Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Lead Pitch | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Row Spacing | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Reverse Recovery Time | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IPD15N06S2L64ATMA2 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Tape & Reel (TR) | 2006 | Automotive, AEC-Q101, OptiMOS™ | yes | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Lead Free | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 55V | 47W Tc | 0.085Ohm | SILICON | N-Channel | 64m Ω @ 13A, 10V | 2V @ 14μA | 354pF @ 25V | 13nC @ 10V | 19A | 19A Tc | 76A | 43 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRFR9024NTRLPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tape & Reel (TR) | 1997 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | AVALANCHE RATED, HIGH RELIABILITY | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | YES | R-PSSO-G2 | Other Transistors | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 38W Tc | SWITCHING | 0.175Ohm | 55V | SILICON | P-Channel | 175m Ω @ 6.6A, 10V | 4V @ 250μA | 350pF @ 25V | 19nC @ 10V | 11A | 11A Tc | 55V | 44A | 62 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IRL80HS120 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tape & Reel (TR) | 2013 | yes | Active | 1 (Unlimited) | EAR99 | ROHS3 Compliant | 6-VDFN Exposed Pad | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | 11.5W Tc | N-Channel | 32m Ω @ 7.5A, 10V | 2V @ 10μA | 540pF @ 25V | 7nC @ 4.5V | 12.5A Tc | 80V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRLHM630TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 5 | EAR99 | 3.3mm | ROHS3 Compliant | Lead Free | No | 8 | 8-VQFN Exposed Pad | No SVHC | 1mm | 3.3mm | 4.5MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | S-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 37W | 9.1 ns | 800mV | 2.7W Ta 37W Tc | 21A | SWITCHING | 65 ns | SILICON | N-Channel | 3.5m Ω @ 20A, 4.5V | 1.1V @ 50μA | 3170pF @ 25V | 62nC @ 4.5V | 32ns | 43 ns | 12V | 30V | 800 mV | 21A Ta 40A Tc | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
BSC030N03MSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | OptiMOS™ | no | Active | 1 (Unlimited) | 8 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 69W | 30V | 2.5W Ta 69W Tc | 21A | SWITCHING | SILICON | N-Channel | 3m Ω @ 30A, 10V | 2V @ 250μA | 5700pF @ 15V | 73nC @ 10V | 10ns | 16V | 21A Ta 100A Tc | 400A | 75 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPD75N04S406ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 58W Tc | 0.0059Ohm | 40V | SILICON | N-Channel | 5.9m Ω @ 75A, 10V | 4V @ 26μA | 2550pF @ 25V | 32nC @ 10V | 75A | 75A Tc | 40V | 300A | 72 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRF7807TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Not For New Designs | 1 (Unlimited) | 8 | SMD/SMT | 4.9784mm | ROHS3 Compliant | Contains Lead, Lead Free | 13A | No | 8 | 8-SOIC (0.154, 3.90mm Width) | No SVHC | 1.75mm | 4.05mm | 25MOhm | Surface Mount | -55°C~150°C TJ | 30V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | 1 | 6.3 mm | Single | 2.5W | 12 ns | 1V | 2.5W Ta | 8.3A | 150°C | SWITCHING | 25 ns | SILICON | N-Channel | 25m Ω @ 7A, 4.5V | 1V @ 250μA | 17nC @ 5V | 17ns | 6 ns | 12V | 30V | 30V | 1 V | 8.3A Ta | 66A | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||
BSZ22DN20NS3GATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | S-PDSO-N5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 34W | 200V | 34W Tc | 7A | SWITCHING | 0.225Ohm | SILICON | N-Channel | 225m Ω @ 3.5A, 10V | 4V @ 13μA | 430pF @ 100V | 5.6nC @ 10V | 4ns | 20V | 7A | 7A Tc | 30 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPD90N04S4L04ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Surface Mount | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 7 ns | 40V | 71W Tc | 90A | 22 ns | SILICON | N-Channel | 3.8m Ω @ 90A, 10V | 2.2V @ 35μA | 4690pF @ 25V | 60nC @ 10V | 11ns | 28 ns | 20V | 90A Tc | 95 mJ | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||
IPC90N04S53R6ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Tape & Reel (TR) | 2016 | Automotive, AEC-Q101, OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | YES | R-PDSO-F3 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W Tc | 0.0044Ohm | 40V | SILICON | N-Channel | 3.6m Ω @ 45A, 10V | 3.4V @ 23μA | 1950pF @ 25V | 32.6nC @ 10V | 90A | 90A Tc | 40V | 360A | 40 mJ | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
BSC196N10NSGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 26 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 78W | 3V | 100V | 78W Tc | 45A | SWITCHING | SILICON | N-Channel | 19.6m Ω @ 45A, 10V | 4V @ 42μA | 2300pF @ 50V | 34nC @ 10V | 22ns | 20V | 8.5A Ta 45A Tc | 60 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
BSZ0901NSATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 8 | 8-PowerTDFN | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-N3 | FET General Purpose Powers | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 5 ns | 30V | 2.1W Ta 50W Tc | 25A | SWITCHING | 0.0026Ohm | 27 ns | SILICON | N-Channel | 2m Ω @ 20A, 10V | 2.2V @ 250μA | 2850pF @ 15V | 45nC @ 10V | 7.2ns | 4.6 ns | 20V | 22A | 22A Ta 40A Tc | 160A | 150 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
IPD22N08S2L50ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | OptiMOS™ | Active | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 75V | 75W Tc | 27A | 0.065Ohm | SILICON | N-Channel | 50m Ω @ 50A, 10V | 2V @ 31μA | 630pF @ 25V | 33nC @ 10V | 27A Tc | 108A | 94 mJ | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
BSC060P03NS3EGATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Surface Mount | Tape & Reel (TR) | 2011 | OptiMOS™ | no | Active | 1 (Unlimited) | 5 | EAR99 | ROHS3 Compliant | Contains Lead | Tin | 8 | AVALANCHE RATED | 8-PowerTDFN | No SVHC | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 8 | R-PDSO-F5 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 2.5W | -2.5V | -30V | 2.5W Ta 83W Tc | 17.7A | SWITCHING | 0.006Ohm | SILICON | P-Channel | 6m Ω @ 50A, 10V | 3.1V @ 150μA | 6020pF @ 15V | 81nC @ 10V | 139ns | 25V | 17.7A Ta 100A Tc | 30V | 200A | 6V 10V | ±25V | ||||||||||||||||||||||||||||||||||||
IPP147N12N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 107W | 16 ns | 120V | 107W Tc | 56A | SWITCHING | 24 ns | SILICON | N-Channel | 14.7m Ω @ 56A, 10V | 4V @ 61μA | 3220pF @ 60V | 49nC @ 10V | 9ns | 4 ns | 20V | 56A Ta | 224A | 90 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IRF3415PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2004 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.5156mm | ROHS3 Compliant | Lead Free | 43A | No | 3 | AVALANCHE RATED | TO-220-3 | No SVHC | 2.54mm | 15.24mm | 4.69mm | 42MOhm | Through Hole | -55°C~175°C TJ | 150V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 43A | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | FET General Purpose Power | 150V | 1 | TO-220AB | DRAIN | Single | 200W | 12 ns | 4V | 200W Tc | 390 ns | 43A | SWITCHING | 71 ns | SILICON | N-Channel | 42m Ω @ 22A, 10V | 4V @ 250μA | 2400pF @ 25V | 200nC @ 10V | 55ns | 69 ns | 20V | 150V | 150V | 4 V | 43A Tc | 590 mJ | 10V | ±20V | |||||||||||||||||||||||||||||
IRFZ44VZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
12 Weeks | Through Hole | Tube | 2003 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.6426mm | ROHS3 Compliant | Lead Free | 57A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | TO-220-3 | No SVHC | 16.51mm | 4.82mm | 12mOhm | Through Hole | -55°C~175°C TJ | 60V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 92W | 14 ns | 92W Tc | 57A | SWITCHING | 35 ns | SILICON | N-Channel | 12m Ω @ 34A, 10V | 4V @ 250μA | 1690pF @ 25V | 65nC @ 10V | 62ns | 38 ns | 20V | 60V | 60V | 4 V | 57A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
IRFB4610PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2006 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.54mm | ROHS3 Compliant | Lead Free | 73A | 3 | TO-220-3 | No SVHC | 2.54mm | 8.77mm | 4.69mm | 14mOhm | Through Hole | -55°C~175°C TJ | 100V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 190W | 18 ns | 4V | 35 ns | 190W Tc | 53 ns | 73A | SWITCHING | 3 ns | SILICON | N-Channel | 14m Ω @ 44A, 10V | 4V @ 100μA | 3550pF @ 50V | 140nC @ 10V | 87ns | 70 ns | 20V | 100V | 100V | 4 V | 73A Tc | 290A | 10V | ±20V | ||||||||||||||||||||||||||||||||
IRFP054NPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Bulk | 1997 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 15.87mm | ROHS3 Compliant | Contains Lead, Lead Free | 72A | No | 3 | AVALANCHE RATED, HIGH RELIABILITY | TO-247-3 | No SVHC | 5.45mm | 20.7mm | 5.3086mm | 12mOhm | Through Hole | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-247AC | DRAIN | Single | 130W | 11 ns | 4V | 170W Tc | 120 ns | 81A | SWITCHING | 40 ns | SILICON | N-Channel | 12m Ω @ 43A, 10V | 4V @ 250μA | 2900pF @ 25V | 130nC @ 10V | 66ns | 46 ns | 20V | 55V | 55V | 4 V | 81A Tc | 290A | 10V | ±20V | ||||||||||||||||||||||||||||||||||
IRFI4410ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 10.7442mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 Full Pack | No SVHC | 9.8044mm | 4.826mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | NOT SPECIFIED | NOT SPECIFIED | FET General Purpose Power | Not Qualified | 1 | TO-220AB | ISOLATED | Single | 47W | 15 ns | 4V | 47W Tc | 43A | SWITCHING | 43 ns | SILICON | N-Channel | 9.3m Ω @ 26A, 10V | 4V @ 150μA | 4910pF @ 50V | 110nC @ 10V | 27ns | 30 ns | 30V | 100V | 43A Tc | 170A | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
IPA60R190C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 40 Weeks | Tube | 2008 | CoolMOS™ | yes | Not For New Designs | 1 (Unlimited) | 3 | 10.36mm | ROHS3 Compliant | Lead Free | Tin | 3 | TO-220-3 Full Pack | No SVHC | 9.45mm | 4.57mm | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | Not Qualified | 1 | TO-220AB | ISOLATED | Halogen Free | Single | 34W | 15 ns | 34W Tc | 20.2A | SWITCHING | 0.19Ohm | 110 ns | SILICON | N-Channel | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 1400pF @ 100V | 63nC @ 10V | 11ns | 9 ns | 20V | 600V | 3 V | 20.2A Tc | 59A | 418 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
IRFB4310ZPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2008 | HEXFET® | Active | 1 (Unlimited) | 3 | Through Hole | EAR99 | 10.668mm | ROHS3 Compliant | Lead Free | No | 3 | TO-220-3 | No SVHC | 9.017mm | 4.826mm | 6MOhm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 250W | 20 ns | 4V | 250W Tc | 40 ns | 140A | SWITCHING | 55 ns | SILICON | N-Channel | 6m Ω @ 75A, 10V | 4V @ 150μA | 6860pF @ 50V | 170nC @ 10V | 60ns | 57 ns | 20V | 100V | 100V | 4 V | 120A Tc | 560A | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
IPP200N25N3GXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 13 Weeks | Through Hole | Tube | 2007 | OptiMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 300W | 18 ns | 250V | 300W Tc | 64A | SWITCHING | 0.02Ohm | 45 ns | SILICON | N-Channel | 20m Ω @ 64A, 10V | 4V @ 270μA | 7100pF @ 100V | 86nC @ 10V | 20ns | 12 ns | 20V | 64A Tc | 256A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
IRF100P219XKMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | StrongIRFET™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-247-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-247AC | DRAIN | 341W Tc | SWITCHING | 0.0017Ohm | 100V | SILICON | N-Channel | 1.7m Ω @ 100A, 10V | 3.8V @ 278μA | 12020pF @ 50V | 270nC @ 10V | 195A | 100V | 780A | 464 mJ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA70R750P7SXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | 2014 | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 21.2W Tc | SWITCHING | 0.75Ohm | 700V | SILICON | N-Channel | 750m Ω @ 1.4A, 10V | 3.5V @ 70μA | 306pF @ 400V | 8.3nC @ 400V | 6.5A Tc | 700V | 15.4A | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
IPP70N04S406AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2010 | OptiMOS™ | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | Halogen Free | 8 ns | 40V | 58W Tc | 70A | 0.0065Ohm | 7 ns | SILICON | N-Channel | 6.5m Ω @ 70A, 10V | 4V @ 26μA | 2550pF @ 25V | 32nC @ 10V | 10ns | 9 ns | 20V | 70A Tc | 280A | 72 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPAW60R280CEXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2013 | CoolMOS™ | yes | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-220-3 Full Pack, Variant | No SVHC | Through Hole | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 3V | 32W Tc | 19.3A | SWITCHING | 0.28Ohm | 600V | SILICON | N-Channel | 280m Ω @ 6.5A, 10V | 3.5V @ 430μA | 950pF @ 100V | 43nC @ 10V | Super Junction | 19.3A Tc | 600V | 40A | 284 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IRL40B215 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount, Through Hole | Tube | 2013 | HEXFET®, StrongIRFET™ | Active | 1 (Unlimited) | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | 3 | TO-220-3 | Unknown | 16.51mm | 4.83mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | NOT SPECIFIED | NOT SPECIFIED | Single | 21 ns | 2.4V | 143W Tc | 120A | 63 ns | N-Channel | 2.7m Ω @ 98A, 10V | 2.4V @ 100μA | 5225pF @ 25V | 84nC @ 4.5V | 20V | 120A Tc | 40V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
IPA80R600P7XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Tube | CoolMOS™ P7 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | TO-220-3 Full Pack | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | NO | R-PSFM-T3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 28W Tc | SWITCHING | 0.6Ohm | 800V | SILICON | N-Channel | 600m Ω @ 3.4A, 10V | 3.5V @ 170μA | 570pF @ 500V | 20nC @ 10V | 8A Tc | 800V | 22A | 20 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IPI029N06NAKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Through Hole | Tube | 2008 | OptiMOS™ | no | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Contains Lead | TO-262-3 Long Leads, I2Pak, TO-262AA | not_compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 136W | 60V | 3W Ta 136W Tc | 100A | SWITCHING | 0.0029Ohm | 30 ns | SILICON | N-Channel | 2.9m Ω @ 100A, 10V | 2.8V @ 75μA | 4100pF @ 30V | 56nC @ 10V | 15ns | 8 ns | 20V | 60V | 24A | 24A Ta 100A Tc | 400A | 6V 10V | ±20V |
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