Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Lifecycle Status | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Max Operating Temperature | Min Operating Temperature | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Max Power Dissipation | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Polarity/Channel Type | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Drain to Source Resistance | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | FET Technology | Turn-Off Delay Time | Quiescent Current | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Input Capacitance | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Rds On Max |
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FQD6N50CTM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | Surface Mount | Tape & Reel (TR) | QFET® | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | 4.5A | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | 260.37mg | -55°C~150°C TJ | 500V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 10 ns | 2.5W Ta 61W Tc | 4.5A | SWITCHING | 55 ns | SILICON | N-Channel | 1.2 Ω @ 2.25A, 10V | 4V @ 250μA | 700pF @ 25V | 25nC @ 10V | 35ns | 45 ns | 30V | 500V | 4.5A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
FDMC8321LDC | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | ACTIVE (Last Updated: 1 week ago) | Surface Mount | Tape & Reel (TR) | PowerTrench® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 8 | 8-PowerTDFN | not_compliant | Surface Mount | 32.13mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 260 | NOT SPECIFIED | 2.9W Ta 56W Tc | 108A | N-Channel | 2.5m Ω @ 27A, 10V | 3V @ 250μA | 3965pF @ 20V | 60nC @ 10V | 27A Ta 108A Tc | 40V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDB12N50FTM-WS | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | UniFET™ | yes | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | No | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 700MOhm | Surface Mount | 1.31247g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | Single | 165W | 21 ns | 165W Tc | 11.5A | 50 ns | N-Channel | 700m Ω @ 6A, 10V | 5V @ 250μA | 1395pF @ 25V | 30nC @ 10V | 45ns | 35 ns | 30V | 500V | 11.5A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
FQU2N100TU | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | ACTIVE (Last Updated: 5 days ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.8mm | ROHS3 Compliant | Lead Free | Tin | 1.6A | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | 7.57mm | 2.5mm | Through Hole | 343.08mg | -55°C~150°C TJ | 1kV | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FET General Purpose Power | 1 | Single | 2.5W | 13 ns | 2.5W Ta 50W Tc | 1.6A | SWITCHING | 9Ohm | 25 ns | SILICON | N-Channel | 9 Ω @ 800mA, 10V | 5V @ 250μA | 520pF @ 25V | 15.5nC @ 10V | 30ns | 35 ns | 30V | 1kV | 1.6A Tc | 1000V | 6.4A | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
FDMC010N08C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 20 Weeks | ACTIVE (Last Updated: 20 hours ago) | Tape & Reel (TR) | 2016 | PowerTrench® | yes | Active | 1 (Unlimited) | RoHS Compliant | 8-PowerWDFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 2.4W Ta 52W Tc | N-Channel | 10m Ω @ 16A, 10V | 4V @ 90μA | 1500pF @ 40V | 22nC @ 10V | 11A Ta 51A Tc | 80V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FCMT180N65S3 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | ACTIVE (Last Updated: 3 days ago) | Tape & Reel (TR) | SuperFET® III | yes | Active | 1 (Unlimited) | RoHS Compliant | 4-PowerTSFN | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | 139W Tc | N-Channel | 180m Ω @ 8.5A, 10V | 4.5V @ 1.8mA | 1350pF @ 400V | 33nC @ 10V | 17A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FCMT299N60 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 33 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | SuperFET® II | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 4 | 4-PowerTSFN | not_compliant | 199mOhm | Surface Mount | 449.03225mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | 260 | NOT SPECIFIED | 1 | FET General Purpose Power | Single | 19 ns | 125W Tc | 12A | 51 ns | N-Channel | 299m Ω @ 6A, 10V | 3.5V @ 250μA | 1948pF @ 380V | 51nC @ 10V | 9ns | 7 ns | 20V | 600V | 12A Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMS5672 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | ACTIVE (Last Updated: 3 days ago) | Surface Mount | Tape & Reel (TR) | 2006 | UltraFET™ | yes | Active | 1 (Unlimited) | 8 | SMD/SMT | EAR99 | 5mm | ROHS3 Compliant | Lead Free | Gold | 22A | 8 | 8-PowerWDFN | No SVHC | 750μm | 6mm | 11.5MOhm | Surface Mount | 231mg | -55°C~150°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e4 | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | Single | 2.5W | 16 ns | 3.2V | 2.5W Ta 78W Tc | 10.6A | 22 ns | SILICON | N-Channel | 11.5m Ω @ 10.6A, 10V | 4V @ 250μA | 2800pF @ 30V | 45nC @ 10V | 17ns | 8 ns | 20V | 60V | 60V | 3.2 V | 10.6A Ta 22A Tc | 60A | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||
FDB9406-F085 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 1 week ago) | Surface Mount | Cut Tape (CT) | Automotive, AEC-Q101, PowerTrench® | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | No | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | 1.31247g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | R-PSSO-G2 | FET General Purpose Power | 1 | DRAIN | Single | 176W | 28 ns | 176W Tj | 110A | SWITCHING | 50 ns | SILICON | N-Channel | 1.8m Ω @ 80A, 10V | 4V @ 250μA | 7710pF @ 25V | 138nC @ 10V | 48ns | 20 ns | 20V | 40V | 110A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
FCPF7N60 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2008 | SuperFET™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.16mm | ROHS3 Compliant | Lead Free | 7A | 3 | TO-220-3 Full Pack | No SVHC | not_compliant | 9.19mm | 4.7mm | 600MOhm | Through Hole | 2.27g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | ISOLATED | Single | 31W | 35 ns | 5V | 31W Tc | 7A | SWITCHING | 75 ns | SILICON | N-Channel | 600m Ω @ 3.5A, 10V | 5V @ 250μA | 920pF @ 25V | 30nC @ 10V | 55ns | 32 ns | 30V | 600V | 7A | 7A Tc | 10V | ±30V | |||||||||||||||||||||||||||||||||
FCU360N65S3R0 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | ACTIVE (Last Updated: 4 days ago) | Tube | yes | Active | 1 (Unlimited) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | Through Hole | NOT SPECIFIED | NOT SPECIFIED | 310mOhm | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDB86363-F085 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 9 hours ago) | Surface Mount | Tape & Reel (TR) | Automotive, AEC-Q101, PowerTrench® | yes | Active | 1 (Unlimited) | 2 | ROHS3 Compliant | Lead Free | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | 1.31247g | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | 260 | NOT SPECIFIED | R-PSSO-G2 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 38 ns | 300W Tc | 110A | SWITCHING | 0.0024Ohm | 64 ns | SILICON | N-Channel | 2.4m Ω @ 80A, 10V | 4V @ 250μA | 10000pF @ 40V | 150nC @ 10V | 129ns | 40 ns | 20V | 80V | 110A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
FDA16N50LDTU | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | TO-3P-3, SC-65-3 (Formed Leads) | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | 8541.29.00.95 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Single | 205W Tc | N-Channel | 380m Ω @ 8.3A, 10V | 5V @ 250μA | 1945pF @ 25V | 45nC @ 10V | 16.5A | 16.5A Tc | 500V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FQP9N90C | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 5 days ago) | Through Hole | Tube | 2003 | QFET® | yes | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 8A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 1.4Ohm | Through Hole | 1.8g | -55°C~150°C TJ | 900V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 205W | 50 ns | 5V | 205W Tc | 8A | SWITCHING | 100 ns | SILICON | N-Channel | 1.4 Ω @ 4A, 10V | 5V @ 250μA | 2730pF @ 25V | 58nC @ 10V | 120ns | 75 ns | 30V | 900V | 900V | 5 V | 8A | 8A Tc | 900 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||
FDMC8360LET40 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 19 Weeks | ACTIVE (Last Updated: 1 week ago) | Surface Mount | Tape & Reel (TR) | PowerTrench® | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 8-PowerWDFN | not_compliant | Surface Mount | 152.7mg | -55°C~175°C TJ | MOSFET (Metal Oxide) | 8541.29.00.95 | e3 | Tin (Sn) | 260 | NOT SPECIFIED | Single | 2.8W Ta 75W Tc | 141A | N-Channel | 2.1m Ω @ 27A, 10V | 3V @ 250μA | 5300pF @ 20V | 80nC @ 10V | 27A Ta 141A Tc | 40V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMS3500 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Surface Mount | Tape & Reel (TR) | 2009 | PowerTrench® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 5mm | ROHS3 Compliant | Lead Free | No | 8 | 8-PowerTDFN | No SVHC | 1.05mm | 6mm | 14.5MOhm | Surface Mount | 68.1mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | R-PDSO-N5 | FET General Purpose Power | 1 | DRAIN | Single | 2.5W | 16 ns | 2.5W Ta 96W Tc | 9.2A | SWITCHING | 48 ns | SILICON | N-Channel | 14.5m Ω @ 11.5A, 10V | 3V @ 250μA | 4765pF @ 40V | 91nC @ 10V | 9ns | 6 ns | 20V | 75V | 1.8 V | 49A | 9.2A Ta 49A Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
FDB8447L | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 1 day ago) | Surface Mount | Tape & Reel (TR) | 2006 | PowerTrench® | yes | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | No SVHC | 4.83mm | 11.33mm | 8.5MOhm | Surface Mount | 1.31247g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | GULL WING | FET General Purpose Power | 1 | DRAIN | Single | 60W | 11 ns | 1.9V | 3.1W Ta 60W Tc | 50A | SWITCHING | 28 ns | SILICON | N-Channel | 8.5m Ω @ 14A, 10V | 3V @ 250μA | 2620pF @ 20V | 52nC @ 10V | 6ns | 4 ns | 20V | 40V | 40V | 1.9 V | 15A Ta 50A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
NTMFS4897NFT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 2 Weeks | ACTIVE (Last Updated: 2 days ago) | Tape & Reel (TR) | 2007 | yes | Active | 1 (Unlimited) | 5 | EAR99 | 5.1mm | ROHS3 Compliant | Lead Free | No | 5 | 8-PowerTDFN, 5 Leads | No SVHC | 1.1mm | 6.1mm | 2MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | 5 | YES | FET General Purpose Power | 1 | DRAIN | Single | 96.2W | 26 ns | 2V | 950mW Ta 96.2W Tc | 17A | SWITCHING | 36 ns | SILICON | N-Channel | 2m Ω @ 22A, 10V | 2.5V @ 1mA | 5660pF @ 15V | 83.6nC @ 10V | 24ns | 13 ns | 20V | 30V | 17A Ta 171A Tc | 288A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
FQU5N40TU | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 6.6mm | ROHS3 Compliant | Lead Free | 3.4A | No | 3 | TO-251-3 Short Leads, IPak, TO-251AA | 6.1mm | 2.3mm | Through Hole | 343.08mg | -55°C~150°C TJ | 400V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | Single | 2.5W | 12 ns | 2.5W Ta 45W Tc | 3.4A | SWITCHING | 20 ns | SILICON | N-Channel | 1.6 Ω @ 1.7A, 10V | 5V @ 250μA | 460pF @ 25V | 13nC @ 10V | 60ns | 30 ns | 30V | 400V | 3.4A Tc | 290 mJ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
FQP65N06 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2001 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 65A | No | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 16mOhm | Through Hole | 1.8g | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | TO-220AB | Single | 150W | 20 ns | 150W Tc | 65A | SWITCHING | 90 ns | SILICON | N-Channel | 16m Ω @ 32.5A, 10V | 4V @ 250μA | 2410pF @ 25V | 65nC @ 10V | 160ns | 105 ns | 25V | 60V | 60V | 4 V | 65A Tc | 260A | 650 mJ | 10V | ±25V | |||||||||||||||||||||||||||||||||||
FDMS86350 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | ACTIVE (Last Updated: 2 days ago) | Surface Mount | Tape & Reel (TR) | 2017 | PowerTrench® | yes | Active | 1 (Unlimited) | 5 | EAR99 | 5.1mm | ROHS3 Compliant | No | 8 | 8-PowerTDFN | 1.1mm | 6.25mm | Surface Mount | 56.5mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | R-PDSO-N5 | 1 | FET General Purpose Power | 1 | MO-240AA | DRAIN | Single | 2.7W | 50 ns | 2.7W Ta 156W Tc | 25A | 150°C | SWITCHING | 0.0024Ohm | 40 ns | SILICON | N-Channel | 2.4m Ω @ 25A, 10V | 4.5V @ 250μA | 10680pF @ 40V | 155nC @ 10V | 34ns | 11 ns | 20V | 80V | 25A Ta 130A Tc | 300A | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
FCB20N60TM | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 2005 | SuperFET™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | FCB20N60 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 208W Tc | SWITCHING | 0.19Ohm | 600V | SILICON | N-Channel | 190m Ω @ 10A, 10V | 5V @ 250μA | 3080pF @ 25V | 98nC @ 10V | 20A | 20A Tc | 600V | 60A | 690 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
NTP110N65S3HF | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | FRFET®, SuperFET® III | yes | Active | Not Applicable | TO-220-3 | compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 240W Tc | N-Channel | 110m Ω @ 15A, 10V | 5V @ 740μA | 2635pF @ 400V | 62nC @ 10V | 30A Tc | 650V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FCP11N60F | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 2 days ago) | Through Hole | Tube | 2005 | SuperFET™ | yes | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.1mm | ROHS3 Compliant | Lead Free | 11A | 3 | TO-220-3 | No SVHC | 9.4mm | 4.7mm | 380MOhm | Through Hole | 1.8g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | Single | 125W | 34 ns | 5V | 125W Tc | 11A | SWITCHING | 119 ns | 100μA | SILICON | N-Channel | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 1490pF @ 25V | 52nC @ 10V | 98ns | 56 ns | 30V | 600V | 600V | 5 V | 11A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||
FQA24N60 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 9 Weeks | ACTIVE (Last Updated: 6 days ago) | Through Hole | Tube | 2000 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | 23.5A | 3 | TO-3P-3, SC-65-3 | No SVHC | 18.9mm | 5mm | Through Hole | 6.401g | -55°C~150°C TJ | 600V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | Single | 310W | 90 ns | 5V | 310W Tc | 23.5A | SWITCHING | 0.24Ohm | 200 ns | SILICON | N-Channel | 240m Ω @ 11.8A, 10V | 5V @ 250μA | 5500pF @ 25V | 145nC @ 10V | 270ns | 170 ns | 30V | 600V | 23.5A Tc | 94A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
FQA44N30 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | Through Hole | Tube | 2013 | QFET® | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | Lead Free | 43.5A | No | 3 | TO-3P-3, SC-65-3 | 20.1mm | 5mm | Through Hole | 6.401g | -55°C~150°C TJ | 300V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Tin (Sn) | FET General Purpose Power | 1 | Single | 310W | 85 ns | 310W Tc | 43.5A | SWITCHING | 0.069Ohm | 240 ns | SILICON | N-Channel | 69m Ω @ 21.75A, 10V | 5V @ 250μA | 5600pF @ 25V | 150nC @ 10V | 470ns | 230 ns | 30V | 300V | 43.5A Tc | 174A | 1700 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
NVHL072N65S3 | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 4 Weeks | SuperFET® III | yes | Active | Not Applicable | ROHS3 Compliant | TO-247-3 | not_compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Tin (Sn) | 312W Tc | N-Channel | 72m Ω @ 22A, 10V | 4.5V @ 1mA | 3300pF @ 400V | 82nC @ 10V | 44A Tc | 650V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FCH47N60N | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 15 Weeks | ACTIVE (Last Updated: 20 hours ago) | Through Hole | Tube | 2004 | SupreMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.95mm | ROHS3 Compliant | 3 | TO-247-3 | No SVHC | not_compliant | 21mm | 5.03mm | Through Hole | 6.39g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | FCH47N60 | FET General Purpose Power | Not Qualified | 1 | Single | 368W | 11 ns | 2V | 368W Tc | 47A | SWITCHING | 0.062Ohm | 135 ns | SILICON | N-Channel | 62m Ω @ 23.5A, 10V | 4V @ 250μA | 6700pF @ 100V | 151nC @ 10V | 9ns | 22 ns | 30V | 600V | 47A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
FCA76N60N | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | ACTIVE (Last Updated: 3 days ago) | Through Hole | Tube | 2008 | SupreMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | 15.8mm | ROHS3 Compliant | No | 3 | TO-3P-3, SC-65-3 | No SVHC | 20.1mm | 5mm | Through Hole | 6.401g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | FET General Purpose Power | 1 | DRAIN | Single | 543W | 34 ns | 2V | 543W Tc | 76A | SWITCHING | 235 ns | SILICON | N-Channel | 36m Ω @ 38A, 10V | 4V @ 250μA | 12385pF @ 100V | 285nC @ 10V | 24ns | 32 ns | 30V | 600V | 76A Tc | 228A | 8022 mJ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
NVA4001NT1G | ON Semiconductor | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | ACTIVE (Last Updated: 2 days ago) | Tape & Reel (TR) | 2007 | yes | Active | 1 (Unlimited) | EAR99 | 150°C | -55°C | ROHS3 Compliant | Lead Free | 3 | SOT-416 | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 3 | YES | FET General Purpose Power | 300mW | N-CHANNEL | Single | 300mW | 13 ns | 1.5Ohm | 238mA | METAL-OXIDE SEMICONDUCTOR | 98 ns | 15ns | 60 ns | 10V | 20V | 20V | 20pF | 3 Ω |
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