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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations Termination ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Lead Pitch Height Width Resistance Mounting Type Operating Temperature Voltage - Rated DC Technology Operating Mode Current JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Pin Count Surface Mount JESD-30 Code Number of Channels Subcategory Qualification Status Reference Standard Voltage Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Row Spacing Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Reverse Recovery Time Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Max Junction Temperature (Tj) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage FET Feature Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    IPP70N10S312AKSA1 IPP70N10S312AKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2008 OptiMOS™ Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 TO-220-3 not_compliant Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 17 ns 100V 125W Tc 70A 0.0116Ohm 25 ns SILICON N-Channel 11.6m Ω @ 70A, 10V 4V @ 83μA 4355pF @ 25V 66nC @ 10V 8ns 20V 70A Tc 280A 410 mJ 10V ±20V
    AUIRFS4310Z AUIRFS4310Z Infineon Technologies $0.00
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    		 download 11 Weeks Tube 2010 HEXFET® Not For New Designs 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 250W Tc SWITCHING 0.006Ohm 100V SILICON N-Channel 6m Ω @ 75A, 10V 4V @ 150μA 6860pF @ 50V 170nC @ 10V 120A 120A Tc 100V 560A 130 mJ 10V ±20V
    IPP100N10S305AKSA1 IPP100N10S305AKSA1 Infineon Technologies $0.00
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    		 download Tube 2006 OptiMOS™ Not For New Designs 1 (Unlimited) 3 EAR99 10mm ROHS3 Compliant 3 TO-220-3 not_compliant 9.25mm 4.4mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED NO 1 TO-220AB Halogen Free Single 300W 34 ns 100V 300W Tc 100A 0.0051Ohm 60 ns SILICON N-Channel 5.1m Ω @ 100A, 10V 4V @ 240μA 11570pF @ 25V 176nC @ 10V 17ns 20 ns 20V 100V 100A Tc 400A 1445 mJ 10V ±20V
    IRFR220NTRLPBF IRFR220NTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 43W Tc SWITCHING 0.6Ohm 200V SILICON N-Channel 600m Ω @ 2.9A, 10V 4V @ 250μA 300pF @ 25V 23nC @ 10V 5A 5A Tc 200V 20A 46 mJ 10V ±20V
    IRF7410TRPBF IRF7410TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2006 HEXFET® Active 1 (Unlimited) 8 SMD/SMT 4.9784mm ROHS3 Compliant Lead Free Tin -16A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 3.9878mm 7MOhm Surface Mount -55°C~150°C TJ -12V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL GULL WING 260 30 1 1 6.3 mm Single 2.5W 13 ns -400mV 2.5W Ta 145 ns -16A 150°C SWITCHING 271 ns SILICON P-Channel 7m Ω @ 16A, 4.5V 900mV @ 250μA 8676pF @ 10V 91nC @ 4.5V 12ns 200 ns 8V -12V -12V -900 mV 16A Ta 12V 65A 1.8V 4.5V ±8V
    IRF7807VTRPBF IRF7807VTRPBF Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Not For New Designs 1 (Unlimited) EAR99 4.9784mm ROHS3 Compliant Lead Free 8.3A No 8 8-SOIC (0.154, 3.90mm Width) 1.4986mm 3.9878mm 25MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) FET General Purpose Power 1 Single 2.5W 6.3 ns 2.5W Ta 8.3A 11 ns N-Channel 25m Ω @ 7A, 4.5V 3V @ 250μA 14nC @ 5V 1.2ns 2.2 ns 20V 30V 8.3A Ta 4.5V ±20V
    IPD15N06S2L64ATMA2 IPD15N06S2L64ATMA2 Infineon Technologies $0.00
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    		 download 10 Weeks Tape & Reel (TR) 2006 Automotive, AEC-Q101, OptiMOS™ yes Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant Lead Free TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 55V 47W Tc 0.085Ohm SILICON N-Channel 64m Ω @ 13A, 10V 2V @ 14μA 354pF @ 25V 13nC @ 10V 19A 19A Tc 76A 43 mJ 4.5V 10V ±20V
    IRFR9024NTRLPBF IRFR9024NTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Tape & Reel (TR) 1997 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 38W Tc SWITCHING 0.175Ohm 55V SILICON P-Channel 175m Ω @ 6.6A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 11A 11A Tc 55V 44A 62 mJ 10V ±20V
    IRL80HS120 IRL80HS120 Infineon Technologies $0.00
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    		 download 18 Weeks Tape & Reel (TR) 2013 yes Active 1 (Unlimited) EAR99 ROHS3 Compliant 6-VDFN Exposed Pad Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED 11.5W Tc N-Channel 32m Ω @ 7.5A, 10V 2V @ 10μA 540pF @ 25V 7nC @ 4.5V 12.5A Tc 80V 4.5V 10V ±20V
    IRLHM630TRPBF IRLHM630TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Active 1 (Unlimited) 5 EAR99 3.3mm ROHS3 Compliant Lead Free No 8 8-VQFN Exposed Pad No SVHC 1mm 3.3mm 4.5MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL S-PDSO-N5 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN 37W 9.1 ns 800mV 2.7W Ta 37W Tc 21A SWITCHING 65 ns SILICON N-Channel 3.5m Ω @ 20A, 4.5V 1.1V @ 50μA 3170pF @ 25V 62nC @ 4.5V 32ns 43 ns 12V 30V 800 mV 21A Ta 40A Tc 2.5V 10V ±12V
    BSC030N03MSGATMA1 BSC030N03MSGATMA1 Infineon Technologies $0.00
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    		 download 26 Weeks Surface Mount Tape & Reel (TR) 2010 OptiMOS™ no Active 1 (Unlimited) 8 EAR99 ROHS3 Compliant Contains Lead Tin 8 AVALANCHE RATED 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 DUAL FLAT NOT SPECIFIED NOT SPECIFIED 8 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 69W 30V 2.5W Ta 69W Tc 21A SWITCHING SILICON N-Channel 3m Ω @ 30A, 10V 2V @ 250μA 5700pF @ 15V 73nC @ 10V 10ns 16V 21A Ta 100A Tc 400A 75 mJ 4.5V 10V ±20V
    IPD75N04S406ATMA1 IPD75N04S406ATMA1 Infineon Technologies $0.00
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    		 download 16 Weeks Tape & Reel (TR) 2010 Automotive, AEC-Q101, OptiMOS™ Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 not_compliant Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED YES R-PSSO-G2 1 SINGLE WITH BUILT-IN DIODE DRAIN 58W Tc 0.0059Ohm 40V SILICON N-Channel 5.9m Ω @ 75A, 10V 4V @ 26μA 2550pF @ 25V 32nC @ 10V 75A 75A Tc 40V 300A 72 mJ 10V ±20V
    IRF7807TRPBF IRF7807TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2004 HEXFET® Not For New Designs 1 (Unlimited) 8 SMD/SMT 4.9784mm ROHS3 Compliant Contains Lead, Lead Free 13A No 8 8-SOIC (0.154, 3.90mm Width) No SVHC 1.75mm 4.05mm 25MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING 1 1 6.3 mm Single 2.5W 12 ns 1V 2.5W Ta 8.3A 150°C SWITCHING 25 ns SILICON N-Channel 25m Ω @ 7A, 4.5V 1V @ 250μA 17nC @ 5V 17ns 6 ns 12V 30V 30V 1 V 8.3A Ta 66A 4.5V ±12V
    BSZ22DN20NS3GATMA1 BSZ22DN20NS3GATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2011 OptiMOS™ no Active 1 (Unlimited) 5 EAR99 ROHS3 Compliant Contains Lead 8 8-PowerTDFN not_compliant Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL NO LEAD NOT SPECIFIED NOT SPECIFIED 8 S-PDSO-N5 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 34W 200V 34W Tc 7A SWITCHING 0.225Ohm SILICON N-Channel 225m Ω @ 3.5A, 10V 4V @ 13μA 430pF @ 100V 5.6nC @ 10V 4ns 20V 7A 7A Tc 30 mJ 10V ±20V
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    		 download 14 Weeks Through Hole Tube 2000 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 6.7056mm ROHS3 Compliant Lead Free 13A 3 TO-251-3 Short Leads, IPak, TO-251AA No SVHC 2.39mm 2.3876mm 235MOhm Through Hole -55°C~175°C TJ 200V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power Not Qualified 1 DRAIN Single 110W 11 ns 110W Tc 13A SWITCHING 17 ns SILICON N-Channel 235m Ω @ 8A, 10V 5.5V @ 250μA 830pF @ 25V 38nC @ 10V 27ns 10 ns 30V 200V 200V 5.5 V 13A Tc 52A 10V ±30V
    BSS123NH6433XTMA1 BSS123NH6433XTMA1 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Cut Tape (CT) 2012 OptiMOS™ yes Active 1 (Unlimited) 3 2.9mm ROHS3 Compliant 3 LOGIC LEVEL COMPATIBLE TO-236-3, SC-59, SOT-23-3 1mm 1.3mm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL GULL WING AEC-Q101 1 Single 2.3 ns 500mW Ta 190mA 6Ohm 100V 7.4 ns SILICON N-Channel 6 Ω @ 190mA, 10V 1.8V @ 13μA 20.9pF @ 25V 0.9nC @ 10V 3.2ns 22 ns 20V 0.19A 190mA Ta 100V 4.5V 10V ±20V
    BSS126H6327XTSA2 BSS126H6327XTSA2 Infineon Technologies $0.00
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    		 download 10 Weeks Surface Mount Tape & Reel (TR) 2003 SIPMOS® Active 1 (Unlimited) 150°C -55°C 2.9mm ROHS3 Compliant Lead Free Tin No 3 TO-236-3, SC-59, SOT-23-3 1mm 1.3mm 700Ohm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) 1 Halogen Free Single 500mW 6.1 ns 600V 700Ohm SOT-23-3 500mW Ta 17mA 14 ns N-Channel 500Ohm @ 16mA, 10V 1.6V @ 8μA 28pF @ 25V 2.1nC @ 5V 9.7ns 20V Depletion Mode 21mA Ta 600V 21pF 0V 10V ±20V 700 mΩ
    IRLML2030TRPBF IRLML2030TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2003 HEXFET® Active 1 (Unlimited) 3 EAR99 3.0226mm ROHS3 Compliant Lead Free No 3 TO-236-3, SC-59, SOT-23-3 No SVHC 1.016mm 1.397mm 100MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING FET General Purpose Power 1 Single 1.3W 4.1 ns 1.7V 1.3W Ta 14 ns 2.7A SWITCHING 4.5 ns SILICON N-Channel 100m Ω @ 2.7A, 10V 2.3V @ 25μA 110pF @ 15V 1nC @ 4.5V 3.3ns 2.9 ns 20V 30V 1.7 V 2.2A 2.7A Ta 11A 4.5V 10V ±20V
    IPN60R3K4CEATMA1 IPN60R3K4CEATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2013 CoolMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 SOT-223-3 No SVHC not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) DUAL GULL WING NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE DRAIN 3V 5W Tc 2.6A SWITCHING 600V SILICON N-Channel 3.4 Ω @ 500mA, 10V 3.5V @ 40μA 93pF @ 100V 4.6nC @ 10V Super Junction 2.6A Tc 600V 10V ±20V
    IRFH3707TRPBF IRFH3707TRPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 3 EAR99 3mm ROHS3 Compliant Lead Free No 8 8-PowerVDFN No SVHC 950μm 3mm 12.4MOhm Surface Mount -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE DUAL S-PDSO-N3 1 SINGLE WITH BUILT-IN DIODE DRAIN 2.8W 7.8 ns 1.8V 2.8W Ta 12mA SWITCHING 8.7 ns SILICON N-Channel 12.4m Ω @ 12A, 10V 2.35V @ 25μA 755pF @ 15V 8.1nC @ 4.5V 10.2ns 9.7 ns 20V 30V 1.8 V 12A 12A Ta 29A Tc 96A 13 mJ 4.5V 10V ±20V
    IRL40B215 IRL40B215 Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount, Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) EAR99 10.67mm ROHS3 Compliant Lead Free 3 TO-220-3 Unknown 16.51mm 4.83mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED Single 21 ns 2.4V 143W Tc 120A 63 ns N-Channel 2.7m Ω @ 98A, 10V 2.4V @ 100μA 5225pF @ 25V 84nC @ 4.5V 20V 120A Tc 40V 4.5V 10V ±20V
    IRFZ44ESTRLPBF IRFZ44ESTRLPBF Infineon Technologies $0.00
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    		 download 12 Weeks Surface Mount Tape & Reel (TR) 2001 HEXFET® Active 1 (Unlimited) 2 EAR99 10.668mm ROHS3 Compliant Contains Lead, Lead Free Tin 48A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 23mOhm Surface Mount -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 110W 12 ns 4V 110W Tc 48A SWITCHING 70 ns SILICON N-Channel 23m Ω @ 29A, 10V 4V @ 250μA 1360pF @ 25V 60nC @ 10V 60ns 70 ns 20V 60V 48A Tc 220 mJ 10V ±20V
    IRFB3806PBF IRFB3806PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.6426mm ROHS3 Compliant Lead Free Tin No 3 TO-220-3 No SVHC 9.017mm 4.82mm 15.8MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 71W 6.3 ns 4V 71W Tc 33 ns 43A SWITCHING 49 ns SILICON N-Channel 15.8m Ω @ 25A, 10V 4V @ 50μA 1150pF @ 50V 30nC @ 10V 40ns 47 ns 20V 60V 43A Tc 10V ±20V
    IRFZ46NPBF IRFZ46NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2002 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.54mm ROHS3 Compliant Contains Lead, Lead Free Tin 53A 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE 40A e3 250 30 FET General Purpose Power Not Qualified 55V 1 TO-220AB DRAIN Single 88W 14 ns 4V 107W Tc 101 ns 53A SWITCHING 52 ns SILICON N-Channel 16.5m Ω @ 28A, 10V 4V @ 250μA 1696pF @ 25V 72nC @ 10V 76ns 57 ns 20V 55V 55V 4 V 53A Tc 10V ±20V
    IPP147N12N3GXKSA1 IPP147N12N3GXKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2008 OptiMOS™ yes Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant Lead Free 3 TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-220AB Halogen Free 107W 16 ns 120V 107W Tc 56A SWITCHING 24 ns SILICON N-Channel 14.7m Ω @ 56A, 10V 4V @ 61μA 3220pF @ 60V 49nC @ 10V 9ns 4 ns 20V 56A Ta 224A 90 mJ 10V ±20V
    IRF3415PBF IRF3415PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2004 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.5156mm ROHS3 Compliant Lead Free 43A No 3 AVALANCHE RATED TO-220-3 No SVHC 2.54mm 15.24mm 4.69mm 42MOhm Through Hole -55°C~175°C TJ 150V MOSFET (Metal Oxide) ENHANCEMENT MODE 43A e3 Matte Tin (Sn) - with Nickel (Ni) barrier FET General Purpose Power 150V 1 TO-220AB DRAIN Single 200W 12 ns 4V 200W Tc 390 ns 43A SWITCHING 71 ns SILICON N-Channel 42m Ω @ 22A, 10V 4V @ 250μA 2400pF @ 25V 200nC @ 10V 55ns 69 ns 20V 150V 150V 4 V 43A Tc 590 mJ 10V ±20V
    IRFZ44VZPBF IRFZ44VZPBF Infineon Technologies $0.00
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    		 12 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 Through Hole EAR99 10.6426mm ROHS3 Compliant Lead Free 57A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 16.51mm 4.82mm 12mOhm Through Hole -55°C~175°C TJ 60V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 92W 14 ns 92W Tc 57A SWITCHING 35 ns SILICON N-Channel 12m Ω @ 34A, 10V 4V @ 250μA 1690pF @ 25V 65nC @ 10V 62ns 38 ns 20V 60V 60V 4 V 57A Tc 10V ±20V
    IRFB4610PBF IRFB4610PBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2006 HEXFET® Active 1 (Unlimited) 3 EAR99 10.54mm ROHS3 Compliant Lead Free 73A 3 TO-220-3 No SVHC 2.54mm 8.77mm 4.69mm 14mOhm Through Hole -55°C~175°C TJ 100V MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB DRAIN Single 190W 18 ns 4V 35 ns 190W Tc 53 ns 73A SWITCHING 3 ns SILICON N-Channel 14m Ω @ 44A, 10V 4V @ 100μA 3550pF @ 50V 140nC @ 10V 87ns 70 ns 20V 100V 100V 4 V 73A Tc 290A 10V ±20V
    IRFP054NPBF IRFP054NPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Bulk 1997 HEXFET® Active 1 (Unlimited) 3 EAR99 15.87mm ROHS3 Compliant Contains Lead, Lead Free 72A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-247-3 No SVHC 5.45mm 20.7mm 5.3086mm 12mOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-247AC DRAIN Single 130W 11 ns 4V 170W Tc 120 ns 81A SWITCHING 40 ns SILICON N-Channel 12m Ω @ 43A, 10V 4V @ 250μA 2900pF @ 25V 130nC @ 10V 66ns 46 ns 20V 55V 55V 4 V 81A Tc 290A 10V ±20V
    IRFI4410ZPBF IRFI4410ZPBF Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 HEXFET® Active 1 (Unlimited) 3 EAR99 10.7442mm ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack No SVHC 9.8044mm 4.826mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED FET General Purpose Power Not Qualified 1 TO-220AB ISOLATED Single 47W 15 ns 4V 47W Tc 43A SWITCHING 43 ns SILICON N-Channel 9.3m Ω @ 26A, 10V 4V @ 150μA 4910pF @ 50V 110nC @ 10V 27ns 30 ns 30V 100V 43A Tc 170A 10V ±30V