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RF/IF & RFID
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ON Semiconductor(36350)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Power Dissipation-Max | Continuous Drain Current (ID) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| FQP2N90 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | Tin | 2.2A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 7.2MOhm | Through Hole | 1.8g | -55°C~150°C TJ | 900V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 85W | 15 ns | 5V | 85W Tc | 2.2A | SWITCHING | 20 ns | SILICON | N-Channel | 7.2 Ω @ 1.1A, 10V | 5V @ 250μA | 500pF @ 25V | 15nC @ 10V | 35ns | 30 ns | 30V | 900V | 2.2A Tc | 8.8A | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FDPF770N15A | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2013 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | No | 3 | ULTRA-LOW RESISTANCE | TO-220-3 Full Pack | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 20W | 12 ns | 21W Tc | 10A | SWITCHING | 0.077Ohm | 15 ns | SILICON | N-Channel | 77m Ω @ 10A, 10V | 4V @ 250μA | 765pF @ 75V | 11.2nC @ 10V | 8ns | 3 ns | 20V | 150V | 10A Tc | 40A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQPF30N06L | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 day ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | 22.5A | No | 3 | TO-220-3 Full Pack | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | ISOLATED | Single | 38W | 15 ns | 38W Tc | 22.5A | SWITCHING | 0.045Ohm | 60 ns | SILICON | N-Channel | 35m Ω @ 11.3A, 10V | 2.5V @ 250μA | 1040pF @ 25V | 20nC @ 5V | 210ns | 110 ns | 20V | 60V | 22.5A Tc | 90A | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQP9N30 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 9A | No | 3 | TO-220-3 | Through Hole | 1.8g | -55°C~150°C TJ | 300V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 98W | 16 ns | 98W Tc | 9A | SWITCHING | 0.45Ohm | 27 ns | SILICON | N-Channel | 450m Ω @ 4.5A, 10V | 5V @ 250μA | 750pF @ 25V | 22nC @ 10V | 120ns | 48 ns | 30V | 300V | 9A | 9A Tc | 420 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FQP16N25 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 16A | 3 | TO-220-3 | 16.3mm | 4.7mm | Through Hole | 1.8g | -55°C~150°C TJ | 250V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 50W | 17 ns | 142W Tc | 16A | SWITCHING | 45 ns | SILICON | N-Channel | 230m Ω @ 8A, 10V | 5V @ 250μA | 1200pF @ 25V | 35nC @ 10V | 140ns | 75 ns | 30V | 250V | 16A Tc | 64A | 560 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FDP10N60NZ | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2010 | UniFET-II™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | No | 3 | TO-220-3 | No SVHC | 16.07mm | 4.9mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 185W | 25 ns | 3V | 185W Tc | 10A | SWITCHING | 0.75Ohm | 70 ns | SILICON | N-Channel | 750m Ω @ 5A, 10V | 5V @ 250μA | 1475pF @ 25V | 30nC @ 10V | 50ns | 50 ns | 25V | 600V | 10A Tc | 40A | 550 mJ | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| HUF76407D3ST | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | Tape & Reel (TR) | yes | Active | 1 (Unlimited) | 2 | EAR99 | 175°C | -55°C | ROHS3 Compliant | Lead Free | 11A | No | 3 | TO-252-3 | No SVHC | 92mOhm | 260.37mg | 60V | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | FET General Purpose Power | 38W | 1 | TO-252AA | DRAIN | N-CHANNEL | Single | 38W | 5 ns | 1V | 77mOhm | 12A | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 43 ns | 32ns | 45 ns | 16V | 60V | 60V | 350pF | 92 mΩ | |||||||||||||||||||||||||||||||||||||||||
| FDS6570A | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | PowerTrench® | yes | Active | 1 (Unlimited) | 8 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Tin | 15A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.5mm | 4mm | Surface Mount | 130mg | -55°C~150°C TJ | 20V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | FET General Purpose Power | 1 | Single | 2.5W | 20 ns | 2.5W Ta | 15A | SWITCHING | 0.0075Ohm | 95 ns | SILICON | N-Channel | 7.5m Ω @ 15A, 4.5V | 1.5V @ 250μA | 4700pF @ 10V | 66nC @ 5V | 27ns | 35 ns | 8V | 20V | 900 mV | 15A Ta | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| FQA28N15 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | 33A | No | 3 | FAST SWITCHING | TO-3P-3, SC-65-3 | No SVHC | 20.1mm | 5mm | 90MOhm | Through Hole | 6.401g | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | Single | 227W | 17 ns | 4V | 227W Tc | 33A | SWITCHING | 100 ns | SILICON | N-Channel | 90m Ω @ 16.5A, 10V | 4V @ 250μA | 1600pF @ 25V | 52nC @ 10V | 180ns | 115 ns | 25V | 150V | 33A Tc | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| FDMS8320LDC | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
15 Weeks | ACTIVE (Last Updated: 1 week ago) | Surface Mount | Tape & Reel (TR) | 2017 | Dual Cool™, PowerTrench® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 5.1mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | 1.05mm | 5.85mm | Surface Mount | 90mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FLAT | R-PDSO-F5 | FET General Purpose Power | 1 | MO-240AA | DRAIN | Single | 3.2W | 19 ns | 3.2W Ta 125W Tc | 44A | SWITCHING | 40V | 69 ns | SILICON | N-Channel | 1.1m Ω @ 44A, 10V | 3V @ 250μA | 11635pF @ 20V | 170nC @ 10V | 15ns | 14 ns | 20V | 44A Ta 130A Tc | 40V | 300A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQA9P25 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | -10.5A | No | 3 | TO-3P-3, SC-65-3 | 20.1mm | 5mm | 620MOhm | Through Hole | 6.401g | -55°C~150°C TJ | -250V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | 1 | Other Transistors | 1 | Single | 150W | 20 ns | 150W Tc | 10.5A | SWITCHING | 45 ns | SILICON | P-Channel | 620m Ω @ 5.25A, 10V | 5V @ 250μA | 1180pF @ 25V | 38nC @ 10V | 150ns | 65 ns | 30V | -250V | 10.5A Tc | 250V | 42A | 650 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FDPF16N50 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2004 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | Tin | 3 | TO-220-3 Full Pack | No SVHC | not_compliant | 15.87mm | 4.7mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | ISOLATED | Single | 38.5W | 40 ns | 5V | 38.5W Tc | 16A | SWITCHING | 65 ns | SILICON | N-Channel | 380m Ω @ 8A, 10V | 5V @ 250μA | 1945pF @ 25V | 45nC @ 10V | 150ns | 80 ns | 30V | 500V | 16A Tc | 64A | 780 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FDB088N08 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 4 days ago) | Surface Mount | Tape & Reel (TR) | 2004 | PowerTrench® | yes | Active | 1 (Unlimited) | 2 | EAR99 | 10.67mm | ROHS3 Compliant | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 11.33mm | Surface Mount | 1.31247g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 160W | 45 ns | 2V | 160W Tc | 120A | SWITCHING | 0.0088Ohm | 244 ns | SILICON | N-Channel | 8.8m Ω @ 75A, 10V | 4V @ 250μA | 6595pF @ 25V | 118nC @ 10V | 158ns | 102 ns | 20V | 75V | 85A | 120A Tc | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FQPF3N80C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 3A | No | 3 | TO-220-3 Full Pack | No SVHC | 9.19mm | 4.7mm | Through Hole | 2.27g | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 39W | 15 ns | 5V | 39W Tc | 3A | SWITCHING | 22.5 ns | SILICON | N-Channel | 4.8 Ω @ 1.5A, 10V | 5V @ 250μA | 705pF @ 25V | 16.5nC @ 10V | 43.5ns | 32 ns | 30V | 800V | 3A | 3A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| FQP6N40C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | Tin | 6A | 3 | TO-220-3 | 9.4mm | 4.7mm | Through Hole | 1.8g | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 73W | 13 ns | 73W Tc | 6A | SWITCHING | 1Ohm | 21 ns | SILICON | N-Channel | 1 Ω @ 3A, 10V | 4V @ 250μA | 625pF @ 25V | 20nC @ 10V | 65ns | 38 ns | 30V | 400V | 6A | 6A Tc | 24A | 270 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FDPF18N20FT | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 4 days ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 41W | 16 ns | 41W Tc | 18A | SWITCHING | 50 ns | SILICON | N-Channel | 140m Ω @ 9A, 10V | 5V @ 250μA | 1180pF @ 25V | 26nC @ 10V | 50ns | 40 ns | 30V | 200V | 18A Tc | 72A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| FCP600N60Z | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2010 | SuperFET® II | yes | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | 16.51mm | 4.83mm | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | 1 | Single | 89W | 13 ns | 89W Tc | 7.4A | 88 ns | N-Channel | 600m Ω @ 3.7A, 10V | 3.5V @ 250μA | 1120pF @ 25V | 26nC @ 10V | 24ns | 28 ns | 20V | 650V | 7.4A Tc | 600V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FQP5N60C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 4.5A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 2.5Ohm | Through Hole | 1.8g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 100W | 10 ns | 4V | 100W Tc | 4.5A | SWITCHING | 38 ns | SILICON | N-Channel | 2.5 Ω @ 2.25A, 10V | 4V @ 250μA | 670pF @ 25V | 19nC @ 10V | 42ns | 46 ns | 30V | 600V | 4.5A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| FDPF8N60ZUT | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 21 hours ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | No | 3 | TO-220-3 Full Pack | No SVHC | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 34.5W | 20 ns | 5V | 34.5W Tc | 6.5A | SWITCHING | 55 ns | SILICON | N-Channel | 1.35 Ω @ 3.25A, 10V | 5V @ 250μA | 1265pF @ 25V | 26nC @ 10V | 30ns | 35 ns | 30V | 600V | 6.5A Tc | 26A | 420 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| FQP8N60C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | ACTIVE, NOT REC (Last Updated: 3 days ago) | Through Hole | Tube | 2004 | QFET® | yes | Not For New Designs | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 7.5A | 3 | FAST SWITCHING | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 1.2Ohm | Through Hole | 1.8g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | Not Qualified | 1 | TO-220AB | Single | 147W | 16.5 ns | 4V | 147W Tc | 7.5A | SWITCHING | 81 ns | SILICON | N-Channel | 1.2 Ω @ 3.75A, 10V | 4V @ 250μA | 1255pF @ 25V | 36nC @ 10V | 60.5ns | 64.5 ns | 30V | 600V | 600V | 4 V | 7.5A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||
| FQP70N10 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 57A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 23MOhm | Through Hole | 1.8g | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 160W | 30 ns | 4V | 160W Tc | 57A | SWITCHING | 130 ns | SILICON | N-Channel | 23m Ω @ 28.5A, 10V | 4V @ 250μA | 3300pF @ 25V | 110nC @ 10V | 470ns | 160 ns | 25V | 100V | 57A Tc | 228A | 10V | ±25V | ||||||||||||||||||||||||||||||||
| FQP14N30 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 11 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 14.4A | 3 | TO-220-3 | 9.4mm | 4.7mm | Through Hole | 1.8g | -55°C~150°C TJ | 300V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 147W | 22 ns | 147W Tc | 14.4A | SWITCHING | 0.29Ohm | 45 ns | SILICON | N-Channel | 290m Ω @ 7.2A, 10V | 5V @ 250μA | 1360pF @ 25V | 40nC @ 10V | 145ns | 70 ns | 30V | 300V | 14.4A Tc | 57.6A | 600 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||
| FDPF8N50NZ | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 20 hours ago) | Through Hole | Tube | 2013 | UniFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | not_compliant | 15.87mm | 4.7mm | Through Hole | 2.27g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | ISOLATED | Single | 40.3W | 17 ns | 40.3W Tc | 8A | SWITCHING | 0.85Ohm | 43 ns | SILICON | N-Channel | 850m Ω @ 4A, 10V | 5V @ 250μA | 735pF @ 25V | 18nC @ 10V | 34ns | 27 ns | 25V | 500V | 8A | 8A Tc | 10V | ±25V | ||||||||||||||||||||||||||||||||||
| NTP6412ANG | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | Tube | 2009 | yes | Active | 1 (Unlimited) | 3 | 10.28mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-220-3 | No SVHC | 15.75mm | 4.82mm | 18.2MOhm | Through Hole | 4.535924g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | 3 | NO | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 167W | 16 ns | 4V | 167W Tc | 58A | 70 ns | SILICON | N-Channel | 18.2m Ω @ 58A, 10V | 4V @ 250μA | 3500pF @ 25V | 100nC @ 10V | 140ns | 126 ns | 20V | 100V | 4 V | 58A Tc | 240A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQP4N90C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 9.9mm | ROHS3 Compliant | Lead Free | Tin | 4A | 3 | TO-220-3 | No SVHC | 9.2mm | 4.5mm | Through Hole | 1.8g | -55°C~150°C TJ | 900V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 140W | 25 ns | 5V | 140W Tc | 4A | SWITCHING | 40 ns | SILICON | N-Channel | 4.2 Ω @ 2A, 10V | 5V @ 250μA | 960pF @ 25V | 22nC @ 10V | 50ns | 35 ns | 30V | 900V | 4A | 4A Tc | 570 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FDPF085N10A | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2013 | PowerTrench® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.36mm | ROHS3 Compliant | Lead Free | No | 3 | ULTRA-LOW RESISTANCE | TO-220-3 Full Pack | 16.07mm | 4.9mm | Through Hole | 2.27g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 33.3W | 18 ns | 33.3W Tc | 40A | SWITCHING | 0.0085Ohm | 29 ns | SILICON | N-Channel | 8.5m Ω @ 40A, 10V | 4V @ 250μA | 2695pF @ 50V | 40nC @ 10V | 22ns | 8 ns | 20V | 100V | 40A Tc | 269 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FCP650N80Z | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | SuperFET® II | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 3 | TO-220-3 | No SVHC | Through Hole | 1.8g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 8541.29.00.95 | NOT SPECIFIED | NOT SPECIFIED | Single | 4.5V | 162W Tc | 10A | N-Channel | 650m Ω @ 4A, 10V | 4.5V @ 800μA | 1565pF @ 100V | 35nC @ 10V | 10A Tc | 800V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF6N80C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 10 hours ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 5.5A | No | 3 | TO-220-3 Full Pack | No SVHC | 9.19mm | 4.7mm | 2.5Ohm | Through Hole | 2.27g | -55°C~150°C TJ | 800V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | ISOLATED | Single | 51W | 26 ns | 5V | 51W Tc | 5.5A | SWITCHING | 47 ns | SILICON | N-Channel | 2.5 Ω @ 2.75A, 10V | 5V @ 250μA | 1310pF @ 25V | 30nC @ 10V | 65ns | 44 ns | 30V | 800V | 5.5A Tc | 22A | 680 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||
| HUF75339P3 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2002 | UltraFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 75A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.83mm | 12mOhm | Through Hole | 1.8g | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 200W | 15 ns | 4V | 200W Tc | 75A | SWITCHING | 20 ns | SILICON | N-Channel | 12m Ω @ 75A, 10V | 4V @ 250μA | 2000pF @ 25V | 130nC @ 20V | 60ns | 25 ns | 20V | 55V | 75A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||
| NTD4909NT4G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 1 day ago) | Tape & Reel (TR) | 2007 | yes | Active | 1 (Unlimited) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | No | 4 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.38mm | 6.22mm | 12MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | 260 | 40 | 4 | YES | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 1.37W | 11 ns | 1.37W Ta 29.4W Tc | 12.1A | SWITCHING | 21 ns | SILICON | N-Channel | 8m Ω @ 30A, 10V | 2.2V @ 250μA | 1314pF @ 15V | 17.5nC @ 10V | 20V | 30V | 8.8A | 8.8A Ta 41A Tc | 28 mJ | 4.5V 10V | ±20V |