MBR745 | 3 | Rectifier Diodes | AEC-Q101 | SILICON | 1 | Schottky | EFFICIENCY | 1 | 7.5A | CATHODE | 150A | Single | 100μA | Fast Recovery =< 500ns, > 200mA (Io) | 100μA @ 45V | 840mV @ 15A | -65°C~175°C | 45V | 7.5A | 100μA | 45V | 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
MBR1645HE3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2016 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-3 | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 260 | 30 | MBR1645 | 3 | Rectifier Diodes | AEC-Q101 | SILICON | 1 | Schottky | EFFICIENCY | 1 | 16A | 630mV | CATHODE | 150A | Single | 200μA | Fast Recovery =< 500ns, > 200mA (Io) | 200μA @ 45V | 630mV @ 16A | -65°C~150°C | 45V | 16A | 200μA | 45V | 150A | ||||||||||||||||||||||||||||||||||||||||||||||||||||
GUR5H60-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | Through Hole | Tube | 2011 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -55°C | ROHS3 Compliant | No | 2 | FREE WHEELING DIODE | TO-220-2 | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | 3 | Rectifier Diodes | SILICON | 1 | Standard | 5A | EFFICIENCY | 1 | 5A | CATHODE | 90A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 20μA @ 600V | 1.8V @ 5A | -55°C~150°C | 600V | 5A | 20μA | 600V | 90A | 30 ns | 600V | 30 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||
SBL1040-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2011 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 125°C | -40°C | 10.54mm | ROHS3 Compliant | Lead Free | No | 2 | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-2 | 15.32mm | 4.7mm | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | SBL1040 | 3 | Rectifier Diodes | SILICON | 1 | Schottky | EFFICIENCY | 1 | 10A | 600mV | CATHODE | 250A | Single | 1mA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 40V | 600mV @ 10A | -40°C~125°C | 40V | 10A | 1mA | 40V | 250A | |||||||||||||||||||||||||||||||||||||||||||||||||||
SBL8L40-E3/45 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2011 | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -40°C | ROHS3 Compliant | FREE WHEELING DIODE, LOW POWER LOSS | TO-220-2 | unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | NOT APPLICABLE | NOT APPLICABLE | 3 | R-PSFM-T2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Schottky | 8A | EFFICIENCY | 1 | TO-220AC | 500mV | CATHODE | 220A | Single | 500μA | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 40V | 500mV @ 8A | -65°C~125°C | 40V | 8A | 250A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
EGP50D-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | Through Hole | Tape & Box (TB) | 2012 | SUPERECTIFIER® | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | Lead Free | No | 20 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DO-201AA, DO-27, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50D | 2 | O-PALF-W2 | Rectifier Diodes | SILICON | 1 | Standard | 5A | EFFICIENCY | 1 | 5A | 950mV | ISOLATED | 150A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 200V | 950mV @ 5A | -65°C~150°C | 200V | 5A | 5μA | 200V | 150A | 50 ns | 200V | 50 ns | 95pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||
EGP30D-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tape & Box (TB) | 2012 | SUPERECTIFIER® | yes | Obsolete | 1 (Unlimited) | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 20 | DO-201AA, DO-27, Axial | Through Hole | 8541.10.00.80 | EGP30D | 2 | Standard | 950mV | 125A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 200V | 950mV @ 3A | -65°C~150°C | 200V | 3A | 5μA | 200V | 125A | 50 ns | 200V | 50 ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
EGP30G-E3/73 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 51 Weeks | Through Hole | Tape & Box (TB) | 2012 | SUPERECTIFIER® | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 20 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DO-201AA, DO-27, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30G | 2 | O-PALF-W2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | EFFICIENCY | 1 | ISOLATED | 125A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 400V | 1.25V @ 3A | -65°C~150°C | 400V | 3A | 5μA | 400V | 125A | 50 ns | 400V | 50 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
1N4942GPHE3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tape & Reel (TR) | 2008 | SUPERECTIFIER® | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-204AL, DO-41, Axial | unknown | Through Hole | 8541.10.00.80 | e3 | WIRE | NOT SPECIFIED | NOT SPECIFIED | 1N4942 | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | ISOLATED | 25A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 1μA @ 200V | 1.3V @ 1A | -65°C~175°C | 200V | 1A | 1μA | 200V | 25A | 150 ns | 200V | 150 ns | 15pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||
EGP30B-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tape & Reel (TR) | 2012 | SUPERECTIFIER® | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 20 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DO-201AA, DO-27, Axial | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP30B | 2 | O-PALF-W2 | Rectifier Diodes | SILICON | 1 | Standard | 3A | EFFICIENCY | 1 | 950mV | ISOLATED | 125A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 100V | 950mV @ 3A | -65°C~150°C | 100V | 3A | 5μA | 100V | 125A | 50 ns | 100V | 50 ns | ||||||||||||||||||||||||||||||||||||||||||||||||||
EGP50F-E3/54 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tape & Reel (TR) | 2016 | SUPERECTIFIER® | yes | Obsolete | 1 (Unlimited) | 2 | EAR99 | 150°C | -65°C | ROHS3 Compliant | No | 20 | FREE WHEELING DIODE, LOW LEAKAGE CURRENT | DO-201AA, DO-27, Axial | Unknown | Through Hole | 8541.10.00.80 | e3 | Matte Tin (Sn) | WIRE | EGP50F | 2 | O-PALF-W2 | Rectifier Diodes | SILICON | 1 | Standard | 5A | EFFICIENCY | 1 | 5A | 1.6V | ISOLATED | 150A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 300V | 1.25V @ 5A | -65°C~150°C | 300V | 5A | 5μA | 300V | 150A | 50A | 50 ns | 300V | 50 ns | 75pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||
BYM11-1000HE3/97 | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | SUPERECTIFIER® | yes | Discontinued | 1 (Unlimited) | 2 | EAR99 | 175°C | -65°C | ROHS3 Compliant | Tin | 2 | FREE WHEELING DIODE, HIGH RELIABILITY | DO-213AB, MELF (Glass) | unknown | Surface Mount | 8541.10.00.80 | e3 | END | WRAP AROUND | NOT SPECIFIED | NOT SPECIFIED | BYM11-1000 | 2 | Rectifier Diodes | Not Qualified | SILICON | 1 | Standard | 1A | 1A | ISOLATED | 30A | Single | Fast Recovery =< 500ns, > 200mA (Io) | 5μA @ 1000V | 1.3V @ 1A | -65°C~175°C | 1kV | 1A | 5μA | 1kV | 30A | 1000V | 500 ns | 1kV | 500 ns | 15pF @ 4V 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||
VS-GA100TS60SFPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 2012 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | INT-A-Pak | Unknown | Chassis Mount | -40°C~150°C TJ | 780W | 780W | Half Bridge | NPN | Dual | Standard | 220A | 600V | 600V | 16.25nF | 1mA | 1.39V | 1.28V @ 15V, 100A | PT | No | 16.25nF @ 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GA200SA60SP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 2000 | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | 4 | UL APPROVED | SOT-227-4, miniBLOC | Unknown | Chassis Mount | -55°C~150°C TJ | UPPER | UNSPECIFIED | 630W | 781W | 1 | Single | ISOLATED | N-CHANNEL | 630W | Standard | 342A | 600V | 600V | POWER CONTROL | SILICON | 60ns | 16.25nF | 1mA | 1.1V | 132 ns | 1.3V @ 15V, 100A | 2160 ns | No | 16.25nF @ 30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GA200TH60S | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | -40°C~150°C TJ | Nickel (Ni) | Insulated Gate BIP Transistors | 1.042kW | 1042W | 1 | Half Bridge | Standard | 260A | 600V | 1.9V | 13.1nF | 5μA | 1.9V @ 15V, 200A (Typ) | No | 20V | 13.1nF @ 25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GA100NA60UP | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 2013 | Obsolete | 1 (Unlimited) | 4 | EAR99 | ROHS3 Compliant | UL RECOGNIZED | SOT-227-4, miniBLOC | Chassis Mount | -55°C~150°C TJ | UPPER | UNSPECIFIED | 4 | NO | R-PUFM-X4 | 250W | 1 | Single | ISOLATED | N-CHANNEL | Standard | POWER CONTROL | SILICON | 250μA | 137 ns | 2.1V @ 15V, 50A | 550 ns | No | 7.4nF @ 30V | 600V | 100A | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB100TS60NPBF | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 2016 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | INT-A-Pak | Unknown | Chassis Mount | -40°C~150°C TJ | 390W | 390W | Half Bridge | NPN | Dual | Standard | 108A | 600V | 600V | 100μA | 2.6V | 2.85V @ 15V, 100A | NPT | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB200TH120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | 150°C TJ | Nickel (Ni) | Insulated Gate BIP Transistors | 1.136kW | 1136W | 1 | Half Bridge | Standard | 360A | 1.2kV | 2.35V | 14.9nF | 5mA | 2.35V @ 15V, 200A | No | 20V | 14.9nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB100TP120U | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | INT-A-Pak | Chassis Mount | NICKEL (197) | 735W | 735W | Half Bridge | Standard | 150A | 1.2kV | 3.9V | 4.3nF | 2mA | 3.9V @ 15V, 100A | No | 4.3nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB100TH120U | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | -40°C~150°C TJ | Nickel (Ni) | Insulated Gate BIP Transistors | 1.136kW | 1136W | 1 | Half Bridge | Standard | 200A | 1.2kV | 3.6V | 8.45nF | 5mA | 3.6V @ 15V, 100A | NPT | No | 20V | 8.45nF @ 20V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-EMG050J60N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount | 2012 | Obsolete | 1 (Unlimited) | 17 | EAR99 | ROHS3 Compliant | No | 17 | EMIPAK2 | Unknown | Chassis Mount | 150°C TJ | UPPER | PIN/PEG | 17 | 338W | 338W | 2 | Half Bridge | NPN | ISOLATED | Standard | 88A | 600V | 2.1V | POWER CONTROL | SILICON | 9.5nF | 100μA | 2.2V | 227 ns | 2.1V @ 15V, 50A | 302 ns | Yes | 9.5nF @ 30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB100TH120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Chassis Mount | 2015 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | 150°C TJ | Insulated Gate BIP Transistors | 833W | 833W | 1 | Half Bridge | Standard | 200A | 1.2kV | 2.35V | 8.58nF | 5mA | 2.35V @ 15V, 100A | No | 20V | 8.58nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB50LP120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | INT-A-PAK (3 + 4) | Chassis Mount | -40°C~150°C TJ | Nickel (Ni) | Insulated Gate BIP Transistors | 446W | 446W | 1 | Single | Standard | 100A | 1.2kV | 1.7V | 4.29nF | 1mA | 1.7V @ 15V, 50A (Typ) | No | 20V | 4.29nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB100TP120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Chassis Mount | 2015 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | INT-A-Pak | Chassis Mount | 150°C TJ | 650W | 650W | Half Bridge | Standard | 200A | 1.2kV | 2.2V | 7.43nF | 5mA | 2.2V @ 15V, 100A | No | 7.43nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB300NH120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Chassis Mount | 2015 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | 150°C TJ | 1.645kW | 1645W | Single | Standard | 500A | 1.2kV | 2.45V | 21.2nF | 5mA | 2.45V @ 15V, 300A | No | 21.2nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB400AH120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Chassis Mount | 2015 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (5) | Chassis Mount | -40°C~150°C TJ | Nickel (Ni) | Insulated Gate BIP Transistors | 2.5kW | 2500W | 1 | Single | Standard | 650A | 1.2kV | 1.9V | 30nF | 5mA | 1.9V @ 15V, 400A (Typ) | No | 20V | 30nF @ 25V | 1200V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB150LH120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Chassis Mount | 2016 | yes | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | -40°C~150°C TJ | Nickel (Ni) | 1.389kW | 1389W | Single | Standard | 300A | 1.2kV | 1.87V | 10.6nF | 1mA | 1.87V @ 15V, 150A (Typ) | No | 10.6nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB400TH120N | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | Chassis Mount | 2015 | Obsolete | 1 (Unlimited) | EAR99 | ROHS3 Compliant | Double INT-A-PAK (3 + 4) | Chassis Mount | -40°C~150°C TJ | 2.604kW | 2604W | Half Bridge | Standard | 800A | 1.2kV | 1.9V | 32.7nF | 5mA | 1.9V @ 15V, 400A (Typ) | No | 32.7nF @ 25V | 1200V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
VS-GB50LA120UX | Vishay Semiconductor Diodes Division | $0.00 |
Min: 1 Mult: 1 |
download | Chassis Mount, Screw | 2000 | Obsolete | 1 (Unlimited) | EAR99 | 38.3mm | ROHS3 Compliant | 4 | SOT-227-4, miniBLOC | Unknown | 12.3mm | 25.7mm | Chassis Mount | -40°C~150°C TJ | 431W | 431W | Single | Standard | 84A | 1.2kV | 1.2kV | 50μA | 3.22V | 2.8V @ 15V, 50A | NPT | No | 1200V |
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