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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Forward Voltage Case Connection Halogen Free Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Isolation Voltage Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IPD30N06S2L23ATMA3 IPD30N06S2L23ATMA3 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2006 OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN 55V 100W Tc 30A SILICON N-Channel 23m Ω @ 22A, 10V 2V @ 50μA 1091pF @ 25V 42nC @ 10V 30A Tc 120A 150 mJ 4.5V 10V ±20V
    BSZ075N08NS5ATMA1 BSZ075N08NS5ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED S-PDSO-N3 1 DRAIN Halogen Free Single 69W 10 ns 80V 69W Tc 40A SWITCHING 0.0075Ohm 19 ns SILICON N-Channel 7.5m Ω @ 20A, 10V 3.8V @ 36μA 2080pF @ 40V 29.5nC @ 10V 4ns 4 ns 20V 40A Tc 6V 10V ±20V
    IRF7493TRPBF IRF7493TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 8 SMD/SMT EAR99 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 9.3A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.4986mm 3.9878mm 15MOhm Surface Mount -55°C~150°C TJ 80V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING FET General Purpose Power 1 Single 2.5W 8.3 ns 4V 2.5W Tc 56 ns 9.3A SWITCHING 30 ns SILICON N-Channel 15m Ω @ 5.6A, 10V 4V @ 250μA 1510pF @ 25V 53nC @ 10V 7.5ns 12 ns 20V 80V 80V 4 V 9.3A Tc 74A 10V ±20V
    IPB110N20N3LFATMA1 IPB110N20N3LFATMA1 Infineon Technologies $0.00
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    		 download 13 Weeks Tape & Reel (TR) 2013 OptiMOS™ 3 Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W Tc 0.011Ohm 200V SILICON N-Channel 11m Ω @ 88A, 10V 4.2V @ 260μA 650pF @ 100V 76nC @ 10V 11A 88A Tc 200V 352A 560 mJ 10V ±20V
    IRFB4229PBF IRFB4229PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.82mm 46MOhm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 330mW 5V 330W Tc 290 ns 46A SWITCHING 30 ns SILICON N-Channel 46m Ω @ 26A, 10V 5V @ 250μA 4560pF @ 25V 110nC @ 10V 31ns 21 ns 30V 250V 250V 5 V 46A Tc 10V ±30V
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead 75A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.699mm 9.65mm 3.3MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 1.3V DRAIN Single 130W 20 ns 4V 300W Tc 75A SWITCHING 87 ns SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 7960pF @ 25V 290nC @ 10V 20ns 87 ns 20V 55V 4 V 75A Tc 890A 940 mJ 10V ±20V
    IRFP1405PBF IRFP1405PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Lead Free 95A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-247-3 No SVHC 20.7mm 5.3086mm 5.3Ohm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 310W 12 ns 4V 310W Tc 95A SWITCHING 140 ns SILICON N-Channel 5.3m Ω @ 95A, 10V 4V @ 250μA 5600pF @ 25V 180nC @ 10V 160ns 150 ns 20V 55V 55V 4 V 95A Tc 640A 10V ±20V
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    		 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free No 3 TO-247-3 No SVHC 20.7mm 5.3086mm 3.3MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 340W 15 ns 4V 340W Tc 63 ns 120A SWITCHING 40 ns SILICON N-Channel 3.3m Ω @ 75A, 10V 4V @ 250μA 9400pF @ 50V 220nC @ 10V 76ns 77 ns 20V 75V 75V 4 V 200A 120A Tc 850A 200 mJ 10V ±20V
    IRFP4227PBF IRFP4227PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2007 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 15.87mm ROHS3 Compliant Lead Free Tin No 3 FAST SWITCHING TO-247-3 No SVHC 20.7mm 5.3086mm 25MOhm Through Hole -40°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 330W 33 ns 5V 330W Tc 150 ns 65A SWITCHING 21 ns SILICON N-Channel 25m Ω @ 46A, 10V 5V @ 250μA 4600pF @ 25V 98nC @ 10V 20ns 31 ns 30V 200V 240V 5 V 65A Tc 260A 10V ±30V
    IRFB4137PBF IRFB4137PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2012 HEXFET® Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 9.02mm 4.83mm 69MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) FET General Purpose Power 1 Single 341W 18 ns 5V 341W Tc 38A 34 ns N-Channel 69m Ω @ 24A, 10V 5V @ 250μA 5168pF @ 50V 125nC @ 10V 23ns 20 ns 20V 300V 38A Tc 10V ±20V
    IPD90N04S405ATMA1 IPD90N04S405ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2010 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 9 ns 40V 65W Tc 86A 0.0052Ohm 7 ns SILICON N-Channel 5.2m Ω @ 86A, 10V 4V @ 30μA 2960pF @ 25V 37nC @ 10V 11ns 10 ns 20V 86A Tc 77 mJ 10V ±20V
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2003 OptiMOS™ no Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 LOGIC LEVEL COMPATIBLE TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN Not Halogen Free 79W 15 ns 60V 79W Tc 50A SWITCHING 0.0079Ohm 37 ns SILICON N-Channel 7.9m Ω @ 50A, 10V 2.2V @ 34μA 4900pF @ 30V 29nC @ 4.5V 26ns 7 ns 20V 50A Tc 200A 4.5V 10V ±20V
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Lead Free 9.4A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 380mOhm Surface Mount -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 TO-252AA DRAIN Single 86W 7.5 ns 5.5V 86W Tc 9.4A SWITCHING 13 ns SILICON N-Channel 380m Ω @ 5.6A, 10V 5.5V @ 250μA 560pF @ 25V 27nC @ 10V 16ns 9.3 ns 30V 200V 200V 5.5 V 9.4A Tc 10V ±30V
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    		 12 Weeks Surface Mount Tape & Reel (TR) 1995 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead 9.7A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Unknown 4.826mm 9.65mm Surface Mount -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 3.8W 4.5 ns 3.8W Ta 48W Tc 9.7A SWITCHING 0.2Ohm 32 ns SILICON N-Channel 200m Ω @ 5.7A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 23ns 23 ns 20V 100V 9.7A Tc 10V ±20V
    IPD50N10S3L16ATMA1 IPD50N10S3L16ATMA1 Infineon Technologies $0.00
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    		 download 14 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Contains Lead 3 TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED R-PSSO-G2 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 10 ns 100V 100W Tc 50A 0.0199Ohm 29 ns SILICON N-Channel 15m Ω @ 50A, 10V 2.4V @ 60μA 4180pF @ 25V 64nC @ 10V 5ns 20V 50A Tc 200A 4.5V 10V ±20V
    IRLZ34NSTRLPBF IRLZ34NSTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 1998 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 10.668mm ROHS3 Compliant Contains Lead 30A No 3 LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 35mOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 68W 8.9 ns 2V 3.8W Ta 68W Tc 30A SWITCHING 21 ns SILICON N-Channel 35m Ω @ 16A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 100ns 29 ns 16V 55V 55V 2 V 30A Tc 4V 10V ±16V
    IRLR3705ZTRPBF IRLR3705ZTRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 2 SMD/SMT EAR99 6.7056mm ROHS3 Compliant Contains Lead, Lead Free Tin 42A No 3 HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.2606mm 6.22mm 8MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 TO-252AA DRAIN Single 130W 17 ns 3V 130W Tc 42 ns 89A SWITCHING 33 ns SILICON N-Channel 8m Ω @ 42A, 10V 3V @ 250μA 2900pF @ 25V 66nC @ 5V 150ns 70 ns 16V 55V 55V 3 V 42A Tc 4.5V 10V ±16V
    SPD04N80C3ATMA1 SPD04N80C3ATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2005 CoolMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Lead Free 4A 3 TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~150°C TJ 800V MOSFET (Metal Oxide) 1 63W 25 ns 800V 1.1Ohm PG-TO252-3 63W Tc 4A 72 ns N-Channel 1.3Ohm @ 2.5A, 10V 3.9V @ 240μA 570pF @ 100V 31nC @ 10V 15ns 12 ns 20V 4A Tc 800V 570pF 10V ±20V 1.3 Ω
    BSC061N08NS5ATMA1 BSC061N08NS5ATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ yes Active 1 (Unlimited) 5 ROHS3 Compliant Contains Lead 8 8-PowerTDFN Surface Mount 506.605978mg -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL FLAT NOT SPECIFIED NOT SPECIFIED R-PDSO-F5 1 1 DRAIN Halogen Free Single 11 ns 80V 2.5W Ta 74W Tc 82A SWITCHING 19 ns SILICON N-Channel 6.1m Ω @ 41A, 10V 3.8V @ 41μA 2500pF @ 40V 33nC @ 10V 6ns 5 ns 20V 82A Tc 50 mJ 6V 10V ±20V
    IRLR2905TRLPBF IRLR2905TRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 110W Tc SWITCHING 0.03Ohm 55V SILICON N-Channel 27m Ω @ 25A, 10V 2V @ 250μA 1700pF @ 25V 48nC @ 5V 20A 42A Tc 55V 160A 210 mJ 4V 10V ±16V
    BSC050N03LSGATMA1 BSC050N03LSGATMA1 Infineon Technologies $0.00
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    		 download 39 Weeks Surface Mount Tape & Reel (TR) 2000 OptiMOS™ Active 1 (Unlimited) 150°C -55°C ROHS3 Compliant Contains Lead Tin 8 8-PowerTDFN No SVHC Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 Halogen Free 50W 2.2V 30V 4.2mOhm PG-TDSON-8-5 2.5W Ta 50W Tc 80A N-Channel 5mOhm @ 30A, 10V 2.2V @ 250μA 2800pF @ 15V 35nC @ 10V 4ns 20V 18A Ta 80A Tc 30V 2.8nF 4.5V 10V ±20V 5 mΩ
    IRLB3813PBF IRLB3813PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2009 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.668mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.02mm 4.826mm 1.95MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 230W 36 ns 1.9V 230W Tc 36 ns 260A SWITCHING 33 ns SILICON N-Channel 1.95m Ω @ 60A, 10V 2.35V @ 150μA 8420pF @ 15V 86nC @ 4.5V 170ns 60 ns 20V 30V 30V 1.9 V 120A 260A Tc 1050A 520 mJ 4.5V 10V ±20V
    IRL3705NPBF IRL3705NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 1997 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Contains Lead, Lead Free Tin 89A No 3 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 12mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 130W 12 ns 2V 170W Tc 140 ns 89A SWITCHING 37 ns SILICON N-Channel 10m Ω @ 46A, 10V 2V @ 250μA 3600pF @ 25V 98nC @ 5V 140ns 78 ns 16V 55V 55V 2 V 77A 89A Tc 4V 10V ±16V
    IPLU300N04S41R1XTMA1 IPLU300N04S41R1XTMA1 Infineon Technologies $0.00
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    		 download 20 Weeks Surface Mount Tape & Reel (TR) 2013 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free 8 ULTRA LOW RESISTANCE 8-PowerSFN Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE FLAT NOT SPECIFIED NOT SPECIFIED R-PSSO-F2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 40V 300W Tc 300A 0.00115Ohm SILICON N-Channel 1.15m Ω @ 100A, 10V 4V @ 125μA 12090pF @ 25V 151nC @ 10V 300A Tc 1200A 300 mJ 10V ±20V
    IRFIZ44NPBF IRFIZ44NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6172mm ROHS3 Compliant Lead Free 30A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-220-3 Full Pack No SVHC 9.8mm 4.826mm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 1 TO-220AB ISOLATED Single 38W 7.3 ns 4V 45W Tc 98 ns 31A SWITCHING 0.024Ohm 2.5kV 47 ns SILICON N-Channel 24m Ω @ 17A, 10V 4V @ 250μA 1300pF @ 25V 65nC @ 10V 69ns 60 ns 20V 55V 55V 4 V 31A Tc 10V ±20V
    BSC120N03MSGATMA1 BSC120N03MSGATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2002 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead Tin No 8 AVALANCHE RATED 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT 8 R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 28W 7.9 ns 30V 2.5W Ta 28W Tc 11A SWITCHING 7 ns SILICON N-Channel 12m Ω @ 30A, 10V 2V @ 250μA 1500pF @ 15V 20nC @ 10V 4.4ns 5 ns 16V 11A Ta 39A Tc 4.5V 10V ±20V
    BSC120N03LSGATMA1 BSC120N03LSGATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2013 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead No 8 AVALANCHE RATED, LOGIC LEVEL COMPATIBLE 8-PowerTDFN Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL FLAT 8 R-PDSO-F5 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 28W 2.7 ns 30V 2.5W Ta 28W Tc 12A SWITCHING 12 ns SILICON N-Channel 12m Ω @ 30A, 10V 2.2V @ 250μA 1200pF @ 15V 15nC @ 10V 2.2ns 2.2 ns 20V 12A Ta 39A Tc 4.5V 10V ±20V
    IPN60R1K0CEATMA1 IPN60R1K0CEATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2013 CoolMOS™ CE Active 3 (168 Hours) 150°C -40°C ROHS3 Compliant 3 SOT-223-3 No SVHC 1.8mm Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) 1 5W 10 ns 3V 900mOhm PG-SOT223 5W Tc 6.8A 150°C 60 ns N-Channel 1Ohm @ 1.5A, 10V 3.5V @ 130μA 280pF @ 100V 13nC @ 10V 20V 600V 6.8A Tc 600V 10V ±20V
    BSP92PH6327XTSA1 BSP92PH6327XTSA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2002 SIPMOS® yes Active 1 (Unlimited) 4 EAR99 6.5mm ROHS3 Compliant Lead Free Tin 4 LOGIC LEVEL COMPATIBLE TO-261-4, TO-261AA No SVHC 1.5mm 3.5mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 4 1 DRAIN Halogen Free Single 1.8W 5 ns -1.5V -250V 1.8W Ta 260mA 67 ns SILICON P-Channel 12 Ω @ 260mA, 10V 2V @ 130μA 104pF @ 25V 5.4nC @ 10V 6ns 33 ns 20V -250V 0.26A 260mA Ta 250V 2.8V 10V ±20V
    BSZ130N03MSGATMA1 BSZ130N03MSGATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2000 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant AVALANCHE RATED 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 YES S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.1W Ta 25W Tc SWITCHING 0.015Ohm 30V SILICON N-Channel 11.5m Ω @ 20A, 10V 2V @ 250μA 1300pF @ 15V 17nC @ 10V 9A 9A Ta 35A Tc 30V 140A 9 mJ 4.5V 10V ±20V