Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | Termination | ECCN Code | Length | RoHS Status | Lead Free | Contact Plating | Current Rating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | REACH SVHC | Reach Compliance Code | Height | Width | Resistance | Mounting Type | Operating Temperature | Voltage - Rated DC | Technology | Operating Mode | Current | HTS Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Time@Peak Reflow Temperature-Max (s) | Pin Count | Surface Mount | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Reference Standard | Voltage | Number of Elements | Configuration | JEDEC-95 Code | Case Connection | Halogen Free | Element Configuration | Power Dissipation | Turn On Delay Time | Threshold Voltage | Max Dual Supply Voltage | Power Dissipation-Max | Recovery Time | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | DS Breakdown Voltage-Min | Turn-Off Delay Time | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | Dual Supply Voltage | FET Feature | Nominal Vgs | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Avalanche Energy Rating (Eas) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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IRFR3806TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | HEXFET® | Active | 1 (Unlimited) | 2 | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 15.8MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | Single | 71W | 6.3 ns | 71W Tc | 43mA | SWITCHING | 49 ns | SILICON | N-Channel | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 1150pF @ 50V | 30nC @ 10V | 40ns | 47 ns | 20V | 60V | 2 V | 43A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
BSS139H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 2006 | SIPMOS® | yes | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-236-3, SC-59, SOT-23-3 | No SVHC | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | DUAL | GULL WING | 3 | 1 | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 360mW | -1.4V | 250V | 360mW Ta | 40mA | SILICON | N-Channel | 14 Ω @ 100μA, 10V | 1V @ 56μA | 76pF @ 25V | 3.5nC @ 5V | 5.4ns | 20V | 250V | Depletion Mode | -1.4 V | 100mA Ta | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
BSS131H6327XTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tape & Reel (TR) | 1997 | SIPMOS® | Active | 1 (Unlimited) | 3 | SMD/SMT | EAR99 | ROHS3 Compliant | Lead Free | Tin | No | 3 | LOGIC LEVEL COMPATIBLE | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.1mm | 3.05mm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 3 | 1 | 240V | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 360mW | 3.3 ns | 1.4V | 240V | 360mW Ta | 100mA | 150°C | 13.7 ns | SILICON | N-Channel | 14 Ω @ 100mA, 10V | 1.8V @ 56μA | 77pF @ 25V | 3.1nC @ 10V | 3.1ns | 20V | 240V | 240V | 1.4 V | 110mA Ta | 4.2 pF | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
IRFR1205TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2004 | HEXFET® | Active | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Contains Lead, Lead Free | Tin | 37A | No | 3 | AVALANCHE RATED, ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.8mm | 27mOhm | Surface Mount | -55°C~175°C TJ | 55V | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | TO-252AA | DRAIN | Single | 69W | 7.3 ns | 4V | 107W Tc | 98 ns | 37A | SWITCHING | 47 ns | SILICON | N-Channel | 27m Ω @ 26A, 10V | 4V @ 250μA | 1300pF @ 25V | 65nC @ 10V | 69ns | 60 ns | 20V | 55V | 55V | 4 V | 20A | 44A Tc | 10V | ±20V | |||||||||||||||||||||||||||
IRLML0030TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 1998 | HEXFET® | Active | 1 (Unlimited) | 3 | EAR99 | 3.0226mm | ROHS3 Compliant | Lead Free | No | 3 | HIGH RELIABILITY | TO-236-3, SC-59, SOT-23-3 | No SVHC | 1.12mm | 1.397mm | 27MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 1 | FET General Purpose Power | 1 | Single | 1.3W | 5.2 ns | 1.7V | 1.3W Ta | 17 ns | 5.3A | 150°C | SWITCHING | 7.4 ns | SILICON | N-Channel | 27m Ω @ 5.2A, 10V | 2.3V @ 25μA | 382pF @ 15V | 2.6nC @ 4.5V | 4.4ns | 4.4 ns | 20V | 30V | 1.7 V | 5.3A Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
BSP318SL6327HTSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1999 | SIPMOS® | Obsolete | 1 (Unlimited) | 4 | RoHS Compliant | No | 4 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-261-4, TO-261AA | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | GULL WING | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 1.8W | 12 ns | 1.8W Ta | 2.6A | 60V | 20 ns | SILICON | N-Channel | 90m Ω @ 2.6A, 10V | 2V @ 20μA | 380pF @ 25V | 20nC @ 10V | 15ns | 15 ns | 20V | 2.6A Ta | 60V | 60 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
IRFH5306TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | RoHS Compliant | Lead Free | Tin | No | 8 | HIGH RELIABILITY | 8-PowerVDFN | 838.2μm | 5mm | 8.1MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 9 ns | 3.6W Ta 26W Tc | 44A | SWITCHING | 9.1 ns | SILICON | N-Channel | 8.1m Ω @ 15A, 10V | 2.35V @ 25μA | 1125pF @ 15V | 12nC @ 4.5V | 26ns | 6.1 ns | 20V | 30V | 15A Ta 44A Tc | 60A | 46 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
IPD70N04S3-07 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2007 | OptiMOS™ | no | Obsolete | 1 (Unlimited) | 2 | EAR99 | 6.5mm | RoHS Compliant | Lead Free | 3 | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.3mm | 6.22mm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 8541.29.00.95 | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Halogen Free | Single | 79W | 13 ns | 40V | 79W Tc | 82A | 0.006Ohm | 17 ns | SILICON | N-Channel | 6m Ω @ 70A, 10V | 4V @ 50μA | 2700pF @ 25V | 40nC @ 10V | 8ns | 7 ns | 20V | 40V | 70A | 82A Tc | 280A | 145 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||
IPD60R600C6BTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Cut Tape (CT) | 2008 | CoolMOS™ | yes | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | not_compliant | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 4 | YES | R-PSSO-G2 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 63W Tc | SWITCHING | 0.6Ohm | 600V | SILICON | N-Channel | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 440pF @ 100V | 20.5nC @ 10V | 7.3A | 7.3A Tc | 600V | 19A | 133 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IRLR8259PBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tube | 2008 | HEXFET® | Discontinued | 1 (Unlimited) | 2 | SMD/SMT | EAR99 | 6.7056mm | ROHS3 Compliant | Lead Free | No | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.3876mm | 6.22mm | 8.7MOhm | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | R-PSSO-G2 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | TO-252AA | DRAIN | 48W | 8.4 ns | 1.9V | 48W Tc | 26 ns | 57A | SWITCHING | 9.1 ns | SILICON | N-Channel | 8.7m Ω @ 21A, 10V | 2.35V @ 25μA | 900pF @ 13V | 10nC @ 4.5V | 38ns | 8.9 ns | 20V | 25V | 25V | 1.9 V | 42A | 57A Tc | 67 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||
IRFH5255TRPBF | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2010 | HEXFET® | Obsolete | 1 (Unlimited) | 5 | EAR99 | 5.9944mm | RoHS Compliant | Lead Free | No | 8 | 8-PowerVDFN | 838.2μm | 5mm | 6MOhm | Surface Mount | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | DUAL | R-PDSO-N5 | FET General Purpose Power | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 3.6W | 7.9 ns | 3.6W Ta 26W Tc | 51A | SWITCHING | 6.5 ns | SILICON | N-Channel | 6m Ω @ 15A, 10V | 2.35V @ 25μA | 988pF @ 13V | 14.5nC @ 10V | 10.7ns | 3.8 ns | 20V | 25V | 15A Ta 51A Tc | 60A | 53 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
IPB80N04S3H4ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2008 | OptiMOS™ | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 40V | 115W Tc | 80A | 0.0048Ohm | SILICON | N-Channel | 4.5m Ω @ 80A, 10V | 4V @ 65μA | 3900pF @ 25V | 60nC @ 10V | 80A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
BSB053N03LP G | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2009 | OptiMOS™ | Obsolete | 3 (168 Hours) | 3 | EAR99 | RoHS Compliant | AVALANCHE RATED | 3-WDSON | compliant | Surface Mount | -40°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | MATTE TIN | BOTTOM | NO LEAD | 260 | 40 | 3 | YES | R-MBCC-N3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 2.3W Ta 42W Tc | SWITCHING | 0.0053Ohm | 30V | SILICON | N-Channel | 5.3m Ω @ 30A, 10V | 2.2V @ 250μA | 2700pF @ 15V | 29nC @ 10V | 17A | 17A Ta 71A Tc | 30V | 284A | 75 mJ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPA60R520C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 52 Weeks | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-220-3 Full Pack | compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 29W Tc | SWITCHING | 0.52Ohm | 600V | SILICON | N-Channel | 520m Ω @ 2.8A, 10V | 3.5V @ 230μA | 512pF @ 100V | 23.4nC @ 10V | 8.1A | 8.1A Tc | 600V | 22A | 153 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
IPD90N06S4L03ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 2009 | OptiMOS™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | ULTRA LOW RESISTANCE | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | YES | R-PSSO-G2 | AEC-Q101 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 150W Tc | 0.0035Ohm | 60V | SILICON | N-Channel | 3.5m Ω @ 90A, 10V | 2.2V @ 90μA | 13000pF @ 25V | 170nC @ 10V | 90A | 90A Tc | 60V | 360A | 331 mJ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
IPP60R600C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-220-3 | compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 63W Tc | SWITCHING | 0.6Ohm | 600V | SILICON | N-Channel | 600m Ω @ 2.4A, 10V | 3.5V @ 200μA | 440pF @ 100V | 20.5nC @ 10V | 7.3A | 7.3A Tc | 600V | 19A | 133 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
IPI70N10S3L12AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2012 | OptiMOS™ | Obsolete | 1 (Unlimited) | EAR99 | RoHS Compliant | Contains Lead | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | Halogen Free | 10 ns | 100V | 125W Tc | 70A | 28 ns | N-Channel | 12.1m Ω @ 70A, 10V | 2.4V @ 83μA | 5550pF @ 25V | 80nC @ 10V | 5ns | 20V | 70A Tc | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPI126N10N3 G | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2011 | OptiMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | TO-262-3 Long Leads, I2Pak, TO-262AA | compliant | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSIP-T3 | FET General Purpose Power | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 94W Tc | SWITCHING | 0.0126Ohm | 100V | SILICON | N-Channel | 12.6m Ω @ 46A, 10V | 3.5V @ 46μA | 2500pF @ 50V | 35nC @ 10V | 58A | 58A Tc | 100V | 232A | 70 mJ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
IPI120N06S403AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2009 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 40 ns | 60V | 167W Tc | 120A | 80 ns | SILICON | N-Channel | 3.2m Ω @ 100A, 10V | 4V @ 120μA | 13150pF @ 25V | 160nC @ 10V | 10ns | 15 ns | 20V | 120A Tc | 480A | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
IPI90N06S404AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Tube | 2009 | OptiMOS™ | Obsolete | 1 (Unlimited) | EAR99 | 10mm | RoHS Compliant | 3 | TO-262-3 Long Leads, I2Pak, TO-262AA | 9.25mm | 4.4mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | Halogen Free | Single | 30 ns | 60V | 150W Tc | 90A | 40 ns | N-Channel | 4m Ω @ 90A, 10V | 4V @ 90μA | 10400pF @ 25V | 128nC @ 10V | 20V | 90A Tc | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IPB45N06S4L08ATMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2009 | OptiMOS™ | Discontinued | 1 (Unlimited) | 2 | EAR99 | ROHS3 Compliant | Contains Lead | 3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | Halogen Free | 9 ns | 60V | 71W Tc | 45A | 0.0079Ohm | 45 ns | SILICON | N-Channel | 7.9m Ω @ 45A, 10V | 2.2V @ 35μA | 4780pF @ 25V | 64nC @ 10V | 2ns | 8 ns | 16V | 45A Tc | 180A | 97 mJ | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
IPP45N06S409AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2006 | OptiMOS™ | Discontinued | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 15 ns | 60V | 71W Tc | 45A | 0.0094Ohm | 20 ns | SILICON | N-Channel | 9.4m Ω @ 45A, 10V | 4V @ 34μA | 3785pF @ 25V | 47nC @ 10V | 40ns | 5 ns | 20V | 45A Tc | 180A | 97 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
SPD30N03S2L07GBTMA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 2003 | OptiMOS™ | Obsolete | 1 (Unlimited) | 2 | EAR99 | RoHS Compliant | No | 3 | AVALANCHE RATED | TO-252-3, DPak (2 Leads + Tab), SC-63 | Surface Mount | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | GULL WING | R-PSSO-G2 | 1 | SINGLE WITH BUILT-IN DIODE | DRAIN | 8 ns | 136W Tc | 30A | 0.0098Ohm | 62 ns | SILICON | N-Channel | 6.7m Ω @ 30A, 10V | 2V @ 85μA | 2530pF @ 25V | 68nC @ 10V | 17ns | 47 ns | 20V | 30A Tc | 30V | 120A | 250 mJ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPP120N06S402AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2009 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | 3 | TO-220-3 | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | DRAIN | 25 ns | 60V | 188W Tc | 120A | 0.0028Ohm | 50 ns | SILICON | N-Channel | 2.8m Ω @ 100A, 10V | 4V @ 140μA | 15750pF @ 25V | 195nC @ 10V | 5ns | 10 ns | 20V | 120A Tc | 480A | 560 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPI50R250CPXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | Lead Free | TO-262-3 Long Leads, I2Pak, TO-262AA | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSIP-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | Halogen Free | 114W | 35 ns | 500V | 114W Tc | 13A | SWITCHING | 0.25Ohm | 80 ns | SILICON | N-Channel | 250m Ω @ 7.8A, 10V | 3.5V @ 520μA | 1420pF @ 100V | 36nC @ 10V | 14ns | 11 ns | 20V | 13A Tc | 345 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
IPW65R280C6FKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Through Hole | Tube | 2009 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 104W | 13 ns | 650V | 104W Tc | 13.8A | SWITCHING | 0.28Ohm | 105 ns | SILICON | N-Channel | 280m Ω @ 4.4A, 10V | 3.5V @ 440μA | 950pF @ 100V | 45nC @ 10V | 11ns | 12 ns | 20V | 13.8A Tc | 39A | 290 mJ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPP100N04S4H2AKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | Tube | 2012 | OptiMOS™ | Obsolete | 1 (Unlimited) | 3 | EAR99 | 10mm | RoHS Compliant | 3 | TO-220-3 | 15.65mm | 4.4mm | Through Hole | -55°C~175°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | 75A | NOT SPECIFIED | NOT SPECIFIED | NO | 40V | 1 | TO-220AB | Halogen Free | Single | 18 ns | 40V | 115W Tc | 100A | 0.0027Ohm | 19 ns | SILICON | N-Channel | 2.7m Ω @ 100A, 10V | 4V @ 70μA | 7180pF @ 25V | 90nC @ 10V | 20V | 100A Tc | 280 mJ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
BUZ73ALHXKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | Through Hole | Tube | 2005 | SIPMOS® | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | No | 3 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | TO-220-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | SINGLE | 3 | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | 15 ns | 40W Tc | 5.5A | 0.6Ohm | 200V | 100 ns | SILICON | N-Channel | 600m Ω @ 3.5A, 5V | 2V @ 1mA | 840pF @ 25V | 60ns | 40 ns | 20V | 5.5A Tc | 200V | 22A | 120 mJ | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
IPW65R660CFDFKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 16 Weeks | Through Hole | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | EAR99 | RoHS Compliant | Lead Free | 3 | TO-247-3 | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | 62.5W | 9 ns | 650V | 62.5W Tc | 6A | SWITCHING | 0.66Ohm | 40 ns | SILICON | N-Channel | 660m Ω @ 2.1A, 10V | 4.5V @ 200μA | 615pF @ 100V | 22nC @ 10V | 8ns | 10 ns | 20V | 6A | 6A Tc | 700V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
IPA65R600C6XKSA1 | Infineon Technologies | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Tube | 2008 | CoolMOS™ | yes | Obsolete | 1 (Unlimited) | 3 | RoHS Compliant | TO-220-3 Full Pack | compliant | Through Hole | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Tin (Sn) | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 3 | NO | R-PSFM-T3 | Not Qualified | 1 | SINGLE WITH BUILT-IN DIODE | TO-220AB | ISOLATED | 28W Tc | SWITCHING | 0.6Ohm | 650V | SILICON | N-Channel | 600m Ω @ 2.1A, 10V | 3.5V @ 210μA | 440pF @ 100V | 23nC @ 10V | 7.3A Tc | 650V | 18A | 142 mJ | 10V | ±20V |
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