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    Compare Image Name Manufacturer Pricing(USD) Quantity Weight(Kg) Size(LxWxH) Datasheet Factory Lead Time Mount Packaging Published Series Pbfree Code Part Status Moisture Sensitivity Level (MSL) Number of Terminations ECCN Code Max Operating Temperature Min Operating Temperature Length RoHS Status Lead Free Contact Plating Current Rating Radiation Hardening Number of Pins Additional Feature Package / Case REACH SVHC Reach Compliance Code Height Width Resistance Mounting Type Weight Operating Temperature Voltage - Rated DC Technology Operating Mode HTS Code JESD-609 Code Terminal Finish Terminal Position Terminal Form Peak Reflow Temperature (Cel) Time@Peak Reflow Temperature-Max (s) Base Part Number Pin Count Surface Mount JESD-30 Code Operating Temperature (Max) Number of Channels Subcategory Qualification Status Reference Standard Number of Elements Configuration JEDEC-95 Code Case Connection Halogen Free Polarity/Channel Type Power Dissipation-Max (Abs) Element Configuration Power Dissipation Turn On Delay Time Threshold Voltage Max Dual Supply Voltage Drain to Source Resistance Supplier Device Package Power Dissipation-Max Recovery Time Continuous Drain Current (ID) Transistor Application Drain-source On Resistance-Max DS Breakdown Voltage-Min FET Technology Turn-Off Delay Time Transistor Element Material FET Type Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Input Capacitance (Ciss) (Max) @ Vds Gate Charge (Qg) (Max) @ Vgs Rise Time Fall Time (Typ) Gate to Source Voltage (Vgs) Drain to Source Breakdown Voltage Dual Supply Voltage Nominal Vgs Drain Current-Max (Abs) (ID) Current - Continuous Drain (Id) @ 25°C Drain to Source Voltage (Vdss) Pulsed Drain Current-Max (IDM) Avalanche Energy Rating (Eas) Input Capacitance Drive Voltage (Max Rds On,Min Rds On) Vgs (Max) Rds On Max
    AUIRF2804L AUIRF2804L Infineon Technologies $0.00
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    		 download 16 Weeks Through Hole Tube 2003 HEXFET® Active 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant No 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC 9.65mm 4.6228mm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier 260 30 FET General Purpose Power 1 DRAIN Single 300W 13 ns 2V 300W Tc 195A SWITCHING 0.002Ohm 130 ns SILICON N-Channel 2m Ω @ 75A, 10V 4V @ 250μA 6450pF @ 25V 240nC @ 10V 120ns 130 ns 20V 40V 270A 195A Tc 540 mJ 10V ±20V
    IPB65R150CFDAATMA1 IPB65R150CFDAATMA1 Infineon Technologies $0.00
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    		 download 18 Weeks Surface Mount Tape & Reel (TR) 2008 Automotive, AEC-Q101, CoolMOS™ no Active 1 (Unlimited) 2 ROHS3 Compliant Contains Lead 3 HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB not_compliant Surface Mount -40°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE GULL WING NOT SPECIFIED NOT SPECIFIED 4 R-PSSO-G2 FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE DRAIN Halogen Free 650V 195.3W Tc 22.4A SWITCHING 0.15Ohm SILICON N-Channel 150m Ω @ 9.3A, 10V 4.5V @ 900μA 2340pF @ 100V 86nC @ 10V 22.4A Tc 72A 614 mJ 10V ±20V
    IPP027N08N5AKSA1 IPP027N08N5AKSA1 Infineon Technologies $0.00
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    		 download 13 Weeks Through Hole Tube 2013 OptiMOS™ yes Active 1 (Unlimited) 3 ROHS3 Compliant Contains Lead TO-220-3 not_compliant Through Hole 6.000006g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) NOT SPECIFIED NOT SPECIFIED R-PSFM-T3 1 1 TO-220AB DRAIN Halogen Free Single 22 ns 80V 214W Tc 120A SWITCHING 0.0027Ohm 46 ns SILICON N-Channel 2.7m Ω @ 100A, 10V 3.8V @ 154μA 8970pF @ 40V 123nC @ 10V 14ns 15 ns 20V 80V 120A Tc 480A 374 mJ 6V 10V ±20V
    IPI120N04S302AKSA1 IPI120N04S302AKSA1 Infineon Technologies $0.00
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    		 download Through Hole Tube 2007 OptiMOS™ Not For New Designs 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead 3 ULTRA LOW RESISTANCE TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE Halogen Free 40V 300W Tc 120A SILICON N-Channel 2.3m Ω @ 80A, 10V 4V @ 230μA 14300pF @ 25V 210nC @ 10V 120A Tc 480A 1880 mJ 10V ±20V
    AUIRFS4310TRL AUIRFS4310TRL Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tape & Reel (TR) 2013 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant No 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 300W 26 ns 300W Tc 75A SWITCHING 0.007Ohm 68 ns SILICON N-Channel 7m Ω @ 75A, 10V 4V @ 250μA 7670pF @ 50V 250nC @ 10V 110ns 78 ns 20V 100V 75A Tc 550A 980 mJ 10V ±20V
    IPA65R125C7XKSA1 IPA65R125C7XKSA1 Infineon Technologies $0.00
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    		 download 18 Weeks Through Hole Tube 2008 CoolMOS™ C7 Active 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-220-3 Full Pack Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Tin (Sn) SINGLE NOT SPECIFIED NOT SPECIFIED 1 SINGLE WITH BUILT-IN DIODE TO-220AB ISOLATED Halogen Free 14 ns 650V 32W Tc 10A SWITCHING 0.125Ohm 71 ns SILICON N-Channel 125m Ω @ 8.9A, 10V 4V @ 440μA 1670pF @ 400V 35nC @ 10V 15ns 8 ns 20V 10A Tc 75A 89 mJ 10V ±20V
    IPI100N12S305AKSA1 IPI100N12S305AKSA1 Infineon Technologies $0.00
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    		 download 39 Weeks 2016 yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant ENHANCEMENT MODE SINGLE THROUGH-HOLE NOT SPECIFIED NOT SPECIFIED NO R-PSIP-T3 AEC-Q101 1 SINGLE WITH BUILT-IN DIODE TO-262AA N-CHANNEL 0.0051Ohm 120V METAL-OXIDE SEMICONDUCTOR SILICON 100A 400A 1445 mJ
    AUIRFS4115 AUIRFS4115 Infineon Technologies $0.00
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    		 download 16 Weeks Surface Mount Tube 2015 HEXFET® Active 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) NOT SPECIFIED NOT SPECIFIED IRFS4115 375W Tc 99A N-Channel 12.1m Ω @ 62A, 10V 5V @ 250μA 5270pF @ 50V 120nC @ 10V 99A Tc 150V 10V ±20V
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    		 download 16 Weeks Tape & Reel (TR) 2010 HEXFET® Active 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 200W Tc SWITCHING 0.004Ohm 40V SILICON N-Channel 4m Ω @ 95A, 10V 4V @ 250μA 7360pF @ 25V 200nC @ 10V 75A 75A Tc 40V 650A 519 mJ 10V ±20V
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    		 download Through Hole Tube 2001 HEXFET® Not For New Designs 1 (Unlimited) 3 EAR99 10.668mm ROHS3 Compliant Lead Free No 3 TO-220-3 No SVHC 16.51mm 4.826mm 4.1MOhm Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE FET General Purpose Power 1 TO-220AB DRAIN Single 300W 20 ns 4V 300W Tc 210A SWITCHING 55 ns SILICON N-Channel 4.1m Ω @ 75A, 10V 4V @ 150μA 6920pF @ 50V 170nC @ 10V 68ns 68 ns 20V 75V 120A Tc 670A 10V ±20V
    IPI60R280C6XKSA1 IPI60R280C6XKSA1 Infineon Technologies $0.00
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    		 download 12 Weeks Through Hole Tube 2008 CoolMOS™ yes Not For New Designs 1 (Unlimited) 3 ROHS3 Compliant Lead Free 3 TO-262-3 Long Leads, I2Pak, TO-262AA Through Hole -55°C~150°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE NOT SPECIFIED NOT SPECIFIED 3 Not Qualified 1 SINGLE WITH BUILT-IN DIODE Halogen Free 104W 13 ns 600V 104W Tc 13.8A SWITCHING 0.28Ohm 100 ns SILICON N-Channel 280m Ω @ 6.5A, 10V 3.5V @ 430μA 950pF @ 100V 43nC @ 10V 11ns 12 ns 20V 13.8A Tc 40A 284 mJ 10V ±20V
    IPP80N06S2L09AKSA2 IPP80N06S2L09AKSA2 Infineon Technologies $0.00
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    		 download 14 Weeks Through Hole Tube 2006 OptiMOS™ yes Obsolete 1 (Unlimited) 3 EAR99 ROHS3 Compliant Contains Lead No 3 LOGIC LEVEL COMPATIBLE TO-220-3 Through Hole -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE 1 SINGLE WITH BUILT-IN DIODE TO-220AB 10 ns 55V 190W Tc 80A 53 ns SILICON N-Channel 8.5m Ω @ 52A, 10V 2V @ 125μA 2620pF @ 25V 105nC @ 10V 19ns 18 ns 20V 80A Tc 4.5V 10V ±20V
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    		 download 12 Weeks Surface Mount, Through Hole Tube 2013 HEXFET®, StrongIRFET™ Active 1 (Unlimited) 3 EAR99 ROHS3 Compliant 3 TO-262-3 Long Leads, I2Pak, TO-262AA No SVHC Surface Mount 2.084002g -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE NOT SPECIFIED NOT SPECIFIED 1 FET General Purpose Power 1 DRAIN Single 20 ns 3.7V 294W Tc 195A SWITCHING 0.0024Ohm 60V 118 ns SILICON N-Channel 2.4m Ω @ 100A, 10V 3.7V @ 250μA 10034pF @ 25V 279nC @ 10V 134ns 93 ns 20V 195A Tc 60V 944A 775 mJ 6V 10V ±20V
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    		 download Cut Tape (CT) 1999 HEXFET® Obsolete 1 (Unlimited) 4 EAR99 Non-RoHS Compliant HIGH RELIABILITY TO-261-4, TO-261AA Surface Mount MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) DUAL GULL WING 260 30 YES R-PDSO-G4 150°C FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 1W SWITCHING 0.2Ohm 100V SILICON N-Channel 200m Ω @ 1.6A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 1.6A 1.6A Ta 100V
    IRF9Z24NS IRF9Z24NS Infineon Technologies $0.00
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    		 Tube 1999 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 Non-RoHS Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE 8541.29.00.95 e0 Tin/Lead (Sn/Pb) SINGLE GULL WING 225 30 YES R-PSSO-G2 Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 45W Tc SWITCHING 0.175Ohm 55V SILICON P-Channel 175m Ω @ 7.2A, 10V 4V @ 250μA 350pF @ 25V 19nC @ 10V 12A 12A Tc 55V 48A 96 mJ 10V ±20V
    IRL540NSTRRPBF IRL540NSTRRPBF Infineon Technologies $0.00
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    		 download Surface Mount Tape & Reel (TR) 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 175°C -55°C 10.668mm ROHS3 Compliant Lead Free 36A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB 4.826mm 9.65mm Surface Mount 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 1 DRAIN Single 3.8W 11 ns 3.8W Ta 140W Tc 36A SWITCHING 39 ns N-Channel 44m Ω @ 18A, 10V 2V @ 250μA 1800pF @ 25V 74nC @ 5V 81ns 62 ns 16V 100V 36A Tc 4V 10V ±16V
    IRLR8113PBF IRLR8113PBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2004 HEXFET® Obsolete 1 (Unlimited) 175°C -55°C 6.7056mm RoHS Compliant Lead Free 94A No 3 TO-252-3, DPak (2 Leads + Tab), SC-63 No SVHC 2.3876mm 6.22mm 6MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) 1 Single 89W 9.2 ns 2.25V 7.4mOhm D-Pak 89W Tc 49 ns 94A 15 ns N-Channel 6mOhm @ 15A, 10V 2.25V @ 250μA 2920pF @ 15V 32nC @ 4.5V 3.8ns 10 ns 20V 30V 94A Tc 30V 2.92nF 4.5V 10V ±20V 6 mΩ
    IRLR120NPBF IRLR120NPBF Infineon Technologies $0.00
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    		 download 39 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 48W Tc N-Channel 185m Ω @ 6A, 10V 2V @ 250μA 440pF @ 25V 20nC @ 5V 10A Tc 100V 4V 10V ±16V
    IRLR2705PBF IRLR2705PBF Infineon Technologies $0.00
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    		 download 20 Weeks Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED TO-252-3, DPak (2 Leads + Tab), SC-63 Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252AA DRAIN 68W Tc SWITCHING 0.051Ohm 55V SILICON N-Channel 40m Ω @ 17A, 10V 2V @ 250μA 880pF @ 25V 25nC @ 5V 28A 28A Tc 55V 110A 110 mJ 4V 10V ±16V
    IRF520NSPBF IRF520NSPBF Infineon Technologies $0.00
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    		 Surface Mount Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 175°C -55°C 10.668mm ROHS3 Compliant Lead Free Tin 9.7A No 3 AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 10.16mm 200mOhm Surface Mount 100V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 48W 4.5 ns 4V 3.8W Ta 48W Tc 150 ns 9.7A SWITCHING 32 ns N-Channel 200m Ω @ 5.7A, 10V 4V @ 250μA 330pF @ 25V 25nC @ 10V 23ns 23 ns 20V 100V 4 V 9.7A Tc 10V ±20V
    IRLZ44ZSPBF IRLZ44ZSPBF Infineon Technologies $0.00
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    		 download 10 Weeks Tube 2004 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 80W Tc SWITCHING 0.0135Ohm 55V SILICON N-Channel 13.5m Ω @ 31A, 10V 3V @ 250μA 1620pF @ 25V 36nC @ 5V 51A 51A Tc 55V 204A 78 mJ 4.5V 10V ±16V
    IRF3709SPBF IRF3709SPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2001 HEXFET® Discontinued 1 (Unlimited) 150°C -55°C 10.668mm ROHS3 Compliant Lead Free 90A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.826mm 9.65mm 9MOhm Surface Mount -55°C~150°C TJ 30V MOSFET (Metal Oxide) 1 Single 120W 11 ns 3V 10.5mOhm D2PAK 3.1W Ta 120W Tc 90A 21 ns N-Channel 9mOhm @ 15A, 10V 3V @ 250μA 2672pF @ 16V 41nC @ 5V 171ns 9.2 ns 20V 30V 30V 3 V 90A Tc 30V 2.672nF 4.5V 10V ±20V 9 mΩ
    IRFZ46ZPBF IRFZ46ZPBF Infineon Technologies $0.00
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    		 download Through Hole Tube 2003 HEXFET® Obsolete 1 (Unlimited) 3 EAR99 10.6426mm RoHS Compliant Lead Free 51A No 3 AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE TO-220-3 No SVHC 9.017mm 4.82mm 13.6MOhm Through Hole -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE SINGLE FET General Purpose Power 1 SINGLE WITH BUILT-IN DIODE TO-220AB DRAIN 82W 13 ns 82W Tc 51A SWITCHING 37 ns SILICON N-Channel 13.6m Ω @ 31A, 10V 4V @ 250μA 1460pF @ 25V 46nC @ 10V 63ns 39 ns 20V 55V 55V 4 V 51A Tc 200A 97 mJ 10V ±20V
    IRF3707ZSPBF IRF3707ZSPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2003 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 10.67mm ROHS3 Compliant Lead Free 59A No 3 TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.83mm 9.652mm 12.5MOhm Surface Mount -55°C~175°C TJ 30V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power 1 DRAIN Single 57W 9.8 ns 1.8V 57W Tc 59 ns 59A SWITCHING 12 ns SILICON N-Channel 9.5m Ω @ 21A, 10V 2.25V @ 25μA 1210pF @ 15V 15nC @ 4.5V 41ns 3.6 ns 20V 30V 30V 1.8 V 42A 59A Tc 40 mJ 4.5V 10V ±20V
    IRLZ24NSPBF IRLZ24NSPBF Infineon Technologies $0.00
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    		 Tube 1998 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 45W Tc N-Channel 60m Ω @ 11A, 10V 2V @ 250μA 480pF @ 25V 15nC @ 5V 18A Tc 55V 4V 10V ±16V
    IRFZ48ZSPBF IRFZ48ZSPBF Infineon Technologies $0.00
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    		 download Surface Mount Tube 2003 HEXFET® Obsolete 1 (Unlimited) 2 EAR99 10.67mm RoHS Compliant Lead Free 61A 3 AVALANCHE RATED, ULTRA-LOW RESISTANCE TO-263-3, D2Pak (2 Leads + Tab), TO-263AB No SVHC 4.576mm 9.652mm 11MOhm Surface Mount -55°C~175°C TJ 55V MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier GULL WING 260 30 R-PSSO-G2 FET General Purpose Power Not Qualified 1 DRAIN Single 91W 15 ns 4V 91W Tc 100 ns 61A SWITCHING 35 ns SILICON N-Channel 11m Ω @ 37A, 10V 4V @ 250μA 1720pF @ 25V 64nC @ 10V 69ns 39 ns 20V 55V 61A Tc 240A 120 mJ 10V ±20V
    IRFZ48NSPBF IRFZ48NSPBF Infineon Technologies $0.00
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    		 download 22 Weeks Tube 2001 HEXFET® Discontinued 1 (Unlimited) EAR99 ROHS3 Compliant TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) 3.8W Ta 130W Tc N-Channel 14m Ω @ 32A, 10V 4V @ 250μA 1970pF @ 25V 81nC @ 10V 64A Tc 55V 10V ±20V
    IRF530NSPBF IRF530NSPBF Infineon Technologies $0.00
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    		 download Tube 1997 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 70W Tc SWITCHING 0.09Ohm 100V SILICON N-Channel 90m Ω @ 9A, 10V 4V @ 250μA 920pF @ 25V 37nC @ 10V 17A 17A Tc 100V 60A 93 mJ 10V ±20V
    IRF5305SPBF IRF5305SPBF Infineon Technologies $0.00
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    		 download Tube 2000 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 Other Transistors Not Qualified 1 SINGLE WITH BUILT-IN DIODE TO-252 DRAIN 3.8W Ta 110W Tc SWITCHING 0.06Ohm 55V SILICON P-Channel 60m Ω @ 16A, 10V 4V @ 250μA 1200pF @ 25V 63nC @ 10V 31A 31A Tc 55V 110A 280 mJ 10V ±20V
    IRL540NSPBF IRL540NSPBF Infineon Technologies $0.00
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    		 download 7 Weeks Tube 1998 HEXFET® Discontinued 1 (Unlimited) 2 EAR99 ROHS3 Compliant AVALANCHE RATED, HIGH RELIABILITY TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Surface Mount -55°C~175°C TJ MOSFET (Metal Oxide) ENHANCEMENT MODE e3 Matte Tin (Sn) - with Nickel (Ni) barrier SINGLE GULL WING 260 30 YES R-PSSO-G2 FET General Purpose Power Not Qualified 1 SINGLE WITH BUILT-IN DIODE DRAIN 3.8W Ta 140W Tc SWITCHING 0.053Ohm 100V SILICON N-Channel 44m Ω @ 18A, 10V 2V @ 250μA 1800pF @ 25V 74nC @ 5V 36A 36A Tc 100V 120A 310 mJ 4V 10V ±16V